| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC conductivity in porous silicon
|
Chorin, M.Ben
|
|
1993
|
57 |
1-6 |
p. 159-162
4 p.
|
artikel
|
| 2 |
A fluorescence-line-narrowing study of the broad porous-silicon luminescence band
|
Xing, J.
|
|
1993
|
57 |
1-6 |
p. 147-151
5 p.
|
artikel
|
| 3 |
Aging phenomena of light emitting porous silicon
|
Ito, Toshimichi
|
|
1993
|
57 |
1-6 |
p. 331-339
9 p.
|
artikel
|
| 4 |
A model for the electroluminescence of porous n-silicon
|
Kozlowski, F.
|
|
1993
|
57 |
1-6 |
p. 163-167
5 p.
|
artikel
|
| 5 |
A non-destructive study of the microscopic structure of porous Si
|
Münder, H.
|
|
1993
|
57 |
1-6 |
p. 5-8
4 p.
|
artikel
|
| 6 |
Author index
|
|
|
1993
|
57 |
1-6 |
p. 351-354
4 p.
|
artikel
|
| 7 |
Carrier injection and transport in porous silicon Schottky diodes
|
Pulsford, N.J.
|
|
1993
|
57 |
1-6 |
p. 181-184
4 p.
|
artikel
|
| 8 |
Characterisation of porous silicon layers by spectroscopic ellipsometry
|
Rossow, U.
|
|
1993
|
57 |
1-6 |
p. 205-209
5 p.
|
artikel
|
| 9 |
Comparison of room temperature photoluminescence decays in anodically oxidized crystalline and X-ray-amorphous porous silicon
|
Bustarret, E.
|
|
1993
|
57 |
1-6 |
p. 105-109
5 p.
|
artikel
|
| 10 |
Defect and structure analysis of n+-, p+- and p-type porous silicon by the electron paramagnetic resonance technique
|
von Bardeleben, H.J.
|
|
1993
|
57 |
1-6 |
p. 301-313
13 p.
|
artikel
|
| 11 |
Editorial Board
|
|
|
1993
|
57 |
1-6 |
p. vi-
1 p.
|
artikel
|
| 12 |
Effect of substrate roughness on porous silicon light emission
|
Di Francia, G.
|
|
1993
|
57 |
1-6 |
p. 95-99
5 p.
|
artikel
|
| 13 |
Electrically induced selective quenching of porous silicon photoluminescence
|
Bsiesy, A.
|
|
1993
|
57 |
1-6 |
p. 29-32
4 p.
|
artikel
|
| 14 |
Electrical properties of luminescent porous silicon
|
Koyama, Hideki
|
|
1993
|
57 |
1-6 |
p. 293-299
7 p.
|
artikel
|
| 15 |
Electron bombardment effects on light emitting porous silicon
|
Calliari, L.
|
|
1993
|
57 |
1-6 |
p. 83-87
5 p.
|
artikel
|
| 16 |
Excitons in silicon nanostructures
|
Allan, G
|
|
1993
|
57 |
1-6 |
p. 239-242
4 p.
|
artikel
|
| 17 |
Experimental and theoretical aspects of radiative processes in porous silicon
|
Fishman, Guy
|
|
1993
|
57 |
1-6 |
p. 235-238
4 p.
|
artikel
|
| 18 |
Growth of polyaniline films on porous silicon layers
|
Matveeva, E.
|
|
1993
|
57 |
1-6 |
p. 175-180
6 p.
|
artikel
|
| 19 |
In situ photoluminescence and photomodulated infrared study of porous silicon during etching and in ambient
|
Durin, V.M.
|
|
1993
|
57 |
1-6 |
p. 61-65
5 p.
|
artikel
|
| 20 |
Investigation of different oxidation processes for porous Si by XPS
|
Münder, H.
|
|
1993
|
57 |
1-6 |
p. 223-226
4 p.
|
artikel
|
| 21 |
Investigation of optical properties of free-standing porous silicon films by absorption and mirage effect
|
Vincent, G.
|
|
1993
|
57 |
1-6 |
p. 217-221
5 p.
|
artikel
|
| 22 |
Investigation of the luminescence properties of Si/βFeSi2/Si heterojunction structures fabricated by ion beam synthesis
|
Hunt, Tim D.
|
|
1993
|
57 |
1-6 |
p. 25-27
3 p.
|
artikel
|
| 23 |
Ionoluminescence of porous silicon
|
Z̊uk, J.
|
|
1993
|
57 |
1-6 |
p. 57-60
4 p.
|
artikel
|
| 24 |
Low-energy scanning cathodoluminescence spectroscopy and microscopy of porous silicon layers
|
Gu, M.
|
|
1993
|
57 |
1-6 |
p. 315-319
5 p.
|
artikel
|
| 25 |
Luminescence and optical properties of siloxene
|
Stutzmann, M.
|
|
1993
|
57 |
1-6 |
p. 321-330
10 p.
|
artikel
|
| 26 |
Luminescence properties and surface topography of porous silicon
|
Mauckner, G.
|
|
1993
|
57 |
1-6 |
p. 211-215
5 p.
|
artikel
|
| 27 |
Magnetic properties of light-emitting porous silicon
|
Laiho, R.
|
|
1993
|
57 |
1-6 |
p. 197-200
4 p.
|
artikel
|
| 28 |
Materials index
|
|
|
1993
|
57 |
1-6 |
p. 357-
1 p.
|
artikel
|
| 29 |
Morphology of porous n-type silicon obtained by photoelectrochemical etching II
|
Albu-Yaron, Ana
|
|
1993
|
57 |
1-6 |
p. 67-71
5 p.
|
artikel
|
| 30 |
Nanocrystallites in luminescent porous silicon characterized by Raman scattering
|
Gregora, I.
|
|
1993
|
57 |
1-6 |
p. 73-76
4 p.
|
artikel
|
| 31 |
Nonradiative recombination on dangling bonds in silicon crystallites
|
Lannoo, M.
|
|
1993
|
57 |
1-6 |
p. 243-247
5 p.
|
artikel
|
| 32 |
Optical investigation of porous silicon membranes
|
Massone, E.
|
|
1993
|
57 |
1-6 |
p. 51-55
5 p.
|
artikel
|
| 33 |
Optical properties of H terminated Si quantum wires
|
Polatoglou, H.M.
|
|
1993
|
57 |
1-6 |
p. 117-120
4 p.
|
artikel
|
| 34 |
Partial oxidation of porous silicon by thermal process: study of structure and electronic defects
|
Morazzani, V.
|
|
1993
|
57 |
1-6 |
p. 45-49
5 p.
|
artikel
|
| 35 |
Pb-defects and visible photoluminescence in porous silicon
|
von Bardeleben, H.J.
|
|
1993
|
57 |
1-6 |
p. 39-43
5 p.
|
artikel
|
| 36 |
Photo- and electro-luminescence from porous Si
|
Kaneko, H.
|
|
1993
|
57 |
1-6 |
p. 101-104
4 p.
|
artikel
|
| 37 |
Photoluminescence and electroluminescence from electrochemically oxidized porous silicon layers
|
Muller, F.
|
|
1993
|
57 |
1-6 |
p. 283-292
10 p.
|
artikel
|
| 38 |
Photoluminescence and optically detected magnetic resonance investigations on porous silicon
|
Meyer, B.K.
|
|
1993
|
57 |
1-6 |
p. 137-140
4 p.
|
artikel
|
| 39 |
Photoluminescence of porous silicon
|
Pavesi, L.
|
|
1993
|
57 |
1-6 |
p. 131-135
5 p.
|
artikel
|
| 40 |
Porous silicon electroluminescent devices
|
Lang, W.
|
|
1993
|
57 |
1-6 |
p. 341-349
9 p.
|
artikel
|
| 41 |
Porous silicon light-emitting p-n junction
|
Lang, W.
|
|
1993
|
57 |
1-6 |
p. 169-173
5 p.
|
artikel
|
| 42 |
Preface
|
Vial, Jean-Claude
|
|
1993
|
57 |
1-6 |
p. vii-
1 p.
|
artikel
|
| 43 |
Preparation of porous silicon by spark erosion
|
Rüter, D.
|
|
1993
|
57 |
1-6 |
p. 19-23
5 p.
|
artikel
|
| 44 |
Properties of type II interfaces in semiconductor heterojunctions, application to porous silicon
|
Sacilotti, M.
|
|
1993
|
57 |
1-6 |
p. 33-37
5 p.
|
artikel
|
| 45 |
Quenching of porous silicon luminescence at intermediate temperatures
|
Kessener, Y.A.R.R.
|
|
1993
|
57 |
1-6 |
p. 77-81
5 p.
|
artikel
|
| 46 |
Radiation effects on porous silicon
|
Pivac, B.
|
|
1993
|
57 |
1-6 |
p. 227-229
3 p.
|
artikel
|
| 47 |
Room temperature photoluminescence of photoelectrochemically etched n-type Si
|
Galun, E.
|
|
1993
|
57 |
1-6 |
p. 125-129
5 p.
|
artikel
|
| 48 |
SAXS study of the influence of the porous silicon morphology on the photoluminescence efficiency
|
Goudeau, Ph.
|
|
1993
|
57 |
1-6 |
p. 141-145
5 p.
|
artikel
|
| 49 |
Spectroscopic identification of the luminescence mechanism of highly porous silicon
|
Calcott, P.D.J.
|
|
1993
|
57 |
1-6 |
p. 257-269
13 p.
|
artikel
|
| 50 |
Structural aspects of light emitting nc-Si prepared by plasma CVD
|
Rückschloss, M.
|
|
1993
|
57 |
1-6 |
p. 1-4
4 p.
|
artikel
|
| 51 |
Study of anodic oxidation of porous silicon: relation between growth and physical properties
|
Grosman, A.
|
|
1993
|
57 |
1-6 |
p. 13-18
6 p.
|
artikel
|
| 52 |
Subject index
|
|
|
1993
|
57 |
1-6 |
p. 355-
1 p.
|
artikel
|
| 53 |
Surface passivation: a critical parameter for the visible luminescence of electrooxidised porous silicon
|
Mihalcescu, I.
|
|
1993
|
57 |
1-6 |
p. 111-115
5 p.
|
artikel
|
| 54 |
Surface structure imaging, electronically induced modifications and electroluminescence of porous silicon by scanning tunneling microscopy
|
Enachescu, M.
|
|
1993
|
57 |
1-6 |
p. 191-196
6 p.
|
artikel
|
| 55 |
Temperature dependence of luminescence in porous silicon and related materials
|
Rosenbauer, M.
|
|
1993
|
57 |
1-6 |
p. 153-157
5 p.
|
artikel
|
| 56 |
The luminescence of porous Si: the case for the surface state mechanism
|
Koch, F.
|
|
1993
|
57 |
1-6 |
p. 271-281
11 p.
|
artikel
|
| 57 |
Theory of the luminescence of porous silicon
|
Delerue, C.
|
|
1993
|
57 |
1-6 |
p. 249-256
8 p.
|
artikel
|
| 58 |
The role of hydrogen in luminescence of electrochemically oxidized porous Si layer
|
Vázsonyi, Éva B.
|
|
1993
|
57 |
1-6 |
p. 121-124
4 p.
|
artikel
|
| 59 |
Time-resolved photoluminescence spectroscopy of porous silicon
|
Laiho, R.
|
|
1993
|
57 |
1-6 |
p. 89-93
5 p.
|
artikel
|
| 60 |
Transient photoluminescence decay in porous silicon and siloxene
|
Finkbeiner, S.
|
|
1993
|
57 |
1-6 |
p. 231-234
4 p.
|
artikel
|
| 61 |
Ultraviolet light from porous silicon by a microscopic discharge
|
Kozlowski, F.
|
|
1993
|
57 |
1-6 |
p. 185-189
5 p.
|
artikel
|
| 62 |
Visible light emission from Si materials
|
Steigmeier, E.F.
|
|
1993
|
57 |
1-6 |
p. 9-12
4 p.
|
artikel
|
| 63 |
X-ray investigation of porous silicon under angles of grazing incidence and exit
|
Metzger, H.
|
|
1993
|
57 |
1-6 |
p. 201-204
4 p.
|
artikel
|
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