| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abrupt p-n junctions at arbitrary injection levels
|
Barber, H.D.
|
|
1969
|
12 |
5 |
p. 425-431
7 p.
|
artikel
|
| 2 |
A high voltage thin-film transistor
|
O'Hanlon, J.F.
|
|
1969
|
12 |
5 |
p. 363-366
4 p.
|
artikel
|
| 3 |
Über die zeitliche stabilität von getempertem, reinem silizium
|
Viktora, B.
|
|
1969
|
12 |
5 |
p. 349-362
14 p.
|
artikel
|
| 4 |
Calculation of intrinsic transport parameters of a double-diffused transistor
|
Yang, E.S.
|
|
1969
|
12 |
5 |
p. 399-405
7 p.
|
artikel
|
| 5 |
Complementary MOS field-effect transistors on high-resistivity silicon substrates
|
Richman, Paul
|
|
1969
|
12 |
5 |
p. 377-380
4 p.
|
artikel
|
| 6 |
Electrical properties of diffused zinc on SiO2-Si MOS structures
|
Chang, Chun-Yen
|
|
1969
|
12 |
5 |
p. 411-415
5 p.
|
artikel
|
| 7 |
High-frequency impedance of silicon SCL diode
|
Dascalu, D.
|
|
1969
|
12 |
5 |
p. 444-446
3 p.
|
artikel
|
| 8 |
Homogeneous solution grown epitaxial GaAs by tin doping
|
Harris, J.S.
|
|
1969
|
12 |
5 |
p. 337-340
4 p.
|
artikel
|
| 9 |
Junction delineation and dislocation revealing in silicon by the HIO4-HF-H2O system
|
Nicolau, I.F.
|
|
1969
|
12 |
5 |
p. 446-
1 p.
|
artikel
|
| 10 |
Noise in semiconductor current limiters
|
Liu, S.T.
|
|
1969
|
12 |
5 |
p. 439-441
3 p.
|
artikel
|
| 11 |
Observation on stress effect in Schottky barrier diodes
|
Okamoto, Hiroshi
|
|
1969
|
12 |
5 |
p. 441-442
2 p.
|
artikel
|
| 12 |
Observations on a method of determining the carrier lifetime in p +-ν-n + diodes
|
Bassett, R.J.
|
|
1969
|
12 |
5 |
p. 385-391
7 p.
|
artikel
|
| 13 |
Physical limitations of MOS structures
|
Das, M.B.
|
|
1969
|
12 |
5 |
p. 305-336
32 p.
|
artikel
|
| 14 |
Properties of GaP Schottky barrier diodes at elevated temperatures
|
Nannichi, Y.
|
|
1969
|
12 |
5 |
p. 341-346
6 p.
|
artikel
|
| 15 |
Spreading resistance correction factors
|
Schumann Jr., P.A.
|
|
1969
|
12 |
5 |
p. 371-375
5 p.
|
artikel
|
| 16 |
Struktur zur messung von flächenwiderständen beim planarverfahren
|
Beneking, H.
|
|
1969
|
12 |
5 |
p. 407-408
2 p.
|
artikel
|
| 17 |
Thermal instabilities limiting power dissipation in transistors
|
Spitzer, S.M.
|
|
1969
|
12 |
5 |
p. 433-437
5 p.
|
artikel
|
| 18 |
Use of microwave techniques for measuring carrier lifetime and mobility in semiconductors
|
Brousseau, Max
|
|
1969
|
12 |
5 |
p. 417-423
7 p.
|
artikel
|
| 19 |
Zinc sulfide Schottky barrier ultra-violet detectors
|
Richardson, J.R.
|
|
1969
|
12 |
5 |
p. 393-397
5 p.
|
artikel
|
Tijdschrift beschrijving