| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Depletion layer calculations for error function diffused junctions
|
Wilson, P.R.
|
|
1969
|
12 |
4 |
p. 277-285
9 p.
|
artikel
|
| 2 |
Interface-related electrical properties of cadmium selenide films
|
Wagner, R.G.
|
|
1969
|
12 |
4 |
p. 229-238
10 p.
|
artikel
|
| 3 |
Isolation of junction devices in GaAs using proton bombardment
|
Foyt, A.G.
|
|
1969
|
12 |
4 |
p. 209-214
6 p.
|
artikel
|
| 4 |
Measuring the lifetime of minority carriers in MIS structures
|
Tománek, P.
|
|
1969
|
12 |
4 |
p. 301-303
3 p.
|
artikel
|
| 5 |
On the effective carrier lifetime in p-s-n rectifiers at high injection levels
|
Schlangenotto, H.
|
|
1969
|
12 |
4 |
p. 267-275
9 p.
|
artikel
|
| 6 |
Photocapacitive behavior of germanium-collodion-gold contacts
|
Lee, S.
|
|
1969
|
12 |
4 |
p. 299-301
3 p.
|
artikel
|
| 7 |
Photon loss in the active and passive regions of a semiconductor laser
|
Hunsperger, R.
|
|
1969
|
12 |
4 |
p. 215-224
10 p.
|
artikel
|
| 8 |
Recombinations via defects in degenerate semiconductors
|
Heasell, E.L.
|
|
1969
|
12 |
4 |
p. 225-228
4 p.
|
artikel
|
| 9 |
Recoverable neuristor propagation on superconductive tunnel junction strip lines
|
Parmentier, R.D.
|
|
1969
|
12 |
4 |
p. 287-297
11 p.
|
artikel
|
| 10 |
The electrical properties of dislocations in silicon—I
|
Glaenzer, R.H.
|
|
1969
|
12 |
4 |
p. 247-258
12 p.
|
artikel
|
| 11 |
The electrical properties of dislocations in silicon—II
|
Glaenzer, R.H.
|
|
1969
|
12 |
4 |
p. 259-266
8 p.
|
artikel
|
| 12 |
Use of Padé approximations in device modelling
|
Engl, W.L.
|
|
1969
|
12 |
4 |
p. 239-246
8 p.
|
artikel
|
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