| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Hall device in an integrated circuit
|
Bosch, G.
|
|
1968
|
11 |
7 |
p. 712-714
3 p.
|
artikel
|
| 2 |
Announcement
|
|
|
1968
|
11 |
7 |
p. 715-
1 p.
|
artikel
|
| 3 |
An opto-electronic cold cathode for cathode ray tubes
|
Moss, T.S.
|
|
1968
|
11 |
7 |
p. 661-666
6 p.
|
artikel
|
| 4 |
Approximations for accumulation and inversion space-charge layers in semiconductors
|
Hauser, J.R.
|
|
1968
|
11 |
7 |
p. 667-674
8 p.
|
artikel
|
| 5 |
Experimental results on the drift velocity of hot carriers in silicon and associated anisotropic effects
|
Quaranta, A.Alberigi
|
|
1968
|
11 |
7 |
p. 685-696
12 p.
|
artikel
|
| 6 |
Herstellung von p-n-übergängen durch gemeinsame plastische verformung von p- und n-dotiertem germanium
|
Schäfer, S.
|
|
1968
|
11 |
7 |
p. 675-681
7 p.
|
artikel
|
| 7 |
Junction depth measurement by spherical contouring
|
Rosenbaum, S.D.
|
|
1968
|
11 |
7 |
p. 711-712
2 p.
|
artikel
|
| 8 |
Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates
|
Sarace, J.C.
|
|
1968
|
11 |
7 |
p. 653-660
8 p.
|
artikel
|
| 9 |
Noise in p-ν-p diodes at room temperature
|
Yamamoto, S.
|
|
1968
|
11 |
7 |
p. 707-710
4 p.
|
artikel
|
| 10 |
Temperature coefficient of resistivity of silicon and germanium near room temperature
|
Bullis, W.M.
|
|
1968
|
11 |
7 |
p. 639-646
8 p.
|
artikel
|
| 11 |
The effect of the donor concentration on the optical efficiency of solution-grown GaP diodes
|
Kressel, H.
|
|
1968
|
11 |
7 |
p. 647-652
6 p.
|
artikel
|
| 12 |
The noise figure of an optical transistor
|
Slatter, J.
|
|
1968
|
11 |
7 |
p. 697-705
9 p.
|
artikel
|
| 13 |
The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport
|
Vepřek, S.
|
|
1968
|
11 |
7 |
p. 683-684
2 p.
|
artikel
|
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