| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absolute oscillator strengths of 5f-5f transitions of U4+ in ThBr4 and in hydrobromic acid solutions
|
Auzel, F.
|
|
1982
|
26 |
3 |
p. 251-262
12 p.
|
artikel
|
| 2 |
Anti-stokes Raman scattering from DODCI solutions
|
Fuh, Y.G.
|
|
1982
|
26 |
3 |
p. 329-336
8 p.
|
artikel
|
| 3 |
Effect of temperature on phosphorescence quenching in [Cr(NCS)6]-3
|
Strȩk, W.
|
|
1982
|
26 |
3 |
p. 263-271
9 p.
|
artikel
|
| 4 |
Luminescence investigation of the surface states of η-alumina. Correlation with the infra-red study of the evolution of the surface hydroxyl groups
|
Breysse, M.
|
|
1982
|
26 |
3 |
p. 239-250
12 p.
|
artikel
|
| 5 |
Luminescence of germanate garnets with terbium on dodecahedral and octahedral lattice sites
|
Avouris, Ph.
|
|
1982
|
26 |
3 |
p. 213-225
13 p.
|
artikel
|
| 6 |
Modeling a.c. thin-film electroluminescent devices
|
Smith, D.H.
|
|
1982
|
26 |
3 |
p. 346-
1 p.
|
artikel
|
| 7 |
On the 5D0→7F0 transition of the Eu3+ ion in the {(C4H9)4N}3Y(NCS)6 host
|
Malta, O.L.
|
|
1982
|
26 |
3 |
p. 337-343
7 p.
|
artikel
|
| 8 |
Orientation factor and rotation of molecules in luminescent solutions
|
Dudkiewicz, J.
|
|
1982
|
26 |
3 |
p. 273-280
8 p.
|
artikel
|
| 9 |
Radiation damage in single crystal L-Histidine as studied by low-temperature thermoluminescence techniques
|
Cooke, D.Wayne
|
|
1982
|
26 |
3 |
p. 319-328
10 p.
|
artikel
|
| 10 |
Radiationless intermolecular energy transfer with participation of acceptor excited triplet states
|
Gurinovich, G.P.
|
|
1982
|
26 |
3 |
p. 297-317
21 p.
|
artikel
|
| 11 |
Rare earth complex dopants in a.c. thin-film electroluminescent cells
|
Benoit, J.
|
|
1982
|
26 |
3 |
p. 345-
1 p.
|
artikel
|
| 12 |
Site induced structures in the lowest electronic transitions of naphthalene-H8 and -D8 in rare-gas matrices
|
Najbar, J.
|
|
1982
|
26 |
3 |
p. 281-295
15 p.
|
artikel
|
| 13 |
Vibronic spectrum of the U2 isoelectronic center in Si: In
|
Stahlbush, R.E.
|
|
1982
|
26 |
3 |
p. 227-232
6 p.
|
artikel
|
| 14 |
Zero-phonon transition of free electrons to bound holes in heavily gallium-doped silicon
|
Dai, R.
|
|
1982
|
26 |
3 |
p. 233-238
6 p.
|
artikel
|
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