| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An electron imaging system for the fabrication of integrated circuits
|
O'Keeffe, T.W.
|
|
1969
|
12 |
11 |
p. 841-844
4 p.
|
artikel
|
| 2 |
Über das verhalten von kohlenstoff beim zonenziehen von silicium
|
Haas, E.
|
|
1969
|
12 |
11 |
p. 915-918
4 p.
|
artikel
|
| 3 |
Characterization of burst noise in silicon devices
|
Hsu, S.T.
|
|
1969
|
12 |
11 |
p. 867-878
12 p.
|
artikel
|
| 4 |
Determination of deep centers in silicon by thermally stimulated conductivity measurements
|
Schade, H.
|
|
1969
|
12 |
11 |
p. 857-860
4 p.
|
artikel
|
| 5 |
Device modeling for computer-aided design and analysis of integrated circuits
|
Lindholm, Fred A.
|
|
1969
|
12 |
11 |
p. 831-840
10 p.
|
artikel
|
| 6 |
Factors affecting the photoemission from caesium oxide covered GaAs
|
Garbe, S.
|
|
1969
|
12 |
11 |
p. 893-901
9 p.
|
artikel
|
| 7 |
Generation-recombination noise in double-injection diodes
|
Bilger, H.R.
|
|
1969
|
12 |
11 |
p. 849-856
8 p.
|
artikel
|
| 8 |
Geometrical dependences of the low-frequency generation-recombination noise in mos transistors
|
Yau, L.D.
|
|
1969
|
12 |
11 |
p. 903-905
3 p.
|
artikel
|
| 9 |
Improvement in the detection of oxygen in silicon by infra-red absorption
|
Pajot, Bernard
|
|
1969
|
12 |
11 |
p. 923-925
3 p.
|
artikel
|
| 10 |
Messung des übergangswiderstandes zwischen metall und diffusionsschicht in Si-planarelementen
|
Murrmann, H.
|
|
1969
|
12 |
11 |
p. 879-886
8 p.
|
artikel
|
| 11 |
Noise in junction- and MOS-FET's at high temperatures
|
van der Ziel, A.
|
|
1969
|
12 |
11 |
p. 861-866
6 p.
|
artikel
|
| 12 |
Non-thermal noise in MOS FET's and MOS tetrodes
|
Takagi, K.
|
|
1969
|
12 |
11 |
p. 907-913
7 p.
|
artikel
|
| 13 |
On the transport characteristics of a p-n junction with narrow diffused region
|
Gangadhar, R.B.
|
|
1969
|
12 |
11 |
p. 887-891
5 p.
|
artikel
|
| 14 |
Some comments on the paper ‘an opto-electronic cold cathode for cathode-ray tubes’
|
Chisholm, T.
|
|
1969
|
12 |
11 |
p. 925-926
2 p.
|
artikel
|
Tijdschrift beschrijving