| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Books received
|
|
|
1969
|
12 |
6 |
p. 510-
1 p.
|
artikel
|
| 2 |
Build-up time of an acousto-electric oscillator
|
Lahiri, S.K.
|
|
1969
|
12 |
6 |
p. 497-500
4 p.
|
artikel
|
| 3 |
Bulk negative resistance device operated in a relaxation mode
|
Lanza, Conrad
|
|
1969
|
12 |
6 |
p. 463-466
4 p.
|
artikel
|
| 4 |
Current dependence of collector junction capacity of alloy junction transistor under inverse operating condition
|
Prasad, Harish Chandra
|
|
1969
|
12 |
6 |
p. 502-505
4 p.
|
artikel
|
| 5 |
Electrical suppression of avalanche currents in semiconductor junctions
|
Melchior, H.
|
|
1969
|
12 |
6 |
p. 449-456
8 p.
|
artikel
|
| 6 |
Heterojonctions Ge p-Si n obtenues par épitaxie sous vide
|
Durupt, Pierre
|
|
1969
|
12 |
6 |
p. 469-473
5 p.
|
artikel
|
| 7 |
Passivation of mesa-type silicon hyperabrupt junction diode
|
Ohta, Michihiro
|
|
1969
|
12 |
6 |
p. 507-509
3 p.
|
artikel
|
| 8 |
Possible application of Au island films as temperature sensor and compensator
|
Hsieh, E.J.
|
|
1969
|
12 |
6 |
p. 493-494
2 p.
|
artikel
|
| 9 |
Room temperature green electroluminescent diodes prepared from n-type vapour grown epitaxial gallium phosphide
|
Epstein, A.S.
|
|
1969
|
12 |
6 |
p. 485-488
4 p.
|
artikel
|
| 10 |
The density of states in degenerate n-type germanium and silicon
|
Li, Sheng-San
|
|
1969
|
12 |
6 |
p. 505-507
3 p.
|
artikel
|
| 11 |
Thermionic emission of the GaAs photocathode
|
Bell, R.L.
|
|
1969
|
12 |
6 |
p. 475-483
9 p.
|
artikel
|
| 12 |
The solubility of sodium in silicon
|
Parry, E.P.
|
|
1969
|
12 |
6 |
p. 500-502
3 p.
|
artikel
|
| 13 |
Yellow emission from GaAsP diodes
|
Epstein, A.S.
|
|
1969
|
12 |
6 |
p. 494-496
3 p.
|
artikel
|
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