| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Depletion layer capacitance of cyclindrical and spherical p-n junctions
|
Lee, T.P.
|
|
1967
|
10 |
11 |
p. 1105-1108
4 p.
|
artikel
|
| 2 |
Effective mass and intrinsic concentration in silicon
|
Barber, H.D.
|
|
1967
|
10 |
11 |
p. 1039-1051
13 p.
|
artikel
|
| 3 |
Errata
|
|
|
1967
|
10 |
11 |
p. 1115-1116
2 p.
|
artikel
|
| 4 |
Influence of the skin-effect on hall voltage in semiconductors
|
Sikorski, S.
|
|
1967
|
10 |
11 |
p. 1063-1068
6 p.
|
artikel
|
| 5 |
Mikrowellenimpedanzen von kommerziellen photohalbleitern—II
|
Wohlleben, R.
|
|
1967
|
10 |
11 |
p. 1077-1084
8 p.
|
artikel
|
| 6 |
On the variation of gain in lateral transistors with bias current
|
Rey, G.
|
|
1967
|
10 |
11 |
p. 1112-1114
3 p.
|
artikel
|
| 7 |
Redistribution of impurities in a semiconductor for any rate of out-diffusion
|
Dolega, U.
|
|
1967
|
10 |
11 |
p. 1103-1104
2 p.
|
artikel
|
| 8 |
Silicon diode breakdown in the transition range between avalanche effect and field emission
|
Weinerth, H.
|
|
1967
|
10 |
11 |
p. 1053-1062
10 p.
|
artikel
|
| 9 |
Single crystal InSb thin films by electron beam re-crystallization
|
Teede, N.F.
|
|
1967
|
10 |
11 |
p. 1069-1076
8 p.
|
artikel
|
| 10 |
The curvature coefficient of germanium tunnel and backward diodes
|
Karlovský, J.
|
|
1967
|
10 |
11 |
p. 1109-1111
3 p.
|
artikel
|
| 11 |
Vacuum deposition of silicon on corundum
|
Reynolds, F.H.
|
|
1967
|
10 |
11 |
p. 1093-1102
10 p.
|
artikel
|
| 12 |
Zur durchbruchspannung diffundierter pn-übergänge in silizium
|
Mönch, W.
|
|
1967
|
10 |
11 |
p. 1085-1092
8 p.
|
artikel
|
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