| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alloying contacts to gallium arsenide by hot hydrogen and HCl gases
|
Ing, D.W.
|
|
1968
|
11 |
4 |
p. 469-470
2 p.
|
artikel
|
| 2 |
A mesa-like edge contour for Si high voltage thyristors
|
Köhl, G.
|
|
1968
|
11 |
4 |
p. 501-502
2 p.
|
artikel
|
| 3 |
A simplified MIS method of measuring the semiconductor impurity concentration
|
Pao, H.C.
|
|
1968
|
11 |
4 |
p. 509-512
4 p.
|
artikel
|
| 4 |
Capacitance and resistance measurements of TiO2 rectifying barriers
|
English, F.L.
|
|
1968
|
11 |
4 |
p. 473-479
7 p.
|
artikel
|
| 5 |
Electroluminescence of the CdS, MOS diode
|
Yee, J.H.
|
|
1968
|
11 |
4 |
p. 419-422
4 p.
|
artikel
|
| 6 |
Evaluation of doping profiles from capacitance measurements
|
van Opdorp, C.
|
|
1968
|
11 |
4 |
p. 397-406
10 p.
|
artikel
|
| 7 |
Hall mobility of electrons in the space-charge layer of thin film CdSe transistors
|
van Heek, H.F.
|
|
1968
|
11 |
4 |
p. 459-462
4 p.
|
artikel
|
| 8 |
Helical surface-density waves and the oscillistor effect in the electron-hole-plasma of n-germanium
|
Lautz, G.
|
|
1968
|
11 |
4 |
p. 445-448
4 p.
|
artikel
|
| 9 |
H.F. thermal noise in space-charge limited solid state diodes—II
|
|
|
1968
|
11 |
4 |
p. 508-509
2 p.
|
artikel
|
| 10 |
Impact ionization breakdown of n-type epitaxial GaAs at liquid helium temperatures
|
Reynolds, R.A.
|
|
1968
|
11 |
4 |
p. 385-390
6 p.
|
artikel
|
| 11 |
Investigation of trapping centre parameters by the thermostimulated capacitor discharge
|
van der Ziel, A.
|
|
1968
|
11 |
4 |
p. 505-508
4 p.
|
artikel
|
| 12 |
Nature of an oxide layer thermally grown on silicon and determination of its thickness, both from the infra-red properties
|
Miler, M.
|
|
1968
|
11 |
4 |
p. 391-396
6 p.
|
artikel
|
| 13 |
New oscillation phenomena with piezoelectric CdS
|
Gay, R.
|
|
1968
|
11 |
4 |
p. 407-410
4 p.
|
artikel
|
| 14 |
On-characteristics of planar SCR's with regard to the use of these devices in monolithic circuits
|
Kapallo, W.
|
|
1968
|
11 |
4 |
p. 437-444
8 p.
|
artikel
|
| 15 |
Papers to be published in future issues
|
|
|
1968
|
11 |
4 |
p. 512-
1 p.
|
artikel
|
| 16 |
Properties of evaporated Hall elements of cadmium arsenide
|
Zdanowicz, L.
|
|
1968
|
11 |
4 |
p. 429-436
8 p.
|
artikel
|
| 17 |
Silicon-on-sapphire epitaxial bipolar transistors
|
Heiman, F.P.
|
|
1968
|
11 |
4 |
p. 411-412
2 p.
|
artikel
|
| 18 |
Substitutional doping during ion implantation
|
Anderson, W.W.
|
|
1968
|
11 |
4 |
p. 481-489
9 p.
|
artikel
|
| 19 |
The effect of surface treatment on gallium arsenide Schottky barrier diodes
|
Smith, B.L.
|
|
1968
|
11 |
4 |
p. 502-
1 p.
|
artikel
|
| 20 |
The preparation of InSb films
|
Sharma, S.K.
|
|
1968
|
11 |
4 |
p. 423-428
6 p.
|
artikel
|
| 21 |
Trapping and transit-time effects in high-frequency operation of space-charge-limited dielectric diodes
|
Dascǎlu, D.
|
|
1968
|
11 |
4 |
p. 491-499
9 p.
|
artikel
|
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