nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Books received
|
|
|
1969 |
12 |
2 |
p. 142- 1 p. |
artikel |
2 |
Corrigendum
|
|
|
1969 |
12 |
2 |
p. 143- 1 p. |
artikel |
3 |
Durchbruchsphänomene an Schottky-dioden
|
Jäger, H. |
|
1969 |
12 |
2 |
p. 85-86 2 p. |
artikel |
4 |
Effects of ionizing radiation on MOS devices
|
Andre, B. |
|
1969 |
12 |
2 |
p. 123-131 9 p. |
artikel |
5 |
Metal-semiconductor impatt diode
|
Sze, S.M. |
|
1969 |
12 |
2 |
p. 107-109 3 p. |
artikel |
6 |
Non-ohmic microwave conductivity in semiconductor posts
|
Hess, K. |
|
1969 |
12 |
2 |
p. 79-84 6 p. |
artikel |
7 |
Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers
|
Crowell, C.R. |
|
1969 |
12 |
2 |
p. 89-105 17 p. |
artikel |
8 |
Oriented Te thin films
|
Dutton, R.W. |
|
1969 |
12 |
2 |
p. 136-137 2 p. |
artikel |
9 |
Physics of thin films, vol. 4
|
Behrndt, K.H. |
|
1969 |
12 |
2 |
p. 141- 1 p. |
artikel |
10 |
Pyroelectric detection of X-ray absorption by tourmaline
|
Bose, D.N. |
|
1969 |
12 |
2 |
p. 65-68 4 p. |
artikel |
11 |
Reactive characteristics of narrow germanium p-n junctions in the breakdown region
|
Mahadevan, Sudha |
|
1969 |
12 |
2 |
p. 119-121 3 p. |
artikel |
12 |
Self-diffusion in InAs crystals
|
Kato, Hideomi |
|
1969 |
12 |
2 |
p. 137-139 3 p. |
artikel |
13 |
Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate
|
Statz, H. |
|
1969 |
12 |
2 |
p. 111-116 6 p. |
artikel |
14 |
The orientation dependent diffusion of boron in silicon under oxidizing conditions
|
Wills, G.N. |
|
1969 |
12 |
2 |
p. 133-134 2 p. |
artikel |
15 |
The Richardson constant for thermionic emission in Schottky barrier diodes
|
Padovani, F.A. |
|
1969 |
12 |
2 |
p. 135-136 2 p. |
artikel |
16 |
Thermal instability in power transistor structures
|
Navon, D. |
|
1969 |
12 |
2 |
p. 69-78 10 p. |
artikel |