| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aging effects in GaAs electroluminescent diodes
|
Lanza, C.
|
|
1967
|
10 |
1 |
p. 21-31
11 p.
|
artikel
|
| 2 |
Calculation of avalanche breakdown voltages of silicon p-n junctions
|
Fulop, W.
|
|
1967
|
10 |
1 |
p. 39-43
5 p.
|
artikel
|
| 3 |
Contact barriers on cleaved germanium surfaces
|
Noble Jr., W.P.
|
|
1967
|
10 |
1 |
p. 45-48
4 p.
|
artikel
|
| 4 |
Dépôts de germanium par épitaxie à partir de solutions dans l'étain et les mélanges plomb-étain
|
Laugier, André
|
|
1967
|
10 |
1 |
p. 77-78
2 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
1967
|
10 |
1 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Electrical and galvanomagnetic properties of single crystal InSb dendrites
|
Clawson, A.R.
|
|
1967
|
10 |
1 |
p. 57-58
2 p.
|
artikel
|
| 7 |
Epitaxial indium arsenide lasers
|
Brown, M.A.C.S.
|
|
1967
|
10 |
1 |
p. 76-77
2 p.
|
artikel
|
| 8 |
Equivalent circuit of a metal-insulator-semiconductor structure
|
Forlani, F.
|
|
1967
|
10 |
1 |
p. 9-20
12 p.
|
artikel
|
| 9 |
High-frequency measurements of thin-film transistors
|
De Graaff, H.C.
|
|
1967
|
10 |
1 |
p. 51-52
2 p.
|
artikel
|
| 10 |
Impurity distribution in epitaxial films after oxidation
|
Lorenz, Gert
|
|
1967
|
10 |
1 |
p. 73-75
3 p.
|
artikel
|
| 11 |
Notice
|
|
|
1967
|
10 |
1 |
p. 80-
1 p.
|
artikel
|
| 12 |
Orientation dependence of surface charge on anodized InSb
|
Chang, L.L.
|
|
1967
|
10 |
1 |
p. 69-70
2 p.
|
artikel
|
| 13 |
Population inversion in heterojunction structures
|
Berry, W.B.
|
|
1967
|
10 |
1 |
p. 79-80
2 p.
|
artikel
|
| 14 |
Solid state diffusion of antimony in germanium, from the vapour phase, in a vacuum furnace
|
Wills, G.N.
|
|
1967
|
10 |
1 |
p. 1-8
8 p.
|
artikel
|
| 15 |
Storage time of a drift transistor in the saturation region
|
Jungwirthová, Helena
|
|
1967
|
10 |
1 |
p. 71-72
2 p.
|
artikel
|
| 16 |
X-ray measurement of elastic strain and lattice constant of diffused silicon
|
Cohen, B.G.
|
|
1967
|
10 |
1 |
p. 33-37
5 p.
|
artikel
|
Tijdschrift beschrijving