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                             44 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analysis of structural defects in silicon-on-insulator layers with x-ray reflection topography Theunissen, M.J.J.
 1989
 97 3-4 p. 599-606
8 p.
 artikel
2 An integrated process model for the growth of oxide crystals by the Czochralski method Derby, J.J.
 1989
 97 3-4 p. 792-826
35 p.
 artikel
3 Author index 1989
 97 3-4 p. 868-872
5 p.
 artikel
4 Charge transfer in thunderstorms and the surface melting of ice Baker, M.B.
 1989
 97 3-4 p. 770-776
7 p.
 artikel
5 Chemical potentials of constituent compounds in III–V alloy semiconductors Ichimura, Masaya
 1989
 97 3-4 p. 542-550
9 p.
 artikel
6 Compensation mechanisms in n+-GaAs doped with sulphur Venkatasubramanian, R.
 1989
 97 3-4 p. 827-832
6 p.
 artikel
7 Computed results for the deposition rates and transport phenomena for an MOCVD system with a conical rotating substrate Dilawari, A.H.
 1989
 97 3-4 p. 777-791
15 p.
 artikel
8 Crystal growth and spectral characteristics of LaMgAl11−x O19:Ti x Xiaobo, Jiang
 1989
 97 3-4 p. 761-764
4 p.
 artikel
9 Crystal growth of Hg1−x Mn xTe by solid state recrystallization Mani, R.G.
 1989
 97 3-4 p. 617-621
5 p.
 artikel
10 Doping effect on the crystalline quality of NH4H2PO4 with chromium: Analysis of the lattice distortions Léon, S.
 1989
 97 3-4 p. 631-644
14 p.
 artikel
11 Eddy current responses of an encircling sensor in a Czochralski silicon crystal puller Choe, Kwang Su
 1989
 97 3-4 p. 622-630
9 p.
 artikel
12 Effect of hydrogen molecules on growth rates of GaAs in gas source molecular beam epitaxy Maruno, Shigemitsu
 1989
 97 3-4 p. 578-582
5 p.
 artikel
13 Effect of melt composition on Bi incorporation in iron garnets Fratello, V.J.
 1989
 97 3-4 p. 657-664
8 p.
 artikel
14 Effects of impurities on crystal growth in fructose crystallization Chu, Y.D.
 1989
 97 3-4 p. 689-696
8 p.
 artikel
15 Growth of β-barium borate from NaCl-Na2O solutions Gualtieri, D.M.
 1989
 97 3-4 p. 613-616
4 p.
 artikel
16 Growth of dipyramidal face of dislocation-free ADP crystals; free energy of steps Malkin, A.I.
 1989
 97 3-4 p. 765-769
5 p.
 artikel
17 Growth of n-type and p-type WSe2 crystals using SeCl4 transporter and their characterization Agarwal, M.K.
 1989
 97 3-4 p. 675-679
5 p.
 artikel
18 Incorporation and activation of group V elements in MOVPE-grown Cd x Hg1-x Te Capper, P.
 1989
 97 3-4 p. 833-844
12 p.
 artikel
19 InP growth from In solutions under reduced gravity Danilewsky, A.N.
 1989
 97 3-4 p. 571-577
7 p.
 artikel
20 Instruction to authors 1989
 97 3-4 p. 877-
1 p.
 artikel
21 Low-temperature heteroepitaxial growth of Si on Sapphire by disilane gas-source molecular beam epitaxy Sawada, Kazuaki
 1989
 97 3-4 p. 587-590
4 p.
 artikel
22 Melt growth of high purity cadmium bromide single crystals Singh, Kulvinder
 1989
 97 3-4 p. 863-865
3 p.
 artikel
23 Modelling melt-solid interfaces in bridgman growth Barber, Patrick G.
 1989
 97 3-4 p. 672-674
3 p.
 artikel
24 Modelling of the growth of GaAs by the LEC technique Meduoye, G.O.
 1989
 97 3-4 p. 709-719
11 p.
 artikel
25 Modelling of the growth of GaAs by the LEC technique Crowley, A.B.
 1989
 97 3-4 p. 697-708
12 p.
 artikel
26 Morphology and formation process of diamond from glassy carbon Miyamoto, Manabu
 1989
 97 3-4 p. 731-738
8 p.
 artikel
27 News, reports and announcements 1989
 97 3-4 p. 866-867
2 p.
 artikel
28 On the behavior of mercuric iodide around its melting point Toubektsis, S.N.
 1989
 97 3-4 p. 860-862
3 p.
 artikel
29 Optical second harmonic generation as an in-situ surface diagnostic probe of semiconductor growth processes Buhaenko, D.S.
 1989
 97 3-4 p. 595-598
4 p.
 artikel
30 Optimizing zone refining Rodway, G.H.
 1989
 97 3-4 p. 680-688
9 p.
 artikel
31 Photoluminescence microscopy on InP substrates and GaInAs epilayers grown by MOVPE Zhongming, Wang
 1989
 97 3-4 p. 560-570
11 p.
 artikel
32 Precipitates in a (Ga,In)P:Er crystal Jasioλek, Gabriel
 1989
 97 3-4 p. 583-586
4 p.
 artikel
33 Rapid precipitation of apatite from ethanol-water solution Lerner, Eyal
 1989
 97 3-4 p. 725-730
6 p.
 artikel
34 Simulations of two-dimensional recirculating flow effects in horizontal MOVPE Field, R.Jett
 1989
 97 3-4 p. 739-760
22 p.
 artikel
35 Single crystal growth of (Dy1−x Gd x)3Al5O12 and (Dy1−x−yGdxYy)3Al5O12 garnets Kimura, Hideo
 1989
 97 3-4 p. 607-612
6 p.
 artikel
36 Single crystal growth of p-doped CdSiAs2 Kimmel, M.
 1989
 97 3-4 p. 665-671
7 p.
 artikel
37 Solute redistribution in dendritic solidification with diffusion in the solid Ganesan, S.
 1989
 97 3-4 p. 851-859
9 p.
 artikel
38 Solvents and x-ray crystallography Van Der Sluis, P.
 1989
 97 3-4 p. 645-656
12 p.
 artikel
39 Studies on flux systems for the single crystal growth of β-BaB2O4 Qingzhen, Huang
 1989
 97 3-4 p. 720-724
5 p.
 artikel
40 Subject index 1989
 97 3-4 p. 873-876
4 p.
 artikel
41 Temperature lowering program for homogeneous doping in flux growth Qiwei, Wang
 1989
 97 3-4 p. 845-850
6 p.
 artikel
42 The composition dependence of GaInAs grown by organometallic epitaxy Agnello, Paul D.
 1989
 97 3-4 p. 551-559
9 p.
 artikel
43 The growth of CdS and CdSe alloys by MOCVD using a new dimethylcadmium adduct Jones, A.C.
 1989
 97 3-4 p. 537-541
5 p.
 artikel
44 The interaction of H2 with GaAs (100) surfaces: A model study of movpe substrate preparation Buhaenko, D.S.
 1989
 97 3-4 p. 591-594
4 p.
 artikel
                             44 gevonden resultaten
 
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