| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of bulk reverse current in diffused silicon power rectifiers
|
Dannhäuser, F.
|
|
1967
|
10 |
4 |
p. 361-365
5 p.
|
artikel
|
| 2 |
Cut-off frequency of a drift transistor
|
Daw, A.N.
|
|
1967
|
10 |
4 |
p. 359-360
2 p.
|
artikel
|
| 3 |
Formation of the complement of an agglomerated film
|
Spriggs, R.Spencer
|
|
1967
|
10 |
4 |
p. 353-356
4 p.
|
artikel
|
| 4 |
Influence of surface conditions on silicon planar transistor current gain
|
Reddi, V.G.K.
|
|
1967
|
10 |
4 |
p. 305-334
30 p.
|
artikel
|
| 5 |
Observations of space-charge-limited currents in p-type silicon
|
Okazaki, S.
|
|
1967
|
10 |
4 |
p. 273-279
7 p.
|
artikel
|
| 6 |
Parameter optimization in frequency conversion of optical signal demodulation in pin silicon photodiodes
|
Cho, K.S.
|
|
1967
|
10 |
4 |
p. 365-367
3 p.
|
artikel
|
| 7 |
Structure, conductivity and hall effect of electron bombardment evaporated silicon films on sapphire
|
Salama, C.A.T.
|
|
1967
|
10 |
4 |
p. 339-342
4 p.
|
artikel
|
| 8 |
The capacitance of p-n junctions
|
Chang, Y.F.
|
|
1967
|
10 |
4 |
p. 281-287
7 p.
|
artikel
|
| 9 |
The effect of arsenic pressure on crystal efficiency for injection luminescence in gallium arsenide
|
Brice, J.C.
|
|
1967
|
10 |
4 |
p. 335-337
3 p.
|
artikel
|
| 10 |
Transistormesstechnik
|
Rindner, W.
|
|
1967
|
10 |
4 |
p. 368-
1 p.
|
artikel
|
| 11 |
Transition from pentode- to triode-like characteristics in field effect transistors
|
Neumark, G.F.
|
|
1967
|
10 |
4 |
p. 299-304
6 p.
|
artikel
|
| 12 |
Travelling wave infra-red and sub-mm wave modulation using free carrier absorption in reverse-biased p-n junction diodes
|
Deb, S.
|
|
1967
|
10 |
4 |
p. 289-298
10 p.
|
artikel
|
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