| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
|
Chen, Bae-Horng
|
|
2006
|
|
7-8 |
p. 1341-1348
8 p.
|
artikel
|
| 2 |
AFM fabrication and characterization of InAs/AlGaSb nanostructures
|
Sasa, S
|
|
1998
|
|
7-8 |
p. 1069-1073
5 p.
|
artikel
|
| 3 |
A functional cell for quantum-dot cellular automata
|
Snider, G.L.
|
|
1998
|
|
7-8 |
p. 1355-1359
5 p.
|
artikel
|
| 4 |
Aharonov–Bohm effect in the coulomb-blockade regime
|
Akera, Hiroshi
|
|
1998
|
|
7-8 |
p. 1379-1383
5 p.
|
artikel
|
| 5 |
Aharonov–Bohm type oscillation in antidot lattices
|
Uryu, Seiji
|
|
1998
|
|
7-8 |
p. 1141-1145
5 p.
|
artikel
|
| 6 |
Analytical modeling of CMOS circuit delay distribution due to concurrent variations in multiple processes
|
Harish, B.P.
|
|
2006
|
|
7-8 |
p. 1252-1260
9 p.
|
artikel
|
| 7 |
An analysis and numerical solution for the electrical characteristics of field effect devices
|
Catalano, Genard T.
|
|
1975
|
|
7-8 |
p. 583-586
4 p.
|
artikel
|
| 8 |
A new analytic approximation to general diode equation
|
He, Jin
|
|
2006
|
|
7-8 |
p. 1371-1374
4 p.
|
artikel
|
| 9 |
A new analytic method to design multiple floating field limiting rings of power devices
|
He, Jin
|
|
2006
|
|
7-8 |
p. 1375-1381
7 p.
|
artikel
|
| 10 |
An explicit analytical charge-based model of undoped independent double gate MOSFET
|
Reyboz, Marina
|
|
2006
|
|
7-8 |
p. 1276-1282
7 p.
|
artikel
|
| 11 |
An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects
|
Basu, Dipanjan
|
|
2006
|
|
7-8 |
p. 1299-1309
11 p.
|
artikel
|
| 12 |
An improved junction capacitance model for junction field-effect transistors
|
Ding, Hao
|
|
2006
|
|
7-8 |
p. 1395-1399
5 p.
|
artikel
|
| 13 |
An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers
|
Chen, Tianbing
|
|
2006
|
|
7-8 |
p. 1194-1200
7 p.
|
artikel
|
| 14 |
Anisotropic optical properties of arbitrarily oriented quantum wires with arbitrary cross-sections
|
Ogawa, M.
|
|
1998
|
|
7-8 |
p. 1205-1209
5 p.
|
artikel
|
| 15 |
Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dots
|
Motohisa, J
|
|
1998
|
|
7-8 |
p. 1335-1339
5 p.
|
artikel
|
| 16 |
A novel high performance insulated gate bipolar transistor
|
Zhang, Fei
|
|
2006
|
|
7-8 |
p. 1201-1205
5 p.
|
artikel
|
| 17 |
A novel wrap-gate-controlled single electron transistor formed on an InGaAs ridge quantum wire grown by selective MBE
|
Okada, Hiroshi
|
|
1998
|
|
7-8 |
p. 1419-1423
5 p.
|
artikel
|
| 18 |
Application of PVD silver for integrated microwave passives in silicon technology
|
Levenets, V.V.
|
|
2006
|
|
7-8 |
p. 1389-1394
6 p.
|
artikel
|
| 19 |
A quantum Monte Carlo study on excitonic molecules in quantum wells
|
Tsuchiya, Takuma
|
|
1998
|
|
7-8 |
p. 1523-1526
4 p.
|
artikel
|
| 20 |
A study of the surface photovoltage of silicon
|
Ewing, Joan R.
|
|
1975
|
|
7-8 |
p. 587-591
5 p.
|
artikel
|
| 21 |
A study on the synthesis from Li2CO3, NiO and Co3O4 and the electrochemical properties of cathode materials LiNi1−y Co y O2 for lithium secondary battery
|
Park, Hye-Ryoung
|
|
2006
|
|
7-8 |
p. 1291-1298
8 p.
|
artikel
|
| 22 |
Ballistic transport and gate control mechanism in deeply etched electron-waveguide based devices
|
Hieke, Katharina
|
|
1998
|
|
7-8 |
p. 1115-1119
5 p.
|
artikel
|
| 23 |
Band-gap energy anomaly observed in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy
|
Jang, Kee-Youn
|
|
1998
|
|
7-8 |
p. 1565-1568
4 p.
|
artikel
|
| 24 |
Band gap widening and narrowing in moderately and heavily doped n-ZnO films
|
Jain, Anubha
|
|
2006
|
|
7-8 |
p. 1420-1424
5 p.
|
artikel
|
| 25 |
Barrier thickness dependence of optical properties in GaAs coupled quantum wires
|
Komori, Kazuhiro
|
|
1998
|
|
7-8 |
p. 1211-1216
6 p.
|
artikel
|
| 26 |
ν=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well
|
Ohno, Y
|
|
1998
|
|
7-8 |
p. 1183-1185
3 p.
|
artikel
|
| 27 |
Breakdown of quantum hall effect in two dimensional electron system with antidot arrays
|
Sanuki, T
|
|
1998
|
|
7-8 |
p. 1165-1167
3 p.
|
artikel
|
| 28 |
Breakdown of single mode approximation in quantum hall cyclotron resonance
|
Asano, Kenichi
|
|
1998
|
|
7-8 |
p. 1175-1177
3 p.
|
artikel
|
| 29 |
Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots
|
Martin, P.M.
|
|
1998
|
|
7-8 |
p. 1293-1295
3 p.
|
artikel
|
| 30 |
Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/Al device
|
Aziz, M.S.
|
|
2006
|
|
7-8 |
p. 1238-1243
6 p.
|
artikel
|
| 31 |
C ∞-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs
|
Houk, Yuri
|
|
2006
|
|
7-8 |
p. 1261-1268
8 p.
|
artikel
|
| 32 |
Cell design and dynamics of quantum cellular automata
|
Adachi, Susumu
|
|
1998
|
|
7-8 |
p. 1361-1366
6 p.
|
artikel
|
| 33 |
Charge solitons in closed two-dimensional tunnel junction arrays
|
Shin, Mincheol
|
|
1998
|
|
7-8 |
p. 1385-1389
5 p.
|
artikel
|
| 34 |
Charge transport mechanism of Al/Bi2Te3/Al thin film devices
|
Dheepa, J.
|
|
2006
|
|
7-8 |
p. 1315-1319
5 p.
|
artikel
|
| 35 |
Colloidal quantum dot active layers for light emitting diodes
|
Pagan, Jennifer G.
|
|
2006
|
|
7-8 |
p. 1461-1465
5 p.
|
artikel
|
| 36 |
Commensurability peak in square and triangular antidot arrays
|
Ishizaka, Satoshi
|
|
1998
|
|
7-8 |
p. 1147-1150
4 p.
|
artikel
|
| 37 |
Control of magnetic field modulationon two-dimensional electron gas at theGaAs/AlGaAs heterointerface by parallel magnetic field
|
Kato, Mayumi
|
|
1998
|
|
7-8 |
p. 1121-1124
4 p.
|
artikel
|
| 38 |
Coulomb blockade in nano-junction array fabricated by nonlithographic method
|
Haruyama, J.
|
|
1998
|
|
7-8 |
p. 1257-1266
10 p.
|
artikel
|
| 39 |
Coulomb interactions in small InAs quantum dots
|
Lelong, Ph.
|
|
1998
|
|
7-8 |
p. 1251-1256
6 p.
|
artikel
|
| 40 |
Delocalization and mobility of electrons at the resonance of ground states in a coupled double quantum well structure
|
Yamaguchi, M.
|
|
1998
|
|
7-8 |
p. 1553-1556
4 p.
|
artikel
|
| 41 |
Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions
|
Ul Hoque, Md Mazhar
|
|
2006
|
|
7-8 |
p. 1430-1439
10 p.
|
artikel
|
| 42 |
Dephasing processes in transport through two-level quantum dot
|
Funabashi, Y.
|
|
1998
|
|
7-8 |
p. 1367-1371
5 p.
|
artikel
|
| 43 |
Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes
|
Contopanagos, H.
|
|
2006
|
|
7-8 |
p. 1283-1290
8 p.
|
artikel
|
| 44 |
Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOI CMOS technology
|
Bindu, B.
|
|
2006
|
|
7-8 |
p. 1359-1367
9 p.
|
artikel
|
| 45 |
Detection of fractional edge channel by quantum point contacts
|
Ando, Masato
|
|
1998
|
|
7-8 |
p. 1179-1182
4 p.
|
artikel
|
| 46 |
Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique
|
Saha, A.R.
|
|
2006
|
|
7-8 |
p. 1269-1275
7 p.
|
artikel
|
| 47 |
Device-partition method using equivalent-circuit model in three-dimensional device simulation
|
Chang, Chia-Cherng
|
|
2006
|
|
7-8 |
p. 1206-1211
6 p.
|
artikel
|
| 48 |
Direct formation of InGaAs coupled quantum wire–dot structures by selective molecular beam epitaxy on InP patterned substrates
|
Hanada, Yuuki
|
|
1998
|
|
7-8 |
p. 1413-1417
5 p.
|
artikel
|
| 49 |
Direct imaging of nano pn junctions and their bulk electronic properties with the use of scanning tunneling microscopy
|
Fukutome, Hidenobu
|
|
1998
|
|
7-8 |
p. 1075-1078
4 p.
|
artikel
|
| 50 |
Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
|
Zhu, Shiyang
|
|
2006
|
|
7-8 |
p. 1337-1340
4 p.
|
artikel
|
| 51 |
Edge and vertical cavity surface emitting InAs quantum dot lasers
|
Bimberg, D
|
|
1998
|
|
7-8 |
p. 1433-1437
5 p.
|
artikel
|
| 52 |
Edge quantum wire structures with novel doping profiles and their electronic states
|
Yamauchi, M
|
|
1998
|
|
7-8 |
p. 1223-1226
4 p.
|
artikel
|
| 53 |
Edge termination strategies for a 4kV 4H–SiC thyristor
|
Brosselard, P.
|
|
2006
|
|
7-8 |
p. 1183-1188
6 p.
|
artikel
|
| 54 |
Editorial announcement
|
|
|
1975
|
|
7-8 |
p. i-
1 p.
|
artikel
|
| 55 |
Effect of fabrication process on the charge trapping behavior of SiON thin films
|
Wang, Szu-Yu
|
|
2006
|
|
7-8 |
p. 1171-1174
4 p.
|
artikel
|
| 56 |
Effect of shunt resistor on superconductor–insulator transition in superconducting single small Josephson junction
|
Yagi, R
|
|
1998
|
|
7-8 |
p. 1477-1480
4 p.
|
artikel
|
| 57 |
Effects of thermal excitation and quantum-mechanical transmission on photothreshold determination of Schottky barrier height
|
Anderson, C.Lawrence
|
|
1975
|
|
7-8 |
p. 705-713
9 p.
|
artikel
|
| 58 |
Elastic and optical properties of BeS, BeSe and BeTe under pressure
|
Khenata, R.
|
|
2006
|
|
7-8 |
p. 1382-1388
7 p.
|
artikel
|
| 59 |
Electrical characteristics of boron diffused polycrystalline silicon layers
|
Horiuchi, S.
|
|
1975
|
|
7-8 |
p. 659-665
7 p.
|
artikel
|
| 60 |
Electron coupling effects on negatively charged excitons in GaAs double quantum wells
|
Shields, A.J
|
|
1998
|
|
7-8 |
p. 1569-1574
6 p.
|
artikel
|
| 61 |
Electronic properties of Ge nanocrystals for non volatile memory applications
|
Kanoun, M.
|
|
2006
|
|
7-8 |
p. 1310-1314
5 p.
|
artikel
|
| 62 |
Electron states, magneto-transport and carrier dynamics in modulation-dopedV-groove quantum wires
|
Maciel, A.C
|
|
1998
|
|
7-8 |
p. 1245-1249
5 p.
|
artikel
|
| 63 |
Electron transport in MIS-like GaAs/Al x Ga1−x As heterostructures with nanostructUred gates
|
Herfort, J.
|
|
1998
|
|
7-8 |
p. 1135-1139
5 p.
|
artikel
|
| 64 |
Electro–optic properties of InGaAs/GaAs quantum wires with V-shaped profile
|
Rinaldi, R
|
|
1998
|
|
7-8 |
p. 1239-1243
5 p.
|
artikel
|
| 65 |
Energy band alignment and interface states in AlGaN/4H–SiC vertical heterojunction diodes
|
Johnson, Brian J.
|
|
2006
|
|
7-8 |
p. 1413-1419
7 p.
|
artikel
|
| 66 |
Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy
|
Watanabe, Masahiro
|
|
1998
|
|
7-8 |
p. 1627-1630
4 p.
|
artikel
|
| 67 |
Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems
|
Kishimoto, S.
|
|
1998
|
|
7-8 |
p. 1187-1190
4 p.
|
artikel
|
| 68 |
Excitons, spin-waves and Skyrmions in the optical spectra of a two dimensional electron gas
|
Osborne, J.L
|
|
1998
|
|
7-8 |
p. 1169-1174
6 p.
|
artikel
|
| 69 |
Experiments on Aharonov–Bohm effect under the influence of uniform spin orbit interaction: Possible observation of Berry's phase in electronic transport
|
Morpurgo, A.F
|
|
1998
|
|
7-8 |
p. 1099-1102
4 p.
|
artikel
|
| 70 |
Extremely uniform In0.08Ga0.92As/GaAs superlattice grown on a (411)A GaAs substrate by molecular beam epitaxy
|
Kitada, Takahiro
|
|
1998
|
|
7-8 |
p. 1575-1579
5 p.
|
artikel
|
| 71 |
Fabrication and analysis of high-efficiency String Ribbon Si solar cells
|
Nakayashiki, Kenta
|
|
2006
|
|
7-8 |
p. 1406-1412
7 p.
|
artikel
|
| 72 |
Fabrication of GaAs–Ge–GaAs lateral narrow junctions and low-temperature hole transport
|
Inada, Mitsuru
|
|
1998
|
|
7-8 |
p. 1539-1542
4 p.
|
artikel
|
| 73 |
Fabrication of gate-all-around MOSFET by silicon anisotropic etching technique
|
Mukaiyama, Toshikazu
|
|
1998
|
|
7-8 |
p. 1623-1626
4 p.
|
artikel
|
| 74 |
Far-infrared cyclotron resonance study of the effect of strain and localisation in Si/SiGe two dimensional electron gases
|
Griffin, N.
|
|
1998
|
|
7-8 |
p. 1159-1163
5 p.
|
artikel
|
| 75 |
Far-infrared emission spectra from hot two-dimensional plasma in heterojunctions
|
Katayama, Shin'ichi
|
|
1998
|
|
7-8 |
p. 1561-1564
4 p.
|
artikel
|
| 76 |
Far-infrared photoresponse of the AlGaAs/GaAs low-dimensional electron systems constricted by split-gates
|
Yamanaka, K.
|
|
1998
|
|
7-8 |
p. 1151-1153
3 p.
|
artikel
|
| 77 |
Ferromagnetic single electron transistor
|
Ono, Keiji
|
|
1998
|
|
7-8 |
p. 1407-1411
5 p.
|
artikel
|
| 78 |
Formation and optical properties of carbon-induced Ge dots
|
Eberl, K
|
|
1998
|
|
7-8 |
p. 1593-1597
5 p.
|
artikel
|
| 79 |
Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy
|
Shim, Byoung-Rho
|
|
1998
|
|
7-8 |
p. 1609-1612
4 p.
|
artikel
|
| 80 |
Frequency dependence of photo-EMF of strongly inverted Ge and Si MIS structures—II experiments
|
Nakhmanson, R.S.
|
|
1975
|
|
7-8 |
p. 627-634
8 p.
|
artikel
|
| 81 |
Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures—I. Theory
|
Nakhmanson, R.S.
|
|
1975
|
|
7-8 |
p. 617-626
10 p.
|
artikel
|
| 82 |
Full-swing pentacene organic inverter with enhancement-mode driver and depletion-mode load
|
Lee, Cheon An
|
|
2006
|
|
7-8 |
p. 1216-1218
3 p.
|
artikel
|
| 83 |
Geometry-dependent transition between integer quantum-Hall states
|
Machida, T.
|
|
1998
|
|
7-8 |
p. 1155-1158
4 p.
|
artikel
|
| 84 |
Giant Andreev backscattering and reentrant resistance in a 2-dimensional electron gas coupled to superconductors
|
den Hartog, S.G.
|
|
1998
|
|
7-8 |
p. 1453-1457
5 p.
|
artikel
|
| 85 |
Giant magneto-optical effects in diluted magnetic semiconductor nanostructures
|
Oka, Yasuo
|
|
1998
|
|
7-8 |
p. 1267-1271
5 p.
|
artikel
|
| 86 |
Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering
|
Chen, Lung-Chien
|
|
2006
|
|
7-8 |
p. 1355-1358
4 p.
|
artikel
|
| 87 |
h/2e Oscillations and negative magneto-resistance in ballistic chaotic Aharonov–Bohm billiards
|
Kawabata, Shiro
|
|
1998
|
|
7-8 |
p. 1131-1134
4 p.
|
artikel
|
| 88 |
High frequency hot electron conductivity and admittance in Si and Ge
|
Hess, Karl
|
|
1975
|
|
7-8 |
p. 667-669
3 p.
|
artikel
|
| 89 |
High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime
|
Ivanov, Pavel A.
|
|
2006
|
|
7-8 |
p. 1368-1370
3 p.
|
artikel
|
| 90 |
Hopping transport in multiple-dot silicon single electron MOSFET
|
Ishikuro, Hiroki
|
|
1998
|
|
7-8 |
p. 1425-1428
4 p.
|
artikel
|
| 91 |
IFC - Editorial Board
|
|
|
2006
|
|
7-8 |
p. CO2-
1 p.
|
artikel
|
| 92 |
Impact of device scaling on the 1/f noise performance of deep submicrometer thin gate oxide CMOS devices
|
Chew, Kok Wai
|
|
2006
|
|
7-8 |
p. 1219-1226
8 p.
|
artikel
|
| 93 |
Incoherent Bloch oscillation and delocalization of Stark-ladders due to impurity scattering
|
Morifuji, Masato
|
|
1998
|
|
7-8 |
p. 1505-1508
4 p.
|
artikel
|
| 94 |
Influence of bevel angle and surface charge on the breakdown voltage of negatively beveled diffused p-n junctions
|
Bakowski, Mietek
|
|
1975
|
|
7-8 |
p. 651-654
4 p.
|
artikel
|
| 95 |
Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectric capacitors
|
Goux, L.
|
|
2006
|
|
7-8 |
p. 1227-1234
8 p.
|
artikel
|
| 96 |
Influence of phonon bottleneck on a quantum dot laser
|
Tsuchiya, H.
|
|
1998
|
|
7-8 |
p. 1443-1447
5 p.
|
artikel
|
| 97 |
Infrared induced emission from silicon quantum wires
|
Bagraev, N.T.
|
|
1998
|
|
7-8 |
p. 1199-1204
6 p.
|
artikel
|
| 98 |
In0.75Ga0.25As channel layers with record mobility exceeding 12,000cm2/Vs for use in high-κ dielectric NMOSFETs
|
Droopad, Ravi
|
|
2006
|
|
7-8 |
p. 1175-1177
3 p.
|
artikel
|
| 99 |
Intrinsic limits of thermometers based on Coulomb charging effect in arrays of tunnel junctions
|
Wang, X.H.
|
|
1998
|
|
7-8 |
p. 1397-1400
4 p.
|
artikel
|
| 100 |
Inversion of electron sub-band population in a GaAs/AlGaAs triple barrier tunnelling structure
|
Li, Y.B.
|
|
1998
|
|
7-8 |
p. 1533-1537
5 p.
|
artikel
|
| 101 |
Investigation of oxygen annealing effects on RF sputter deposited SiC thin films
|
Todi, R.M.
|
|
2006
|
|
7-8 |
p. 1189-1193
5 p.
|
artikel
|
| 102 |
Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs
|
Chuang, Ricky W.
|
|
2006
|
|
7-8 |
p. 1212-1215
4 p.
|
artikel
|
| 103 |
Kinetic Monte Carlo simulation of the nucleation stage of the self-organized growth of quantum dots
|
Schöll, E.
|
|
1998
|
|
7-8 |
p. 1587-1591
5 p.
|
artikel
|
| 104 |
Light emission from individual InAs/GaAs self-assembled quantum dots excited by tunneling current injection
|
Yamanaka, K
|
|
1998
|
|
7-8 |
p. 1079-1082
4 p.
|
artikel
|
| 105 |
Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor
|
Chen, W.T.
|
|
2006
|
|
7-8 |
p. 1330-1336
7 p.
|
artikel
|
| 106 |
Magnetic field dependence of the resistance anomaly in superconducting mesoscopic aluminum structures
|
Lee, Seongjae
|
|
1998
|
|
7-8 |
p. 1459-1462
4 p.
|
artikel
|
| 107 |
Magnetic field sensitivity of the Coulomb anomaly in the conductance of a phase-coherent disordered 2-dimensional electron gas
|
den Hartog, S.G
|
|
1998
|
|
7-8 |
p. 1093-1097
5 p.
|
artikel
|
| 108 |
Magnetic force microscopy analysis and quantum transport in ferromagnetic dot structure embedded in semiconductor quantum wires
|
Yamada, S
|
|
1998
|
|
7-8 |
p. 1391-1396
6 p.
|
artikel
|
| 109 |
Magneto-acoustic phonon antiresonances in Wannier–Stark superlattices
|
Nogaret, A.
|
|
1998
|
|
7-8 |
p. 1489-1493
5 p.
|
artikel
|
| 110 |
Magnetocapacitance in quantum Hall regime with external dc current
|
Oto, Kenichi
|
|
1998
|
|
7-8 |
p. 1191-1194
4 p.
|
artikel
|
| 111 |
MagnetocondUctance of a mesoscopic rectangular loop
|
Natori, A.
|
|
1998
|
|
7-8 |
p. 1109-1114
6 p.
|
artikel
|
| 112 |
Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses
|
Sakuma, Y.
|
|
1998
|
|
7-8 |
p. 1341-1347
7 p.
|
artikel
|
| 113 |
Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy
|
Nee, Tzer-En
|
|
1998
|
|
7-8 |
p. 1331-1334
4 p.
|
artikel
|
| 114 |
Metallic nanoparticles for compact nanostructure fabrication and observation of single-electron phenomena at room temperature
|
Radojkovic, P
|
|
1998
|
|
7-8 |
p. 1287-1292
6 p.
|
artikel
|
| 115 |
Metal-semiconductor heterostructures in 3D for electron storage and vertical injection
|
Wernersson, L.E.
|
|
1998
|
|
7-8 |
p. 1599-1603
5 p.
|
artikel
|
| 116 |
Microphotoluminescence studies of high quality single quantum wires
|
Voliotis, V.
|
|
1998
|
|
7-8 |
p. 1217-1221
5 p.
|
artikel
|
| 117 |
Microstructured thin films and multilayers of superconductor and ferromagnetic metal
|
Orito, Akiko
|
|
1998
|
|
7-8 |
p. 1481-1488
8 p.
|
artikel
|
| 118 |
Microwave dielectric properties of (1− x)(Mg0.95Co0.05)TiO3– xCa0.6La0.8/3TiO3 ceramics with V2O5 addition
|
Huang, Cheng-Liang
|
|
2006
|
|
7-8 |
p. 1349-1354
6 p.
|
artikel
|
| 119 |
Millimeter wave generation with a quasi planar superlattice electronic device
|
Schomburg, E.
|
|
1998
|
|
7-8 |
p. 1495-1498
4 p.
|
artikel
|
| 120 |
Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts
|
Dixit, A.
|
|
2006
|
|
7-8 |
p. 1466-1471
6 p.
|
artikel
|
| 121 |
Minority carrier reflecting properties of semiconductor high-low junctions
|
Hauser, J.R.
|
|
1975
|
|
7-8 |
p. 715-716
2 p.
|
artikel
|
| 122 |
Modeling and optimization of series resistance of planar MIM capacitors
|
Bajolet, A.
|
|
2006
|
|
7-8 |
p. 1244-1251
8 p.
|
artikel
|
| 123 |
Modeling for reduced gate capacitance of nanoscale MOSFETs
|
Yue-hua, Dai
|
|
2006
|
|
7-8 |
p. 1472-1474
3 p.
|
artikel
|
| 124 |
Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics
|
Saadoune, A.
|
|
2006
|
|
7-8 |
p. 1178-1182
5 p.
|
artikel
|
| 125 |
Multiband quantum transport with Γ–X valley-mixing via evanescent states
|
Ogawa, M.
|
|
1998
|
|
7-8 |
p. 1527-1532
6 p.
|
artikel
|
| 126 |
Multiphonon photoluminescence and Raman scattering in semiconductor quantum dots
|
Fomin, V.M.
|
|
1998
|
|
7-8 |
p. 1309-1314
6 p.
|
artikel
|
| 127 |
Near-field optical spectroscopy of self-assembled quantum dots: NSOM apparatus for measuring the features of single dots
|
Toda, Y
|
|
1998
|
|
7-8 |
p. 1083-1086
4 p.
|
artikel
|
| 128 |
Noise in luminescent GaAs0·60P0·40 diodes at low injection rates—I
|
Hazendonk, T.J.
|
|
1975
|
|
7-8 |
p. 593-603
11 p.
|
artikel
|
| 129 |
Noise in luminescent GaAs0·60P0·40 diodes under non-uniform avalanche conditions—II
|
Hazendonk, T.J.
|
|
1975
|
|
7-8 |
p. 605-616
12 p.
|
artikel
|
| 130 |
Non-invasive measurements of mesoscopic superconductors by superconducting single electron transistors
|
Sato, Hideki
|
|
1998
|
|
7-8 |
p. 1463-1466
4 p.
|
artikel
|
| 131 |
Non-radiative recombination centers in GaAs0·6P0·4 red light-emitting diodes
|
Forbes, Leonard
|
|
1975
|
|
7-8 |
p. 635-640
6 p.
|
artikel
|
| 132 |
Numerical studies of transport properties through artificial atoms and molecules
|
Eto, Mikio
|
|
1998
|
|
7-8 |
p. 1373-1377
5 p.
|
artikel
|
| 133 |
Observation of shot noise suppression at the peaks of Coulomb oscillations
|
Sasaki, S
|
|
1998
|
|
7-8 |
p. 1429-1431
3 p.
|
artikel
|
| 134 |
Optical characterization and laser operation of InGaAs quantum wires on GaAs multiatomic steps
|
Hara, Shinjiroh
|
|
1998
|
|
7-8 |
p. 1233-1238
6 p.
|
artikel
|
| 135 |
Optical properties of hydrogen terminated silicon nanocrystals
|
Kanemitsu, Yoshihiko
|
|
1998
|
|
7-8 |
p. 1315-1318
4 p.
|
artikel
|
| 136 |
Photocurrent self-oscillations in undoped GaAs/AlAs superlattices modulated by an external ac voltage
|
Ohtani, N.
|
|
1998
|
|
7-8 |
p. 1509-1513
5 p.
|
artikel
|
| 137 |
Photon-assisted Cooper-pair tunneling in a superconducting single-electron transistor
|
Nakamura, Y.
|
|
1998
|
|
7-8 |
p. 1471-1475
5 p.
|
artikel
|
| 138 |
Physical modeling of degenerately doped compound semiconductors for high-performance HBT design
|
Li, James C.
|
|
2006
|
|
7-8 |
p. 1440-1449
10 p.
|
artikel
|
| 139 |
Processes at turn-on of thyristors
|
Cornu, Jozef
|
|
1975
|
|
7-8 |
p. 683-686
4 p.
|
artikel
|
| 140 |
Proposal and analysis of coupled channel tunneling FET with new heterostructures on silicon
|
Tsutsui, M.
|
|
1998
|
|
7-8 |
p. 1547-1551
5 p.
|
artikel
|
| 141 |
Prospects for atomically ordered device structures based on STM lithography
|
Tucker, J.R.
|
|
1998
|
|
7-8 |
p. 1061-1067
7 p.
|
artikel
|
| 142 |
Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth
|
Kristensen, A
|
|
1998
|
|
7-8 |
p. 1103-1107
5 p.
|
artikel
|
| 143 |
Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications
|
Levy, Michael Y.
|
|
2006
|
|
7-8 |
p. 1400-1405
6 p.
|
artikel
|
| 144 |
Rotational transfer and dynamical bunching of an electron in three coupled quantum dots induced by a circularly polarized electric field
|
Tsukada, N.
|
|
1998
|
|
7-8 |
p. 1273-1280
8 p.
|
artikel
|
| 145 |
Scaling of the negative magneto-resistance in an Si atomic-layer-doped GaAs
|
Katsuno, Motonari
|
|
1998
|
|
7-8 |
p. 1557-1560
4 p.
|
artikel
|
| 146 |
Self-organized quantum dots grown on GaAs(311)B by atomic hydrogen-assisted molecular beam epitaxy
|
Akahane, Kouichi
|
|
1998
|
|
7-8 |
p. 1613-1621
9 p.
|
artikel
|
| 147 |
Semiconductor profiling using an optical probe
|
Lile, D.L.
|
|
1975
|
|
7-8 |
p. 699-700
2 p.
|
artikel
|
| 148 |
Sharp photoluminescence lines of InAs quantum dot embedded in GaAs mesa
|
Sugisaki, M.
|
|
1998
|
|
7-8 |
p. 1325-1330
6 p.
|
artikel
|
| 149 |
Shot noise in double barrier structures
|
Isawa, Yoshimasa
|
|
1998
|
|
7-8 |
p. 1515-1521
7 p.
|
artikel
|
| 150 |
Simple parameter extraction method for illuminated solar cells
|
Chegaar, M.
|
|
2006
|
|
7-8 |
p. 1234-1237
4 p.
|
artikel
|
| 151 |
Single electron tunneling device controlled by environmental impedance modulation
|
Wakaya, Fujio
|
|
1998
|
|
7-8 |
p. 1401-1405
5 p.
|
artikel
|
| 152 |
Single electron tunneling through Ge nanocrystal fabricated by cosputtering method
|
Inoue, Yoku
|
|
1998
|
|
7-8 |
p. 1605-1608
4 p.
|
artikel
|
| 153 |
Slow states in InSb/SiOx thin film transistors
|
Sewell, H.
|
|
1975
|
|
7-8 |
p. 641-649
9 p.
|
artikel
|
| 154 |
Spectrum of spontaneous emission observed outside a microcavity
|
Ujihara, Kikuo
|
|
1998
|
|
7-8 |
p. 1439-1442
4 p.
|
artikel
|
| 155 |
Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN
|
Vertiatchikh, Alexei
|
|
2006
|
|
7-8 |
p. 1425-1429
5 p.
|
artikel
|
| 156 |
Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain
|
Miyamoto, Y
|
|
1998
|
|
7-8 |
p. 1467-1470
4 p.
|
artikel
|
| 157 |
Surface-potential solutions to the Pao–Sah voltage equation
|
Shangguan, W.Z.
|
|
2006
|
|
7-8 |
p. 1320-1329
10 p.
|
artikel
|
| 158 |
Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
|
Higashiwaki, Masataka
|
|
1998
|
|
7-8 |
p. 1581-1585
5 p.
|
artikel
|
| 159 |
TFT characteristics with uniformly distributed traps in the semiconductor
|
Refioglu, H.Ilhan
|
|
1975
|
|
7-8 |
p. 720-721
2 p.
|
artikel
|
| 160 |
The effect of local non-uniformities on thermal switching and high field behaviour of structures with chalcogenide glasses
|
Popescu, Corneliu
|
|
1975
|
|
7-8 |
p. 671-681
11 p.
|
artikel
|
| 161 |
The far-infrared magneto-optical response of strongly coupled 2DEGs near the quantum and semi-classical limits
|
Marlow, T.P.
|
|
1998
|
|
7-8 |
p. 1195-1198
4 p.
|
artikel
|
| 162 |
The influence of an energy-dependent relaxation time on the specular and diffuse scattering models of surface conduction in MOS structures
|
Baccarani, G.
|
|
1975
|
|
7-8 |
p. 718-720
3 p.
|
artikel
|
| 163 |
The influence of environmental coupling on phase breaking in open quantum dots
|
Bird, J.P
|
|
1998
|
|
7-8 |
p. 1281-1285
5 p.
|
artikel
|
| 164 |
Theoretical analysis and fabrication of small area metal/insulator resonant tunneling diode integrated with patch antenna for terahertz photon assisted tunneling
|
Asada, M.
|
|
1998
|
|
7-8 |
p. 1543-1546
4 p.
|
artikel
|
| 165 |
Theoretical influence of surface states and bulk traps on thin film transistor characteristics
|
van Calster, A.
|
|
1975
|
|
7-8 |
p. 691-698
8 p.
|
artikel
|
| 166 |
The relative importance of electron–electron and electron–phonon scattering in terahertz quantum cascade lasers
|
Harrison, P.
|
|
1998
|
|
7-8 |
p. 1449-1451
3 p.
|
artikel
|
| 167 |
The role of periodic orbits in coupled, open, ballistic quantum dots
|
Akis, R.
|
|
1998
|
|
7-8 |
p. 1297-1302
6 p.
|
artikel
|
| 168 |
Time resolved far-infrared magneto-optical absorption of a quantum dot array
|
Fujii, K.
|
|
1998
|
|
7-8 |
p. 1349-1353
5 p.
|
artikel
|
| 169 |
Time-resolved luminescence study of InP quantum dots in GaInP matrix
|
Okuno, Tsuyoshi
|
|
1998
|
|
7-8 |
p. 1319-1323
5 p.
|
artikel
|
| 170 |
Transmission antiresonances and novel bound states in cross structures at weak magnetic fields
|
Akis, R.
|
|
1998
|
|
7-8 |
p. 1087-1092
6 p.
|
artikel
|
| 171 |
Transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy
|
Kumakura, K
|
|
1998
|
|
7-8 |
p. 1227-1231
5 p.
|
artikel
|
| 172 |
Tunneling current through self-assembled InAs quantum dots embedded in symmetric and asymmetric AlGaAs barriers
|
Suzuki, T.
|
|
1998
|
|
7-8 |
p. 1303-1307
5 p.
|
artikel
|
| 173 |
Two-dimensional analysis for response of a photo diode array
|
Mukherjee, M.K.
|
|
1975
|
|
7-8 |
p. 716-718
3 p.
|
artikel
|
| 174 |
Universal MOSFET gate impedance model for 200MHz–20GHz frequency range
|
Bandi, Sri Priya R.
|
|
2006
|
|
7-8 |
p. 1450-1460
11 p.
|
artikel
|
| 175 |
Wavefunction delocalization of strongly-localized Stark-ladder states in a GaAs/AlAs superlattice
|
Ando, M.
|
|
1998
|
|
7-8 |
p. 1499-1503
5 p.
|
artikel
|
| 176 |
Wavefunction scarring and classical commensurability in corrugated quantum wires
|
Ochiai, Y
|
|
1998
|
|
7-8 |
p. 1125-1130
6 p.
|
artikel
|
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