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                             46 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Anisotropic magnetoconductance in metallic doped Ge:Sb Ootuka, Youiti
 1985
 1-2 p. 101-107
 artikel
2 Anomalous temperature dependence of 29Si NMR in heavily phosphorus doped silicon Ikehata, S.
 1985
 1-2 p. 208
 artikel
3 Bandgap narrowing due to many body effects in heavily doped semiconductors Abram, R.A.
 1985
 1-2 p. 203
 artikel
4 Band-gap narrowing in the space-charge region of heavily doped silicon diodes Lowney, Jeremiah R.
 1985
 1-2 p. 187-191
 artikel
5 Band tails in semiconductors Kane, Evan O.
 1985
 1-2 p. 3-10
 artikel
6 Bound state energy and line width due to the resonant interaction between optical phonon and electronic transitions in degenerate silicon Jouanne, M.
 1985
 1-2 p. 39-45
 artikel
7 Comments on the Coulomb glass Pollak, M.
 1985
 1-2 p. 143-144
 artikel
8 Conduction band tail estimated by X1–X3 splitting energy in heavily doped n-GaP Endo, T.
 1985
 1-2 p. 205
 artikel
9 Coulomb gap in disordered insulators Hunt, A.
 1985
 1-2 p. 206-207
 artikel
10 Disorder, fluctuations and electron interactions in doped semiconductors: A multiple-scattering approach Ghazali, A.
 1985
 1-2 p. 145-149
 artikel
11 Editorial Board 1985
 1-2 p. IFC
 artikel
12 Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductors Glicksman, Maurice
 1985
 1-2 p. 151-161
 artikel
13 Effects of the Anderson localization on magnetoconductivity in metallic n-InSb and n-GaAs Morita, S.
 1985
 1-2 p. 113-119
 artikel
14 Electron and phonon self-energies in heavily doped germanium and silicon Cardona, Manuel
 1985
 1-2 p. 31-38
 artikel
15 Electronic structure of ultraheavily doped silicon Vergés, J.A.
 1985
 1-2 p. 216
 artikel
16 Ellipsometric study of the etch-stop mechanism in heavily doped silicon Palik, E.D.
 1985
 1-2 p. 209
 artikel
17 Energy-gap reduction in heavily doped silicon: Causes and consequences Pantelides, Sokrates T.
 1985
 1-2 p. 17-24
 artikel
18 Enhanced spin-lattice relaxation near the metal-insulator transition Paalanen, M.A.
 1985
 1-2 p. 121-125
 artikel
19 Foreword Landsberg, P.T.
 1985
 1-2 p. v
 artikel
20 Heavily doped silicon studied by luminescence and selective absorption Wagner, Joachim
 1985
 1-2 p. 25-30
 artikel
21 Heavy doping effects on bandgaps, effective intrinsic carrier concentrations and carrier mobilities and lifetimes Bennett, Herbert S.
 1985
 1-2 p. 193-200
 artikel
22 Impurity hopping transport in moderately doped, lightly-compensated semiconductors Baron, R.
 1985
 1-2 p. 204
 artikel
23 Interaction effects in the weakly localized regime and the anomalous conductivity of Sb-doped Ge at low temperature Fukuyama, H.
 1985
 1-2 p. 163-169
 artikel
24 Introduction Reyes, R.W.
 1985
 1-2 p. vii
 artikel
25 Is expanded fluid mercury an excitonic insulator? Turkevich, Leonid A.
 1985
 1-2 p. 213
 artikel
26 Is there ever a minimum metallic conductivity? Mott, N.F.
 1985
 1-2 p. 57-59
 artikel
27 Lifetime broadening of a parabolic band edge of a pure semiconductor at various temperatures Landsberg, P.T.
 1985
 1-2 p. 137-141
 artikel
28 Magnetic tuning of the metal-insulator transition in n-InSb at very low temperatures Mansfield, R.
 1985
 1-2 p. 109-112
 artikel
29 Measuring and modeling minority carrier transport in heavily doped silicon del Alamo, J.
 1985
 1-2 p. 47-54
 artikel
30 Metal-insulator transition in the amorphous Si 1−x Au x system with a strong spin-orbit interaction Nishida, Nobuhiko
 1985
 1-2 p. 81-86
 artikel
31 Nuclear resonance in Ge:As under 〈111〉 stress Tunstall, D.P.
 1985
 1-2 p. 212
 artikel
32 Optical and elastic properties of ultraheavily doped silicon Sood, A.K.
 1985
 1-2 p. 210
 artikel
33 Recent developments and open questions on the absence of diffusion in random lattices Anderson, P.W.
 1985
 1-2 p. 204
 artikel
34 Renormalization group theory of the Anderson transition and its application to doped semiconductors Kawabata, Arisato
 1985
 1-2 p. 131-134
 artikel
35 Self-consistent treatment of screening and Coulomb scattering in silicon inversion layers at low temperatures Stern, Frank
 1985
 1-2 p. 211
 artikel
36 The effect of electron-hole scattering on minority carrier transport in bipolar transistors Dumke, W.P.
 1985
 1-2 p. 183-186
 artikel
37 The fascinating melting of silicon at T = 0 Combescot, Monique
 1985
 1-2 p. 205
 artikel
38 The logarithmic temperature dependence of the resistivity near the Anderson transition in doped semiconductors Ochiai, Y.
 1985
 1-2 p. 208
 artikel
39 The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition Shafarman, W.N.
 1985
 1-2 p. 93-99
 artikel
40 The magnetic field induced metal-insulator transition in indium phosphide and silicon Long, A.P.
 1985
 1-2 p. 61-72
 artikel
41 The metal-insulator transition in amorphous Nb:Si Bishop, D.J.
 1985
 1-2 p. 73-79
 artikel
42 The metal-insulator transition in magnetic semiconductors: Transport in Gd −x v x S 4 von Molnár, S.
 1985
 1-2 p. 127-130
 artikel
43 The mobility and dynamical conductivity of Na-doped Si-(100) MOS systems Gold, A.
 1985
 1-2 p. 87-91
 artikel
44 Transport along grain boundaries in germanium bicrystals at low temperatures Landwehr, G.
 1985
 1-2 p. 171-180
 artikel
45 Transport in heavily doped devices Van Vliet, Carolyn M.
 1985
 1-2 p. 214-215
 artikel
46 Very heavily doped semiconductors as a “nearly-free-electron-gas” system Berggren, K.-F.
 1985
 1-2 p. 11-15
 artikel
                             46 gevonden resultaten
 
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