| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alternative relationship for converting incremental sheet resistivity measurements into profiles of impurity concentration
|
Evans, R.A.
|
|
1967
|
10 |
2 |
p. 155-157
3 p.
|
artikel
|
| 2 |
Authors' reply to Thompson's ‘comment on “above cut-off frequency circuit principles for microwave tunnel diode oscillators”’
|
Ishii, T.Koryu
|
|
1967
|
10 |
2 |
p. 157-158
2 p.
|
artikel
|
| 3 |
Construction and performance of epitaxial transferred electron oscillators
|
Bott, I.B.
|
|
1967
|
10 |
2 |
p. 137-144
8 p.
|
artikel
|
| 4 |
Epitaxial hemispherical electroluminescent diode
|
Henkel, H.J.
|
|
1967
|
10 |
2 |
p. 158-160
3 p.
|
artikel
|
| 5 |
Injected carrier flow in a semi-insulator containing a density gradient of a deep impurity
|
Schibli, E.
|
|
1967
|
10 |
2 |
p. 97-107
11 p.
|
artikel
|
| 6 |
Interaction of two avalanching layers in GaAs
|
Weiser, K.
|
|
1967
|
10 |
2 |
p. 109-110
2 p.
|
artikel
|
| 7 |
Noise and oscillations in gold-doped germanium photodiodes
|
Bolwijn, P.T.
|
|
1967
|
10 |
2 |
p. 81-84
4 p.
|
artikel
|
| 8 |
Noise in space-charge-limited solid-state devices
|
Hsu, S.T.
|
|
1967
|
10 |
2 |
p. 129-135
7 p.
|
artikel
|
| 9 |
Recombination in silicon p−π−n diodes
|
Wilson, P.G.
|
|
1967
|
10 |
2 |
p. 145-154
10 p.
|
artikel
|
| 10 |
Room temperature electroluminescence in semi-insulating zinc telluride
|
Kennedy, D.I.
|
|
1967
|
10 |
2 |
p. 125-127
3 p.
|
artikel
|
| 11 |
SiGaP heterojunctions
|
Zeidenbergs, G.
|
|
1967
|
10 |
2 |
p. 113-123
11 p.
|
artikel
|
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