| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A generalization of Kubo formalism for hot-electron transport
|
Niez, Jean Jacques
|
|
1988
|
|
3-4 |
p. 559-562
4 p.
|
artikel
|
| 2 |
Analysis of carrier distribution function through Smith-Purcell effect in GaAs/GaAlAs heterostructures
|
Gornik, E.
|
|
1988
|
|
3-4 |
p. 751-754
4 p.
|
artikel
|
| 3 |
Analysis of quantum features in transport theory from a quantum Monte Carlo approach
|
Brunetti, Rossella
|
|
1988
|
|
3-4 |
p. 527-530
4 p.
|
artikel
|
| 4 |
A new Monte Carlo simulation of hot electron transport with electron-electron scattering
|
Hasegawa, A.
|
|
1988
|
|
3-4 |
p. 547-550
4 p.
|
artikel
|
| 5 |
A new Monte Carlo technique for the solution of the Boltzmann transport equation
|
Jacoboni, C.
|
|
1988
|
|
3-4 |
p. 523-526
4 p.
|
artikel
|
| 6 |
An investigation of Li x Ni1−x, O as a mixed-valence thermoelectric material
|
Danko, J.C.
|
|
1961
|
|
3-4 |
p. 233-238
6 p.
|
artikel
|
| 7 |
A simplified approach to transistor admittances
|
Lindmayer, J.
|
|
1961
|
|
3-4 |
p. 278-290
13 p.
|
artikel
|
| 8 |
Attendees list
|
|
|
1988
|
|
3-4 |
p. V-XI
nvt p.
|
artikel
|
| 9 |
Author index
|
|
|
1988
|
|
3-4 |
p. I-III
nvt p.
|
artikel
|
| 10 |
Balance equation approach to hot electron transport in many-valley semiconductors: Comparing with the Monte Carlo results for n-type Si
|
Ting, C.S.
|
|
1988
|
|
3-4 |
p. 551-554
4 p.
|
artikel
|
| 11 |
Ballistic electron transport in GaAs/AlGaAs tunneling junctions with optical phonon emission
|
Hu, P.
|
|
1988
|
|
3-4 |
p. 555-558
4 p.
|
artikel
|
| 12 |
Ballistic Transport
|
Heiblum, M.
|
|
1988
|
|
3-4 |
p. 617-618
2 p.
|
artikel
|
| 13 |
Breakdown of coherence in resonant tunneling through double-barrier heterostructures
|
Goldman, V.J.
|
|
1988
|
|
3-4 |
p. 731-734
4 p.
|
artikel
|
| 14 |
British miniature electronic components and assemblies data annual 1961–1962
|
Gibson, Alan F.
|
|
1961
|
|
3-4 |
p. 325-
1 p.
|
artikel
|
| 15 |
Carrier-carrier interaction and intervalley transfer effects on the ultrafast relaxation of photoexcited electrons in GaAs
|
Osman, M.A.
|
|
1988
|
|
3-4 |
p. 471-474
4 p.
|
artikel
|
| 16 |
Chaotic conductivity oscillation in n-type Si by impact-ionization in freezeout temperature range
|
Yamada, K.
|
|
1988
|
|
3-4 |
p. 809-812
4 p.
|
artikel
|
| 17 |
Characteristics of the space-charge-limited dielectric diode at very high frequencies
|
Shao, J.
|
|
1961
|
|
3-4 |
p. 291-303
13 p.
|
artikel
|
| 18 |
Collective electron interaction in double-barrier GaAs transistors
|
Gružinskis, V.
|
|
1988
|
|
3-4 |
p. 345-347
3 p.
|
artikel
|
| 19 |
Current gain in metal-insulator tunnel triodes
|
|
|
1961
|
|
3-4 |
p. 320-322
3 p.
|
artikel
|
| 20 |
Diffusion coefficients of two-dimensional electron gas in heterojunctions
|
Zimmermann, J.
|
|
1988
|
|
3-4 |
p. 367-370
4 p.
|
artikel
|
| 21 |
Direct observation of intersubband relaxation in narrow multiple quantum well structures
|
Seilmeier, A.
|
|
1988
|
|
3-4 |
p. 767-770
4 p.
|
artikel
|
| 22 |
Double Ridley-Watkins-Hilsum-Gunn effect in compensated GaAs
|
Xu, Jingming
|
|
1988
|
|
3-4 |
p. 607-610
4 p.
|
artikel
|
| 23 |
Effect of continuum resonances on hot carrier transport in quantum wells
|
Porod, Wolfgang
|
|
1988
|
|
3-4 |
p. 359-362
4 p.
|
artikel
|
| 24 |
Electrical characteristics of a reduced-area, rhodium-plated, silicon end contact
|
Green, M.
|
|
1961
|
|
3-4 |
p. 326-
1 p.
|
artikel
|
| 25 |
Electric field-induced magnetophonon resonance
|
Mori, N.
|
|
1988
|
|
3-4 |
p. 777-780
4 p.
|
artikel
|
| 26 |
Electrode geometries for which the transverse magnetoresistance is equivalent to that of a corbino disk
|
Green, Milton
|
|
1961
|
|
3-4 |
p. 314-316
3 p.
|
artikel
|
| 27 |
Electron-electron scattering during femtosecond photoexcitation in quantum wells
|
Goodnick, S.M.
|
|
1988
|
|
3-4 |
p. 463-466
4 p.
|
artikel
|
| 28 |
Electron gas heating and cooling effects by microwave electric fields in compensated InSb
|
Ašmontas, S.
|
|
1988
|
|
3-4 |
p. 701-703
3 p.
|
artikel
|
| 29 |
Electron-hole drag in semiconductors
|
Höpfel, R.A.
|
|
1988
|
|
3-4 |
p. 643-648
6 p.
|
artikel
|
| 30 |
Electronics: a bibliographical guide
|
Gibson, Alan F.
|
|
1961
|
|
3-4 |
p. 325-326
2 p.
|
artikel
|
| 31 |
Electron transport in GaAs/AlxGa1−xAs heterojunctions at low temperatures
|
Artaki, M.
|
|
1988
|
|
3-4 |
p. 383-386
4 p.
|
artikel
|
| 32 |
Electron tunneling from donors and excitons
|
Dargys, A.
|
|
1988
|
|
3-4 |
p. 717-722
6 p.
|
artikel
|
| 33 |
Electron tunnelling into interfacial Landau states in single barrier N-type (InGa)As/InP/(InGa)As heterostructures
|
Chan, K.S.
|
|
1988
|
|
3-4 |
p. 711-716
6 p.
|
artikel
|
| 34 |
Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures
|
Masselink, W.T.
|
|
1988
|
|
3-4 |
p. 337-340
4 p.
|
artikel
|
| 35 |
Encyclopaedic dictionary of physics.
|
Pincherle, L.
|
|
1961
|
|
3-4 |
p. 324-325
2 p.
|
artikel
|
| 36 |
Energy and spin polarization analysis of near band gap photoemission in AlGaAs/GaAs heterostructures
|
Ciccacci, F.
|
|
1988
|
|
3-4 |
p. 489-492
4 p.
|
artikel
|
| 37 |
Energy relaxation in p- and n-GaAs quantum wells: Confinement effects
|
Tatham, M.
|
|
1988
|
|
3-4 |
p. 459-462
4 p.
|
artikel
|
| 38 |
Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices
|
Kizilyalli, Isik.C.
|
|
1988
|
|
3-4 |
p. 355-357
3 p.
|
artikel
|
| 39 |
Ensemble Monte Carlo simulations of femtosecond energy relaxation of photoexcited electrons in bulk GaAs
|
Bailey, D.W.
|
|
1988
|
|
3-4 |
p. 467-470
4 p.
|
artikel
|
| 40 |
Extremely enhanced I–V collapse of n+-AlxGa1-xAs / GaAs MODFET with AlAs mole fraction x higher than 0.4
|
Kobayashi, T.
|
|
1988
|
|
3-4 |
p. 603-606
4 p.
|
artikel
|
| 41 |
Far IR luminescence of hot holes in Ge: Diagnostics of intersubband population inversion and effects of uniaxial stress
|
Gavrilenko, V.I.
|
|
1988
|
|
3-4 |
p. 755-758
4 p.
|
artikel
|
| 42 |
Femtosecond hot carrier energy redistribution in GaAs and AlGaAs
|
Schoenlein, R.W.
|
|
1988
|
|
3-4 |
p. 443-446
4 p.
|
artikel
|
| 43 |
Femtosecond relaxation dynamics of nonequilibrium carriers in GaAs and related compounds
|
Tang, C.L.
|
|
1988
|
|
3-4 |
p. 439-442
4 p.
|
artikel
|
| 44 |
Femtosecond spectroscopy and transport
|
Shank, Charles V.
|
|
1988
|
|
3-4 |
p. 397-399
3 p.
|
artikel
|
| 45 |
Feynman path integral study of confined carriers subject to a statistical potential
|
Register, L.F.
|
|
1988
|
|
3-4 |
p. 563-566
4 p.
|
artikel
|
| 46 |
Foreword
|
Shah, Jagdeep
|
|
1988
|
|
3-4 |
p. ix-
1 p.
|
artikel
|
| 47 |
Generation-recombination noise of hot carriers in semiconductors
|
Reggiani, Lino
|
|
1988
|
|
3-4 |
p. 543-546
4 p.
|
artikel
|
| 48 |
Growing heavily compensated germanium crystals of known impurity concentrations
|
Lambert, L.M.
|
|
1961
|
|
3-4 |
p. 316-317
2 p.
|
artikel
|
| 49 |
Growth of semiconducting compounds from non-stoichiometric melts
|
Hurle, D.T.J.
|
|
1961
|
|
3-4 |
p. 317-320
4 p.
|
artikel
|
| 50 |
Heating of cold electrons by a warm GaAs lattice: A novel probe to carrier-phonon interaction
|
Rühle, W.W.
|
|
1988
|
|
3-4 |
p. 407-412
6 p.
|
artikel
|
| 51 |
High density femtosecond excitation of nonthermal carrier distributions in intrinsic and modulation doped Gaas quantum wells
|
Knox, Wayne H.
|
|
1988
|
|
3-4 |
p. 425-430
6 p.
|
artikel
|
| 52 |
High field hot electron transport through AlxGa1-xAs multiquantum well superlattices
|
Levine, B.F.
|
|
1988
|
|
3-4 |
p. 583-587
5 p.
|
artikel
|
| 53 |
High resolution studies of 2 D plasma transport in GaAs/GaAlAs quantum wells
|
Hillmer, H.
|
|
1988
|
|
3-4 |
p. 485-488
4 p.
|
artikel
|
| 54 |
Hole-acoustic phonon energy loss rates in GaAs quantum wells determined by light scattering
|
Pinczuk, A.
|
|
1988
|
|
3-4 |
p. 477-479
3 p.
|
artikel
|
| 55 |
Hot carrier energy loss rates in GaInAs/InP quantum wells
|
Westland, D.J.
|
|
1988
|
|
3-4 |
p. 431-434
4 p.
|
artikel
|
| 56 |
Hot carrier relaxation and recombination in GaSb/AlSb quantum wells
|
Cebulla, U.
|
|
1988
|
|
3-4 |
p. 507-510
4 p.
|
artikel
|
| 57 |
Hot carrier relaxation in highly excited III–V compounds
|
Kurz, H.
|
|
1988
|
|
3-4 |
p. 447-450
4 p.
|
artikel
|
| 58 |
Hot carrier relaxation phenomena detected by optically induced magnetization
|
Krenn, H.
|
|
1988
|
|
3-4 |
p. 481-484
4 p.
|
artikel
|
| 59 |
Hot carrier trapping in GaAs/AlGaAs single quantum wells with different confinement structures
|
Polland, H.-J.
|
|
1988
|
|
3-4 |
p. 341-344
4 p.
|
artikel
|
| 60 |
Hot electron capture in GaAs MQW: NDR and persistent effects
|
Balkan, N.
|
|
1988
|
|
3-4 |
p. 799-803
5 p.
|
artikel
|
| 61 |
Hot electron distribution and transport in AlGaAs/GaAs/AlGaAs quantum wells
|
Makiyama, K.
|
|
1988
|
|
3-4 |
p. 371-374
4 p.
|
artikel
|
| 62 |
Hot electron dynamics in device structures
|
Hayes, J.R.
|
|
1988
|
|
3-4 |
p. 619-623
5 p.
|
artikel
|
| 63 |
Hot electron energy relaxation via acoustic phonon emission in InP/In0.53Ga0.47As heterostructures and single quantum wells
|
Barlow, M.J.
|
|
1988
|
|
3-4 |
p. 501-505
5 p.
|
artikel
|
| 64 |
Hot electron relaxation in polar semiconductors
|
Das Sarma, S.
|
|
1988
|
|
3-4 |
p. 695-700
6 p.
|
artikel
|
| 65 |
Hot electrons in SiO2: ballistic to steady-state transport
|
Fischetti, M.V.
|
|
1988
|
|
3-4 |
p. 629-636
8 p.
|
artikel
|
| 66 |
Hot electron transport parallel to strong magnetic fields in gallium arsenide
|
Hellman, E.S.
|
|
1988
|
|
3-4 |
p. 785-788
4 p.
|
artikel
|
| 67 |
Hot phonon dynamics
|
Lugli, Paolo
|
|
1988
|
|
3-4 |
p. 667-672
6 p.
|
artikel
|
| 68 |
Hot phonons in GaAs revisited
|
Pötz, W.
|
|
1988
|
|
3-4 |
p. 673-676
4 p.
|
artikel
|
| 69 |
Hydrodynamic hot-electron transport model with Monte Carlo-generated transport parameters
|
Woolard, D.L.
|
|
1988
|
|
3-4 |
p. 571-574
4 p.
|
artikel
|
| 70 |
Impact ionization and choatic states in narrow-gap semiconductors under a strong magnetic field
|
Abe, Yutaka
|
|
1988
|
|
3-4 |
p. 795-798
4 p.
|
artikel
|
| 71 |
Impact ionization and electric field quenching of photoluminescence in silicon
|
Weman, H.
|
|
1988
|
|
3-4 |
p. 791-794
4 p.
|
artikel
|
| 72 |
Improvement of semiconducting devices by elastic strain
|
Pfann, W.G.
|
|
1961
|
|
3-4 |
p. 261-267
7 p.
|
artikel
|
| 73 |
Indium antimonide transistors
|
Henneke, H.L.
|
|
1961
|
|
3-4 |
p. 159-166
8 p.
|
artikel
|
| 74 |
Influence of wafer thickness and carrier recombination on the cutoff frequency of alloy-junction transistors
|
Amer, S.
|
|
1961
|
|
3-4 |
p. 304-308
5 p.
|
artikel
|
| 75 |
Initial relaxation of photoexcited carriers in GaAs and GaAs quantum wells under subpicosecond excitation
|
Deveaud, Benoit
|
|
1988
|
|
3-4 |
p. 435-438
4 p.
|
artikel
|
| 76 |
Interaction between layers by electron-electron scattering
|
Jacoboni, Carlo
|
|
1988
|
|
3-4 |
p. 649-652
4 p.
|
artikel
|
| 77 |
Intersubband relaxation of photoexcited hot carriers in quantum wells
|
Oberli, D.Y.
|
|
1988
|
|
3-4 |
p. 413-418
6 p.
|
artikel
|
| 78 |
Inverted populations of hot electrons in a magnetic field: The effects of electron-electron and impurity scattering in n-GaAs
|
Abou El-Ela, F.
|
|
1988
|
|
3-4 |
p. 691-694
4 p.
|
artikel
|
| 79 |
Investigations of recombination mechanisms in the pulsed far infra red photoresponse of n-InP
|
Rikken, G.L.J.A.
|
|
1988
|
|
3-4 |
p. 763-766
4 p.
|
artikel
|
| 80 |
Laser induced cooling of hot electrons in n-InSb by free carrier assisted transitions
|
Hanes, L.K.
|
|
1988
|
|
3-4 |
p. 493-496
4 p.
|
artikel
|
| 81 |
Low frequency and chaotic current oscillations in semiinsulating GaAs
|
Knap, W.
|
|
1988
|
|
3-4 |
p. 813-816
4 p.
|
artikel
|
| 82 |
Magnetic field-dependent hot carrier relaxation in GaAs quantum wells
|
Turberfield, A.J.
|
|
1988
|
|
3-4 |
p. 387-390
4 p.
|
artikel
|
| 83 |
Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As
|
Leadbeater, M.L.
|
|
1988
|
|
3-4 |
p. 707-710
4 p.
|
artikel
|
| 84 |
Measurements of hot electron magnetophonon resonance in GaAs/GaAlAs heterostructures
|
Leadley, D.R.
|
|
1988
|
|
3-4 |
p. 781-784
4 p.
|
artikel
|
| 85 |
Microscopic high field transport in graded heterostructures
|
Al-Omar, A.
|
|
1988
|
|
3-4 |
p. 329-332
4 p.
|
artikel
|
| 86 |
Monte Carlo investigation of minority electron transport in In0.53Ga0.47As
|
Osman, M.A.
|
|
1988
|
|
3-4 |
p. 653-656
4 p.
|
artikel
|
| 87 |
Monte-Carlo simulation of hot electron spectra
|
Beton, P.H.
|
|
1988
|
|
3-4 |
p. 637-640
4 p.
|
artikel
|
| 88 |
Monte-Carlo study of the double heterojunction bipolar transistor
|
Pelouard, J-L.
|
|
1988
|
|
3-4 |
p. 333-336
4 p.
|
artikel
|
| 89 |
New results on stimulated emission from p-Germanium in crossed fields
|
Helm, M.
|
|
1988
|
|
3-4 |
p. 759-762
4 p.
|
artikel
|
| 90 |
Nomograph technique for doping determination in germanium and silicon crystal growing
|
Hemmat, N.
|
|
1961
|
|
3-4 |
p. 309-314
6 p.
|
artikel
|
| 91 |
Nonequilibrium carrier-phonon coupling in a semiconductor quantum well
|
Marchetti, M.C.
|
|
1988
|
|
3-4 |
p. 677-681
5 p.
|
artikel
|
| 92 |
Nonequilibrium phonon effects on hot carrier transport and thermal noise in semiconductor heterostructures
|
Lei, X.L.
|
|
1988
|
|
3-4 |
p. 531-534
4 p.
|
artikel
|
| 93 |
Nonequilibrium phonon effects on the time-dependent relaxation of hot carriers in GaAs MQW
|
Kai Shum, M.R.Junnarkar
|
|
1988
|
|
3-4 |
p. 451-454
4 p.
|
artikel
|
| 94 |
Nonlinear energy relaxation oscillations and chaotic dynamics of hot carriers
|
Schöll, Eckehard
|
|
1988
|
|
3-4 |
p. 539-542
4 p.
|
artikel
|
| 95 |
Nonlinear modulation of hot carrier mobility and optical absorption in photoexcited polar semiconductors
|
Rodriguez, M.A.
|
|
1988
|
|
3-4 |
p. 511-514
4 p.
|
artikel
|
| 96 |
Normal and hot electron magneto-phonon resonance in a GaAs-heterostructure
|
Warmenbol, P.
|
|
1988
|
|
3-4 |
p. 771-775
5 p.
|
artikel
|
| 97 |
On the analytical approach to the real space electron transfer in GaAsAlGaAs heterostructures
|
Moško, Martin
|
|
1988
|
|
3-4 |
p. 363-366
4 p.
|
artikel
|
| 98 |
Opening address
|
Shah, Jagdeep
|
|
1988
|
|
3-4 |
p. xv-
1 p.
|
artikel
|
| 99 |
Picosecond Raman scattering from non-equilibrium LO and TO phonons in germanium
|
Young, J.F.
|
|
1988
|
|
3-4 |
p. 455-458
4 p.
|
artikel
|
| 100 |
Progress in very high pressure research
|
Warschauer, Douglas
|
|
1961
|
|
3-4 |
p. 323-324
2 p.
|
artikel
|
| 101 |
Quantitative characterization of chaotic current oscillations in GaAs:Cr
|
Požela, J.
|
|
1988
|
|
3-4 |
p. 805-808
4 p.
|
artikel
|
| 102 |
Quantum corrections to the Monte Carlo solution of hot-electron transport in semiconductors
|
Jauho, Antti-Pekka
|
|
1988
|
|
3-4 |
p. 535-538
4 p.
|
artikel
|
| 103 |
Quantum transport and solid-state dynamics for Bloch electrons in an electric field
|
Iafrate, Gerald J.
|
|
1988
|
|
3-4 |
p. 517-521
5 p.
|
artikel
|
| 104 |
Quantum transport modeling of resonant-tunneling devices
|
Frensley, William R.
|
|
1988
|
|
3-4 |
p. 739-742
4 p.
|
artikel
|
| 105 |
Quantum tunneling properties from a Wigner function study
|
Kluksdahl, N.C.
|
|
1988
|
|
3-4 |
p. 743-746
4 p.
|
artikel
|
| 106 |
Real space hot electron distributions and transfer effects in heterostructures
|
Cho, Y.
|
|
1988
|
|
3-4 |
p. 325-328
4 p.
|
artikel
|
| 107 |
Real space transfer: Generalized approach to transport in confined geometries
|
Hess, K.
|
|
1988
|
|
3-4 |
p. 319-324
6 p.
|
artikel
|
| 108 |
Real space transfer of two dimensional electrons in double quantum well structures
|
Sawaki, N.
|
|
1988
|
|
3-4 |
p. 351-354
4 p.
|
artikel
|
| 109 |
Reduced intervalley transfer in a GaAsAlGaAs heterojunction
|
Nederveen, K.
|
|
1988
|
|
3-4 |
p. 375-377
3 p.
|
artikel
|
| 110 |
Resonant-tunneling hot electron transistor (RHET)
|
Yokoyama, N.
|
|
1988
|
|
3-4 |
p. 577-582
6 p.
|
artikel
|
| 111 |
Resonant tunneling through quantum wells: Physics and device applications
|
Capasso, F.
|
|
1988
|
|
3-4 |
p. 723-729
7 p.
|
artikel
|
| 112 |
Room temperature operation of unipolar hot electron transistors
|
Levi, A.F.J.
|
|
1988
|
|
3-4 |
p. 625-628
4 p.
|
artikel
|
| 113 |
Scattering processes in semiconductors
|
Combescot, Monique
|
|
1988
|
|
3-4 |
p. 657-661
5 p.
|
artikel
|
| 114 |
Secondary emission studies of hot carrier relaxation in polar semiconductors
|
Kash, J.A.
|
|
1988
|
|
3-4 |
p. 419-424
6 p.
|
artikel
|
| 115 |
Simulations of nonlinear transport in AlGaAs/GaAs single well heterostructures
|
Kim, K.
|
|
1988
|
|
3-4 |
p. 349-350
2 p.
|
artikel
|
| 116 |
Spatio-temporal instabilities in the electric breakdown of p-germanium
|
Peinke, J.
|
|
1988
|
|
3-4 |
p. 817-820
4 p.
|
artikel
|
| 117 |
Study of the fast transient behaviour of peltier junctions
|
Landecker, K.
|
|
1961
|
|
3-4 |
p. 239-260
22 p.
|
artikel
|
| 118 |
The effect of hot phonons and coupled phonon-plasmon modes on scattering-induced NDR in quantum wells
|
Ridley, B.K.
|
|
1988
|
|
3-4 |
p. 683-685
3 p.
|
artikel
|
| 119 |
The effect of reflecting contacts on high field transport
|
Arnold, D.
|
|
1988
|
|
3-4 |
p. 593-594
2 p.
|
artikel
|
| 120 |
The effects of band structure on electron-hole Coulomb scattering
|
Young, J.F.
|
|
1988
|
|
3-4 |
p. 663-666
4 p.
|
artikel
|
| 121 |
The influence of cathode contacts on near-micron InP transferred electron devices
|
Czekaj, J.
|
|
1988
|
|
3-4 |
p. 599-602
4 p.
|
artikel
|
| 122 |
Theoretical and experimental investigations of the heterostructure hot electron diode
|
Emanuel, M.A.
|
|
1988
|
|
3-4 |
p. 589-592
4 p.
|
artikel
|
| 123 |
Theoretical current gain of a cylindrical mesa transistor
|
Kennedy, David P.
|
|
1961
|
|
3-4 |
p. 215-225
11 p.
|
artikel
|
| 124 |
Theory of the Esaki diode frequency converter
|
Pucel, Robert A.
|
|
1961
|
|
3-4 |
p. 167-207
41 p.
|
artikel
|
| 125 |
The performance of a convectively cooled thermoelement used for power generation
|
Rollinger, Charles N.
|
|
1961
|
|
3-4 |
p. 268-277
10 p.
|
artikel
|
| 126 |
The selective melting of germanium by thermal radiation
|
Taylor, T.C.
|
|
1961
|
|
3-4 |
p. 226-232
7 p.
|
artikel
|
| 127 |
The submicron inverted MODFET I-GaAs/N+-AlGaAs: a 2D Monte-Carlo study
|
Fauquembergue, R.
|
|
1988
|
|
3-4 |
p. 595-598
4 p.
|
artikel
|
| 128 |
The use of linearly graded composition AlGaAs injectors for intervalley transfer in GaAs: theory and experiment
|
Couch, N.R.
|
|
1988
|
|
3-4 |
p. 613-616
4 p.
|
artikel
|
| 129 |
Transient hot-phonon effects on the velocity overshoot of GaAs: A Monte Carlo analysis
|
Rieger, M.
|
|
1988
|
|
3-4 |
p. 687-690
4 p.
|
artikel
|
| 130 |
Transport correlation coefficients and photoconductive switching
|
Grondin, Robert O.
|
|
1988
|
|
3-4 |
p. 567-570
4 p.
|
artikel
|
| 131 |
Transport in photoexcited hot carriers systems
|
Freire, V.N.
|
|
1988
|
|
3-4 |
p. 497-499
3 p.
|
artikel
|
| 132 |
Tunnel-diode power
|
Dermit, G.
|
|
1961
|
|
3-4 |
p. 208-214
7 p.
|
artikel
|
| 133 |
Tunneling studies of the miniband structure of a superlattice
|
England, P.
|
|
1988
|
|
3-4 |
p. 735-737
3 p.
|
artikel
|
| 134 |
Tunneling times for wave packets narrow in wave-number space
|
Hauge, E.H.
|
|
1988
|
|
3-4 |
p. 747-748
2 p.
|
artikel
|
| 135 |
Ultrafast relaxation of hot photoexcited carriers in GaAs
|
Ferry, D.K.
|
|
1988
|
|
3-4 |
p. 401-406
6 p.
|
artikel
|
| 136 |
Ultrafast S-type NDC and self-oscillations under vertical transport in multilayer heterostructures
|
Belyantsev, A.M.
|
|
1988
|
|
3-4 |
p. 379-382
4 p.
|
artikel
|
| 137 |
Warm electron coefficient of two dimensional electron gas in a GaAs-AlGaAs heterojunctions at low temperatures
|
Basu, P.K.
|
|
1988
|
|
3-4 |
p. 391-394
4 p.
|
artikel
|
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