| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Characteristics of junction field effect devices with small channel length-to-width ratios
|
Hauser, J.R.
|
|
1967
|
10 |
6 |
p. 577-587
11 p.
|
article
|
| 2 |
Current saturation and drain conductance of junction-gate field-effect transistors
|
Wu, S.Y.
|
|
1967
|
10 |
6 |
p. 593-609
17 p.
|
article
|
| 3 |
Dependence of MOS transistor threshold voltage on substrate resistivity
|
Brotherton, S.D.
|
|
1967
|
10 |
6 |
p. 611-616
6 p.
|
article
|
| 4 |
Diffusion into silicon from an arsenic-doped oxide
|
Lee, D.B.
|
|
1967
|
10 |
6 |
p. 623-624
2 p.
|
article
|
| 5 |
Gold silicon phase diagram
|
Gerlach, W.
|
|
1967
|
10 |
6 |
p. 589-592
4 p.
|
article
|
| 6 |
Improved expressions for the efficiency of an infinite stage thermoelectric heat pump and generator
|
Ybarrondo, L.J.
|
|
1967
|
10 |
6 |
p. 620-622
3 p.
|
article
|
| 7 |
Impurity interaction and damage in double diffused layers on silicon
|
Cohen, B.G.
|
|
1967
|
10 |
6 |
p. 555-557
3 p.
|
article
|
| 8 |
Junction delineation by anodic oxidation in InSb (As, P)
|
Chang, L.L.
|
|
1967
|
10 |
6 |
p. 539-544
6 p.
|
article
|
| 9 |
Multi-channel field-effect transistor theory and experiment
|
Zuleeg, R.
|
|
1967
|
10 |
6 |
p. 559-576
18 p.
|
article
|
| 10 |
Radiative decay in compound semiconductors
|
Landsberg, P.T.
|
|
1967
|
10 |
6 |
p. 513-537
25 p.
|
article
|
| 11 |
Some factors affecting the yield of GaP crystal lamps
|
Sulway, D.V.
|
|
1967
|
10 |
6 |
p. 545-553
9 p.
|
article
|
| 12 |
Three-dimensional boundary-value problems in integrated circuits
|
Agraz, J.
|
|
1967
|
10 |
6 |
p. 617-620
4 p.
|
article
|
Journal description