| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high Q temperature insensitive inductive transistor circuit
|
Saito, Takahito
|
|
1968
|
11 |
5 |
p. 553-560
8 p.
|
artikel
|
| 2 |
Direct observation of electrical faults in planar transistors made in epitaxially grown silicon
|
Sulway, D.V.
|
|
1968
|
11 |
5 |
p. 567-568
2 p.
|
artikel
|
| 3 |
Effect of wafer thickness upon the breakdown voltage of silicon diodes
|
Kalibjian, R.
|
|
1968
|
11 |
5 |
p. 574-576
3 p.
|
artikel
|
| 4 |
Electroluminescence in polycrystalline ZnTe
|
Kennedy, D.I.
|
|
1968
|
11 |
5 |
p. 513-515
3 p.
|
artikel
|
| 5 |
Negative resistance and galvanomagnetic effects of hot electrons in inhomogeneous bulk semiconductors
|
Ferry, D.K.
|
|
1968
|
11 |
5 |
p. 561-562
2 p.
|
artikel
|
| 6 |
Noise parameters of a silicon space-charge-limited triode
|
Yamamoto, S.
|
|
1968
|
11 |
5 |
p. 572-574
3 p.
|
artikel
|
| 7 |
Non-destructive readout of ferroelectrics by field effect conductivity modulation
|
Teather, G.G.
|
|
1968
|
11 |
5 |
p. 527-533
7 p.
|
artikel
|
| 8 |
On the solution of poisson equation for an isotype heterojunction under zero-current condition
|
Kumar, R.C.
|
|
1968
|
11 |
5 |
p. 543-551
9 p.
|
artikel
|
| 9 |
Planar millimeter-wave epitaxial silicon Schottky-barrier converter diodes
|
Rusch, W.V.T.
|
|
1968
|
11 |
5 |
p. 517-522
6 p.
|
artikel
|
| 10 |
Some basic logic circuits employing Gunn-effect devices
|
Hartnagel, H.
|
|
1968
|
11 |
5 |
p. 568-IN6
nvt p.
|
artikel
|
| 11 |
Switching phenomena in titanium oxide thin films
|
Argall, F.
|
|
1968
|
11 |
5 |
p. 535-541
7 p.
|
artikel
|
Tijdschrift beschrijving