| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adducts in MOVPE of IIIȁV compounds
|
Moss, R.H.
|
|
|
65 |
1-3 |
p. 463
|
artikel
|
| 2 |
Advanced multilayer epitaxial structures
|
Shaw, Don W.
|
|
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65 |
1-3 |
p. 444-453
|
artikel
|
| 3 |
A modified horizontal gradient-freeze technique for growth of dislocation-free Si-doped GaAs single crystals
|
Peigen, Mo
|
|
|
65 |
1-3 |
p. 243-248
|
artikel
|
| 4 |
A numerical model of selective meltback morphology on InP
|
Pak, K.
|
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65 |
1-3 |
p. 602-606
|
artikel
|
| 5 |
Apparent re-entrant corner effect upon the morphologies of twinned crystals; A case study of quartz twinned according to Japanese twin law
|
Sunagawa, I.
|
|
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65 |
1-3 |
p. 43-49
|
artikel
|
| 6 |
Artificial epitaxy (graphoepitaxy) of semiconductors
|
Givargizov, E.I.
|
|
|
65 |
1-3 |
p. 339-342
|
artikel
|
| 7 |
Assessment of epitaxial layers by automated scanning double axis diffractometry
|
Halliwell, M.A.G.
|
|
|
65 |
1-3 |
p. 672-678
|
artikel
|
| 8 |
A study of transport and pyrolysis in the growth of Cd x Hg1ȡx Te by MOVPE
|
Irvine, S.J.C.
|
|
|
65 |
1-3 |
p. 479-484
|
artikel
|
| 9 |
Author index
|
|
|
|
65 |
1-3 |
p. 713-717
|
artikel
|
| 10 |
Automatic Czochralski growth, growth parameter measurements and process control
|
Uelhoff, W.
|
|
|
65 |
1-3 |
p. 278-279
|
artikel
|
| 11 |
Behavior of macrosteps and grooves during LPE growth as observed by photoluminescence images
|
Nishinaga, T.
|
|
|
65 |
1-3 |
p. 607-610
|
artikel
|
| 12 |
Calculation of the temperature distribution in a system of three copper plates during crystal growth by the Bridgman method
|
Modrzejewski, A.
|
|
|
65 |
1-3 |
p. 699-707
|
artikel
|
| 13 |
Characterization of crystals by γ-ray and neutron diffraction methods
|
Schneider, Jochen R.
|
|
|
65 |
1-3 |
p. 660-671
|
artikel
|
| 14 |
Comparison of growth characteristics of sapphire and silicon ribbon produced by EFG
|
Kalejs, J.P.
|
|
|
65 |
1-3 |
p. 316-323
|
artikel
|
| 15 |
Convective transport in melt growth systems
|
Hurle, D.T.J.
|
|
|
65 |
1-3 |
p. 124-132
|
artikel
|
| 16 |
Convective transport in vapor growth systems
|
Westphal, G.H.
|
|
|
65 |
1-3 |
p. 105-123
|
artikel
|
| 17 |
Crucible-free methods of growing crystals from the melt
|
Osiko, V.V.
|
|
|
65 |
1-3 |
p. 235-236
|
artikel
|
| 18 |
Crystal growth and applications of mercuric iodide
|
Schieber, M.
|
|
|
65 |
1-3 |
p. 353-364
|
artikel
|
| 19 |
Crystal growth and characterization of a perovskite derived ferroelectric compound: (Nd4Ca 2)Ti6O20
|
Ostorero, J.
|
|
|
65 |
1-3 |
p. 576-579
|
artikel
|
| 20 |
Crystal growth of some rare earth and uranium intermetallics from the melt
|
Menovsky, A.
|
|
|
65 |
1-3 |
p. 286-292
|
artikel
|
| 21 |
Crystal growth progress in response to the needs for optical communications
|
Laudise, R.A.
|
|
|
65 |
1-3 |
p. 3-23
|
artikel
|
| 22 |
Crystallization during iso-chronal annealing of vacuum-deposited amorphous films of antimony
|
Maki, K.
|
|
|
65 |
1-3 |
p. 77-83
|
artikel
|
| 23 |
Czochralski growth by the double container technique
|
Mateika, D.
|
|
|
65 |
1-3 |
p. 237-242
|
artikel
|
| 24 |
Czochralski growth of silicon
|
Zulehner, W.
|
|
|
65 |
1-3 |
p. 189-213
|
artikel
|
| 25 |
Determination of organic phase diagrams by the DSC method
|
Radomski, R.
|
|
|
65 |
1-3 |
p. 509-510
|
artikel
|
| 26 |
Direct microscopic observation of Oswald ripening along a faceted bridge for the layer perovskite (C3H7NH3)2CuCl4 in aqueous solution
|
Mischgofsky, F.H.
|
|
|
65 |
1-3 |
p. 500-505
|
artikel
|
| 27 |
Dislocation configurations in single crystals of pentaerythritol tetranitrate and cyclotrimethylene trinitramine
|
Halfpenny, P.J.
|
|
|
65 |
1-3 |
p. 524-529
|
artikel
|
| 28 |
Editorial Board
|
|
|
|
65 |
1-3 |
p. ii
|
artikel
|
| 29 |
Editors' preface
|
|
|
|
65 |
1-3 |
p. xi
|
artikel
|
| 30 |
Effects of trivalent rare-earth ions upon the morphology of corundum crystals
|
Watanabe, K.
|
|
|
65 |
1-3 |
p. 568-575
|
artikel
|
| 31 |
EFG silicon sheet growth in production
|
Taylor, A.S.
|
|
|
65 |
1-3 |
p. 314-315
|
artikel
|
| 32 |
Electron microscopic study on new phases of BaMnO3ȡx formed by electron irradiation
|
Shibahara, H.
|
|
|
65 |
1-3 |
p. 683-687
|
artikel
|
| 33 |
Epitaxial growth of Ge on GaAs substrates
|
Kräutle, H.
|
|
|
65 |
1-3 |
p. 439-443
|
artikel
|
| 34 |
Experiments on buoyant, thermocapillary, and forced convection in Czochralski configuration
|
Lamprecht, R.
|
|
|
65 |
1-3 |
p. 143-152
|
artikel
|
| 35 |
Finite-element simulation of Czochralski bulk flow
|
Crochet, M.J.
|
|
|
65 |
1-3 |
p. 153-165
|
artikel
|
| 36 |
Graphoepitaxy and zone-melting recrystallization of patterned films
|
Smith, Henry I.
|
|
|
65 |
1-3 |
p. 337-338
|
artikel
|
| 37 |
Growth and characterization of the complete Cd1- x Zn x Te alloy series
|
Triboulet, R.
|
|
|
65 |
1-3 |
p. 262-269
|
artikel
|
| 38 |
Growth by CVT and characterization of Hg1ȡx Cd x Te Layers
|
Wiedemeier, Heribert
|
|
|
65 |
1-3 |
p. 474-478
|
artikel
|
| 39 |
Growth characteristics of p-terphenyl crystals from some organic solvents
|
Borecka, B.
|
|
|
65 |
1-3 |
p. 518-523
|
artikel
|
| 40 |
Growth conditions and characterization of Y2(Co,M)17 single crystal compounds
|
Ślepowroński, M.
|
|
|
65 |
1-3 |
p. 293-298
|
artikel
|
| 41 |
Growth mechanism and growth form of β-Ag2S whiskers
|
Kasukabe, Susumu
|
|
|
65 |
1-3 |
p. 384-390
|
artikel
|
| 42 |
Growth mechanisms of single ice crystals growing at a low temperature and their morphological stability
|
Gonda, T.
|
|
|
65 |
1-3 |
p. 36-42
|
artikel
|
| 43 |
Growth of ammonium dihydrogen phosphate microcrystals under nonstationary conditions
|
Boz˛in, S.E.
|
|
|
65 |
1-3 |
p. 487-493
|
artikel
|
| 44 |
Growth of compound semiconductor photovoltaic materials
|
Bachmann, Klaus J.
|
|
|
65 |
1-3 |
p. 464-473
|
artikel
|
| 45 |
Growth of α-mercury iodide crystals and study of space charge relaxation in an applied electric field
|
Gospodinov, Marin
|
|
|
65 |
1-3 |
p. 365-369
|
artikel
|
| 46 |
Growth of Nb3Sn crystals by top seeded solution growth
|
Inoue, T.
|
|
|
65 |
1-3 |
p. 580-584
|
artikel
|
| 47 |
Growth of rare earth garnet crystals by the floating zone method
|
Kimura, S.
|
|
|
65 |
1-3 |
p. 543-548
|
artikel
|
| 48 |
Growth of seeded and unseeded yttrium garnet crystals from high temperature solutions studied by induced striations
|
Tolksdorf, W.
|
|
|
65 |
1-3 |
p. 549-555
|
artikel
|
| 49 |
Growth, properties and applications of HgCdTe
|
Schmit, J.L.
|
|
|
65 |
1-3 |
p. 249-261
|
artikel
|
| 50 |
Growth, properties and technical applications of mercurous halide crystals
|
Barta, C˛.
|
|
|
65 |
1-3 |
p. 351-352
|
artikel
|
| 51 |
High-resolution electron microscopy of structural defects in organic crystals
|
Kobayashi, Takashi
|
|
|
65 |
1-3 |
p. 511-517
|
artikel
|
| 52 |
Immiscibility and spinodal decomposition in III/V alloys
|
Stringfellow, G.B.
|
|
|
65 |
1-3 |
p. 454-462
|
artikel
|
| 53 |
Influence of convection on the growth of crystals from solution
|
Wilcox, William R.
|
|
|
65 |
1-3 |
p. 133-142
|
artikel
|
| 54 |
Influence of cooling rate on convection during LPE growth of GaAs and (Ga,Al)As
|
König, U.
|
|
|
65 |
1-3 |
p. 588-595
|
artikel
|
| 55 |
Interfacial transport in crystal growth, a parametric comparison of convective effects
|
Rosenberger, Franz
|
|
|
65 |
1-3 |
p. 91-104
|
artikel
|
| 56 |
Kinetic equations for normal growth of crystals near the equilibrium
|
Kuzovkov, V.N.
|
|
|
65 |
1-3 |
p. 55-58
|
artikel
|
| 57 |
Large grain growth, morphological and electrical characterization of CuInSe2 sintered compounds
|
Gombia, E.
|
|
|
65 |
1-3 |
p. 270-277
|
artikel
|
| 58 |
Large-grain silicon sheets by the improved spinning method
|
Maeda, Yasuhiro
|
|
|
65 |
1-3 |
p. 331-334
|
artikel
|
| 59 |
Laser-enhanced crystallization of Ge and Si
|
Wautelet, M.
|
|
|
65 |
1-3 |
p. 231-234
|
artikel
|
| 60 |
Layered interfaces
|
MÜller-Krumbhaar, H.
|
|
|
65 |
1-3 |
p. 59
|
artikel
|
| 61 |
Liquid phase epitaxial growth of (Ga,Al)As/GaAs double heterostructures under controlled arsenic vapour pressure
|
Novotný, J.
|
|
|
65 |
1-3 |
p. 596-601
|
artikel
|
| 62 |
Microscopic studies of dislocation-controlled facet growth
|
Strunk, H.
|
|
|
65 |
1-3 |
p. 587
|
artikel
|
| 63 |
Microstructure of metallic solid solutions
|
Kostorz, G.
|
|
|
65 |
1-3 |
p. 688-690
|
artikel
|
| 64 |
Modeling thermal stress effects in silicon web growth
|
Hopkins, R.H.
|
|
|
65 |
1-3 |
p. 307-313
|
artikel
|
| 65 |
Near equilibrium growth of silicon by CVD II. The Si-I-H system
|
Hanssen, J.H.L.
|
|
|
65 |
1-3 |
p. 406-410
|
artikel
|
| 66 |
Near equilibrium growth of silicon by CVD I. The Si-Cl-H system
|
Bloem, J.
|
|
|
65 |
1-3 |
p. 399-405
|
artikel
|
| 67 |
Neutron investigations of micromosaics in as-grown copper single crystal plates
|
Modrzejewski, A.
|
|
|
65 |
1-3 |
p. 691-698
|
artikel
|
| 68 |
Numerical simulation of the horizontal Bridgman growth of a gallium arsenide crystal
|
Crochet, M.J.
|
|
|
65 |
1-3 |
p. 166-172
|
artikel
|
| 69 |
Oxide solid solutions, crystal growth and applications
|
Scheel, H.J.
|
|
|
65 |
1-3 |
p. 541-542
|
artikel
|
| 70 |
Plastic deformation influence on stress generated during silicon sheet growth at high speeds
|
Lambropoulos, J.C.
|
|
|
65 |
1-3 |
p. 324-330
|
artikel
|
| 71 |
Polarity in CdTe single crystals grown from the vapor phase
|
Zhao, S.N.
|
|
|
65 |
1-3 |
p. 370-378
|
artikel
|
| 72 |
Preface
|
|
|
|
65 |
1-3 |
p. xii-xiii
|
artikel
|
| 73 |
Progress in molecular mechanisms of crystals growth
|
Mutaftschiev, Boyan
|
|
|
65 |
1-3 |
p. 50-54
|
artikel
|
| 74 |
Recent developments in theory and experiment of growth kinetics of ice crystals from the vapour phase and their growth forms
|
Kuroda, T.
|
|
|
65 |
1-3 |
p. 27-35
|
artikel
|
| 75 |
Report on IOCG Council and general assembly meeting held at ICCG-7 in Stuttgart, September 13 and 14, 1983
|
|
|
|
65 |
1-3 |
p. 709-711
|
artikel
|
| 76 |
Roughening transition for the ionic-electronic mixed superionic conductor α-Ag2S
|
Ohachi, T.
|
|
|
65 |
1-3 |
p. 84-88
|
artikel
|
| 77 |
Scanning tunneling microscopy on crystal surfaces
|
Binnig, G.
|
|
|
65 |
1-3 |
p. 679-680
|
artikel
|
| 78 |
Silicon crystal films orientated by metal patterns of planar amorphous substrates
|
Mori, H.
|
|
|
65 |
1-3 |
p. 343-347
|
artikel
|
| 79 |
Simulation studies of the hydrodynamics in high-temperature solutions for crystal growth by the TSSG method
|
Peshev, P.
|
|
|
65 |
1-3 |
p. 173-186
|
artikel
|
| 80 |
Solid state reactions for the epitaxial growth of spinel films
|
Hesse, D.
|
|
|
65 |
1-3 |
p. 69-76
|
artikel
|
| 81 |
Some features of macrospiral layers and macrosteps on potassium bichromate crystals grown from aqueous solutions
|
Rak, M.
|
|
|
65 |
1-3 |
p. 494-499
|
artikel
|
| 82 |
Structure and morphology of CdS thin films electrodeposited in fused salts
|
Markov, I.
|
|
|
65 |
1-3 |
p. 611-617
|
artikel
|
| 83 |
Subject index
|
|
|
|
65 |
1-3 |
p. 718-721
|
artikel
|
| 84 |
Surface morphology of polycrystalline silicon films formed by chemical vapour deposition
|
Beers, A.M.
|
|
|
65 |
1-3 |
p. 411-414
|
artikel
|
| 85 |
TEM observations of grain boundaries in silicon
|
Rocher, André
|
|
|
65 |
1-3 |
p. 681-682
|
artikel
|
| 86 |
Temperature gradient and growth velocity effects on the irregular monotectic structure
|
Derby, B.
|
|
|
65 |
1-3 |
p. 280-285
|
artikel
|
| 87 |
The characterization of CVD single-crystal silicon on insulators: Heteroepitaxy and epitaxial lateral overgrowth
|
Cullen, G.W.
|
|
|
65 |
1-3 |
p. 415-438
|
artikel
|
| 88 |
The dissolution forms of YIG single crystal spheres
|
Beregi, E.
|
|
|
65 |
1-3 |
p. 562-567
|
artikel
|
| 89 |
The Green function approach to several problems in crystal growth
|
Van Der Eerden, J.P.
|
|
|
65 |
1-3 |
p. 60-67
|
artikel
|
| 90 |
The influence of excess iron oxide on the solubility of yttrium iron garnet and its growth kinetics on (111) substrates
|
Klages, C.-P.
|
|
|
65 |
1-3 |
p. 556-561
|
artikel
|
| 91 |
The influence of the mutual interaction of alloying elements on microsegregation
|
Sˇittner, M.
|
|
|
65 |
1-3 |
p. 299-304
|
artikel
|
| 92 |
The precipitation of oxygen in silicon
|
Wilkes, J.G.
|
|
|
65 |
1-3 |
p. 214-230
|
artikel
|
| 93 |
The present status of flux growth
|
Wanklyn, B.M.
|
|
|
65 |
1-3 |
p. 533-540
|
artikel
|
| 94 |
The surface of helium crystals
|
Lipson, S.G.
|
|
|
65 |
1-3 |
p. 68
|
artikel
|
| 95 |
Topographic studies of growth defects using synchrotron radiation
|
Robert, M.C.
|
|
|
65 |
1-3 |
p. 637-650
|
artikel
|
| 96 |
Vapor growth, thermodynamical study and characterization of CuInTe2 and CuGaTe2 single crystals
|
Gombia, E.
|
|
|
65 |
1-3 |
p. 391-396
|
artikel
|
| 97 |
Vapor-melt-solid mechanism of Pb1ȡx Sn x Te single crystal growth
|
Kinoshita, K.
|
|
|
65 |
1-3 |
p. 379-383
|
artikel
|
| 98 |
X-ray topographic investigations of phase transitions in crystals
|
Klapper, H.
|
|
|
65 |
1-3 |
p. 621-636
|
artikel
|
| 99 |
X-ray topography of laser-induced damage in potassium dihydrogen phosphate crystals
|
Newkirk, H.
|
|
|
65 |
1-3 |
p. 651-659
|
artikel
|
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