nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A continuous-reading four-point resistivity probe
|
Brice, J.C. |
|
1960 |
1 |
3 |
p. 245- 1 p. |
artikel |
2 |
Calculation of concentration profiles and surface concentration from sheet-conductance measurements of diffused layers
|
Lamorte, M.F. |
|
1960 |
1 |
3 |
p. 164-171 8 p. |
artikel |
3 |
Creep and forming in selenium rectifiers
|
English, A.C. |
|
1960 |
1 |
3 |
p. 245-249 5 p. |
artikel |
4 |
Cross-sectional resistivity variations in germanium single crystals
|
Dikhoff, J.A.M. |
|
1960 |
1 |
3 |
p. 202-206 5 p. |
artikel |
5 |
Der halleffekt im inhomogenen magnetfeld
|
Brunner, Julius |
|
1960 |
1 |
3 |
p. 172-175 4 p. |
artikel |
6 |
Electrical conductivity of high vanadium phosphate glass
|
Munakata, Motosuke |
|
1960 |
1 |
3 |
p. 159-163 5 p. |
artikel |
7 |
Electrical noise. Fundamentals and physical mechanism
|
Pincherle, L. |
|
1960 |
1 |
3 |
p. 250-251 2 p. |
artikel |
8 |
Erratum
|
|
|
1960 |
1 |
3 |
p. 252- 1 p. |
artikel |
9 |
Germanium p-n-junction-tunnel-junction combination devices
|
Lesk, I.A. |
|
1960 |
1 |
3 |
p. 183-186 4 p. |
artikel |
10 |
Principles of semiconductor device operation
|
Gibson, Alan F. |
|
1960 |
1 |
3 |
p. 250- 1 p. |
artikel |
11 |
Semiconductor type and local doping determined through the use of infrared radiation
|
Harrick, N.J. |
|
1960 |
1 |
3 |
p. 234-244 11 p. |
artikel |
12 |
The operation of junction transistors at high currents and in saturation
|
Mead, C.A. |
|
1960 |
1 |
3 |
p. 211-224 14 p. |
artikel |
13 |
The regrown-diffused transistor
|
Goodman, C.H.L. |
|
1960 |
1 |
3 |
p. 188-192 5 p. |
artikel |
14 |
The scansor, a new multi-aperture rectangular-loop ferrite device
|
Duinker, S. |
|
1960 |
1 |
3 |
p. 176-178 3 p. |
artikel |
15 |
Variation with temperature of the distribution coefficient of indium in germanium
|
Lee, M.A. |
|
1960 |
1 |
3 |
p. 194-201 8 p. |
artikel |
16 |
Zur messung von magnetischen feldern mit hallgeneratoren
|
Weiss, H. |
|
1960 |
1 |
3 |
p. 225-233 9 p. |
artikel |