| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A two-dimensional model for the calculation of common-emitter current gains of lateral p-n-p transistors
|
Fulkerson, D.E.
|
|
1968
|
11 |
9 |
p. 821-826
6 p.
|
artikel
|
| 2 |
Der einfluss adsorbierter metallischer verunreinigungen auf die kennwerte und die ausfallrate von siliziumgleichrichteranordnungen
|
Schmidt, H.
|
|
1968
|
11 |
9 |
p. 827-832
6 p.
|
artikel
|
| 3 |
Effet de la dependance mobilite-champ electrique sur les caracteristiques du transistor a effet de champ a jonctions
|
David, P.
|
|
1968
|
11 |
9 |
p. 893-901
9 p.
|
artikel
|
| 4 |
Electron mobility of sulfur-doped InSb films
|
Wieder, H.H.
|
|
1968
|
11 |
9 |
p. 887-891
5 p.
|
artikel
|
| 5 |
Erratum
|
|
|
1968
|
11 |
9 |
p. 907-
1 p.
|
artikel
|
| 6 |
Gallium arsenide diode lasers with oblique angles between the resonator mirrors and the p-n junction
|
Deutsch, Ch.
|
|
1968
|
11 |
9 |
p. 877-886
10 p.
|
artikel
|
| 7 |
Hall-effect isolator for v.h.f. range
|
Kobus, A.
|
|
1968
|
11 |
9 |
p. 903-905
3 p.
|
artikel
|
| 8 |
Low frequency noise in MOS transistors—II Experiments
|
Christensson, S.
|
|
1968
|
11 |
9 |
p. 813-820
8 p.
|
artikel
|
| 9 |
Low frequency noise in MOS transistors—I Theory
|
Christensson, S.
|
|
1968
|
11 |
9 |
p. 797-812
16 p.
|
artikel
|
| 10 |
Theoretical threshold voltages for MOS field effect transistors
|
Richman, P.
|
|
1968
|
11 |
9 |
p. 869-876
8 p.
|
artikel
|
| 11 |
Thermoelectricity and thermoelectric power generation
|
Rosi, F.D.
|
|
1968
|
11 |
9 |
p. 833-848
16 p.
|
artikel
|
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