| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO
|
Laurenčíková, Agáta
|
|
2014
|
100 |
C |
p. 7-10
4 p.
|
artikel
|
| 2 |
A novel BEM–LIGBT with high current density on thin SOI layer for 600V HVIC
|
Zhu, Jing
|
|
2014
|
100 |
C |
p. 33-38
6 p.
|
artikel
|
| 3 |
A novel method for measuring parasitic resistance in high electron mobility transistors
|
Yang, Zhen
|
|
2014
|
100 |
C |
p. 27-32
6 p.
|
artikel
|
| 4 |
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback
|
Grassi, R.
|
|
2014
|
100 |
C |
p. 54-60
7 p.
|
artikel
|
| 5 |
Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with Al2O3/TiO2 gate oxides prepared by atomic layer deposition
|
Yen, Chih-Feng
|
|
2014
|
100 |
C |
p. 1-6
6 p.
|
artikel
|
| 6 |
Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire
|
Hiblot, G.
|
|
2014
|
100 |
C |
p. 71-78
8 p.
|
artikel
|
| 7 |
Distinction between interfacial layer effect and trap passivation effect of N2 plasma treatment on LTPS-TFTs
|
Ma, William Cheng-Yu
|
|
2014
|
100 |
C |
p. 45-48
4 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
2014
|
100 |
C |
p. IFC-
1 p.
|
artikel
|
| 9 |
Electrical characteristics and optimization of extended-drain MOS transistor with dual-workfunction-gate for mixed-signal applications
|
Baek, Ki-Ju
|
|
2014
|
100 |
C |
p. 49-53
5 p.
|
artikel
|
| 10 |
Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode
|
Kopytko, M.
|
|
2014
|
100 |
C |
p. 20-26
7 p.
|
artikel
|
| 11 |
Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
|
Zhou, Xingye
|
|
2014
|
100 |
C |
p. 15-19
5 p.
|
artikel
|
| 12 |
Incremental resistance programming of programmable metallization cells for use as electronic synapses
|
Mahalanabis, D.
|
|
2014
|
100 |
C |
p. 39-44
6 p.
|
artikel
|
| 13 |
Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
|
Kim, Do-Kywn
|
|
2014
|
100 |
C |
p. 11-14
4 p.
|
artikel
|
| 14 |
The performance studies on swallow-tailed naphthalene diimide derivatives in solution processed inverted bulk heterojunction solar cells
|
Turkmen, Gulsah
|
|
2014
|
100 |
C |
p. 61-70
10 p.
|
artikel
|
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