| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method
|
Nguyen, Manh-Cuong
|
|
2015
|
104 |
C |
p. 86-89
4 p.
|
artikel
|
| 2 |
A new compact analytical model of single electron transistor for hybrid SET–MOS circuits
|
Jain, Amit
|
|
2015
|
104 |
C |
p. 90-95
6 p.
|
artikel
|
| 3 |
Angle dependent conductivity in graphene FET transistors
|
Fuentevilla, C.H.
|
|
2015
|
104 |
C |
p. 47-52
6 p.
|
artikel
|
| 4 |
A study of InGaAs/InAlAs/InP avalanche photodiode
|
Czuba, Krzysztof
|
|
2015
|
104 |
C |
p. 109-115
7 p.
|
artikel
|
| 5 |
A superior design for high power GaN-based light-emitting diode packages
|
Liao, Kuan-Yung
|
|
2015
|
104 |
C |
p. 96-100
5 p.
|
artikel
|
| 6 |
Co-axial core–shell ZnMgO/ZnO NWs
|
Rivera, Abdiel
|
|
2015
|
104 |
C |
p. 126-130
5 p.
|
artikel
|
| 7 |
Current density–voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates
|
Tabata, Akimori
|
|
2015
|
104 |
C |
p. 33-38
6 p.
|
artikel
|
| 8 |
Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate
|
Su, Liang-Yu
|
|
2015
|
104 |
C |
p. 122-125
4 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2015
|
104 |
C |
p. IFC-
1 p.
|
artikel
|
| 10 |
Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation
|
Lee, Sangheon
|
|
2015
|
104 |
C |
p. 70-74
5 p.
|
artikel
|
| 11 |
Effect of chiral photosensitive liquid crystalline dopants on the performance of organic solar cells
|
Iwan, Agnieszka
|
|
2015
|
104 |
C |
p. 53-60
8 p.
|
artikel
|
| 12 |
Evaluating the CDM-Robustness of the input buffer with very fast transmission line pulse
|
Kao, Tzu-Cheng
|
|
2015
|
104 |
C |
p. 12-19
8 p.
|
artikel
|
| 13 |
FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application
|
Wei, Xing
|
|
2015
|
104 |
C |
p. 116-121
6 p.
|
artikel
|
| 14 |
Improved MOSFET characterization technique for single channel length, scaled transistors
|
Ferdousi, Fahmida
|
|
2015
|
104 |
C |
p. 44-46
3 p.
|
artikel
|
| 15 |
Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon
|
Mukhopadhyay, Partha
|
|
2015
|
104 |
C |
p. 101-108
8 p.
|
artikel
|
| 16 |
Modeling the impact of substrate depletion in FDSOI MOSFETs
|
Kushwaha, Pragya
|
|
2015
|
104 |
C |
p. 6-11
6 p.
|
artikel
|
| 17 |
Modelling effect of parasitics in plasmonic FETs
|
Gutin, A.
|
|
2015
|
104 |
C |
p. 75-78
4 p.
|
artikel
|
| 18 |
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design
|
Crupi, Giovanni
|
|
2015
|
104 |
C |
p. 25-32
8 p.
|
artikel
|
| 19 |
On the exciton blocking layer at the interface organic/cathode in planar multiheterojunction organic solar cells
|
Lakhdar Toumi, A.
|
|
2015
|
104 |
C |
p. 1-5
5 p.
|
artikel
|
| 20 |
Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes
|
Lee, Soo Hyun
|
|
2015
|
104 |
C |
p. 20-24
5 p.
|
artikel
|
| 21 |
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
|
Westlund, A.
|
|
2015
|
104 |
C |
p. 79-85
7 p.
|
artikel
|
| 22 |
Thermal stability of amorphous InGaZnO thin film transistors passivated by AlO x layers
|
Hu, Zhe
|
|
2015
|
104 |
C |
p. 39-43
5 p.
|
artikel
|
| 23 |
Ultrafast lateral 600V silicon SOI PiN diode with geometric traps for preventing waveform oscillation
|
Tsukuda, Masanori
|
|
2015
|
104 |
C |
p. 61-69
9 p.
|
artikel
|
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