| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition
|
Tsuji, Takahiro
|
|
2012
|
132 |
12 |
p. 3125-3128
4 p.
|
artikel
|
| 2 |
Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE
|
Wakahara, Akihiro
|
|
2012
|
132 |
12 |
p. 3113-3117
5 p.
|
artikel
|
| 3 |
Directing photophysics and structure in semiconductor nanowires with erbium and germanium
|
Huang, Xuezhen
|
|
2012
|
132 |
12 |
p. 3141-3147
7 p.
|
artikel
|
| 4 |
Editorial
|
|
|
2012
|
132 |
12 |
p. 3099-
1 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2012
|
132 |
12 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide
|
Liang, C.-H.
|
|
2012
|
132 |
12 |
p. 3118-3121
4 p.
|
artikel
|
| 7 |
Luminescent properties of MBE-grown Si:Er/SOI structures
|
Andreev, B.A.
|
|
2012
|
132 |
12 |
p. 3148-3150
3 p.
|
artikel
|
| 8 |
Observation of charge transfer process for optical emission of rare-earth dopant using electric probing technique
|
Ishii, M.
|
|
2012
|
132 |
12 |
p. 3129-3132
4 p.
|
artikel
|
| 9 |
Rare-earth doped III-nitride semiconductors for semiconductor spintronics
|
Asahi, Hajime
|
|
2012
|
132 |
12 |
p. 3136-3140
5 p.
|
artikel
|
| 10 |
Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide
|
Shah, Miraj
|
|
2012
|
132 |
12 |
p. 3103-3112
10 p.
|
artikel
|
| 11 |
Study of crystallization process of Eu doped SrGa2S4 thin film phosphors by two electron beams evaporation and 355nm Nd:YAG laser-annealing
|
Kominami, Hiroko
|
|
2012
|
132 |
12 |
p. 3100-3102
3 p.
|
artikel
|
| 12 |
Synthesis and characterization of light emitting Eu2O3 films on Si substrates
|
Bellocchi, G.
|
|
2012
|
132 |
12 |
p. 3133-3135
3 p.
|
artikel
|
| 13 |
The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared
|
Rebohle, L.
|
|
2012
|
132 |
12 |
p. 3151-3153
3 p.
|
artikel
|
| 14 |
Theoretical analysis of microdisk resonators based on Si/Si1−x Ge x :Er light-emitting structures
|
Yurasova, N.V.
|
|
2012
|
132 |
12 |
p. 3122-3124
3 p.
|
artikel
|
Tijdschrift beschrijving