| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anti-Stokes' light converter based on graded-band-gap semiconductors
|
Van Ruyven, L.J.
|
|
1967
|
10 |
12 |
p. 1159-1163
5 p.
|
artikel
|
| 2 |
A silicon flexode an adaptive p−n junction device
|
Stander, R.
|
|
1967
|
10 |
12 |
p. 1125-1132
8 p.
|
artikel
|
| 3 |
Comparison of calculated noise figures from the parameters of a JFET with measured total noise figures
|
Leupp, A.
|
|
1967
|
10 |
12 |
p. 1221-1222
2 p.
|
artikel
|
| 4 |
Effects of traps on thin film transistors
|
Ishii, H.
|
|
1967
|
10 |
12 |
p. 1201-1206
6 p.
|
artikel
|
| 5 |
Influence of the doping concentration on switching processes in psn rectifiers—I
|
Benda, H.
|
|
1967
|
10 |
12 |
p. 1133-1147
15 p.
|
artikel
|
| 6 |
Influence of the doping concentration on switching processes in psn rectifiers—II
|
Porst, A.
|
|
1967
|
10 |
12 |
p. 1149-1157
9 p.
|
artikel
|
| 7 |
Miniature tunnel diode transducers
|
Rindner, W.
|
|
1967
|
10 |
12 |
p. 1227-1228
2 p.
|
artikel
|
| 8 |
Occurrence of non-ohmic contacts to Gunn diodes by liquid epitaxy
|
Nannichi, Y.
|
|
1967
|
10 |
12 |
p. 1223-1224
2 p.
|
artikel
|
| 9 |
Ohmic contacts for GaAs devices
|
Cox, R.H.
|
|
1967
|
10 |
12 |
p. 1213-1214
2 p.
|
artikel
|
| 10 |
Piezowiderstandseffekt in BaTiO3-Halbleitern
|
Guntersdorfer, M.
|
|
1967
|
10 |
12 |
p. 1117-1118
2 p.
|
artikel
|
| 11 |
Preparation of GaAs surfaces for epitaxial deposition
|
Stewart, C.E.E.
|
|
1967
|
10 |
12 |
p. 1199-1200
2 p.
|
artikel
|
| 12 |
Spherical drilling a new method for the measurement of junction depths in semiconductor devices
|
Lagnado, I.
|
|
1967
|
10 |
12 |
p. 1219-1220
2 p.
|
artikel
|
| 13 |
Temperature autostabilization in SbSI
|
Mali, M.
|
|
1967
|
10 |
12 |
p. 1225-1226
2 p.
|
artikel
|
| 14 |
Tunneling in MIS structures—I
|
Shewchun, J.
|
|
1967
|
10 |
12 |
p. 1165-1186
22 p.
|
artikel
|
| 15 |
Tunneling in MIS structures—II
|
Waxman, A.
|
|
1967
|
10 |
12 |
p. 1187-1198
12 p.
|
artikel
|
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