| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A DLTS study of electron irradiated InP
|
Tapster, P.R.
|
|
1983
|
64 |
1 |
p. 200-205
6 p.
|
artikel
|
| 2 |
Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxy
|
Massies, J.
|
|
1983
|
64 |
1 |
p. 101-107
7 p.
|
artikel
|
| 3 |
Compensating aspects of implantation damage in InP
|
Eirug Davies, D.
|
|
1983
|
64 |
1 |
p. 181-185
5 p.
|
artikel
|
| 4 |
Control of dislocation structures in LEC single crystal InP
|
Cockayne, B.
|
|
1983
|
64 |
1 |
p. 48-54
7 p.
|
artikel
|
| 5 |
Defect centers in high purity hydride VPE indium phosphide
|
Sun, S.W.
|
|
1983
|
64 |
1 |
p. 149-157
9 p.
|
artikel
|
| 6 |
Diffusion of Cd in InP and In0.53Ga0.47As
|
Aytaç, S.
|
|
1983
|
64 |
1 |
p. 169-173
5 p.
|
artikel
|
| 7 |
Dopant inhomogeneity in Czochralski-grown indium phosphide ingots doped with germanium
|
Warwick, C.A.
|
|
1983
|
64 |
1 |
p. 108-114
7 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
1983
|
64 |
1 |
p. vi-
1 p.
|
artikel
|
| 9 |
Effects of annealing on unintentionally doped LEC InP
|
Paris, J.C.
|
|
1983
|
64 |
1 |
p. 137-141
5 p.
|
artikel
|
| 10 |
Electron irradiation defects in InP
|
Sibille, A.
|
|
1983
|
64 |
1 |
p. 194-199
6 p.
|
artikel
|
| 11 |
Evidence of amphoteric behavior of Si in VPE InP
|
Pomrenke, Gernot S.
|
|
1983
|
64 |
1 |
p. 158-164
7 p.
|
artikel
|
| 12 |
Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure
|
Razeghi, M.
|
|
1983
|
64 |
1 |
p. 76-82
7 p.
|
artikel
|
| 13 |
Growth of indium phosphide from indium rich melts
|
Grant, I.
|
|
1983
|
64 |
1 |
p. 32-36
5 p.
|
artikel
|
| 14 |
Improved mobility in InxGa1−xAsyP1−y alloys using high temperature liquid phase epitaxy
|
Benchimol, J.L.
|
|
1983
|
64 |
1 |
p. 96-100
5 p.
|
artikel
|
| 15 |
Indium phosphide chloride vapour phase epitaxy — A re-appraisal
|
Giles, P.L.
|
|
1983
|
64 |
1 |
p. 60-67
8 p.
|
artikel
|
| 16 |
LPE growth and characterization of InP photodiodes
|
Groves, S.H.
|
|
1983
|
64 |
1 |
p. 83-89
7 p.
|
artikel
|
| 17 |
Metal organic vapour phase epitaxy of indium phosphide
|
Bass, S.J.
|
|
1983
|
64 |
1 |
p. 68-75
8 p.
|
artikel
|
| 18 |
Microstructure of grappe defects in InP
|
Augustus, P.D.
|
|
1983
|
64 |
1 |
p. 121-128
8 p.
|
artikel
|
| 19 |
Optical characterisation of acceptors in doped and undoped VPE InP
|
Pickering, C.
|
|
1983
|
64 |
1 |
p. 142-148
7 p.
|
artikel
|
| 20 |
Precipitate identification in co-doped InP
|
Harris, I.R.
|
|
1983
|
64 |
1 |
p. 115-120
6 p.
|
artikel
|
| 21 |
Preface
|
Cockayne, B.
|
|
1983
|
64 |
1 |
p. vii-
1 p.
|
artikel
|
| 22 |
Preparation and characterization of high purity bulk InP
|
Bonner, W.A.
|
|
1983
|
64 |
1 |
p. 10-14
5 p.
|
artikel
|
| 23 |
Rare earth activated luminescence in InP, GaP and GaAs
|
Ennen, H.
|
|
1983
|
64 |
1 |
p. 165-168
4 p.
|
artikel
|
| 24 |
Semi-insulating In0.53Ga0.47As by Fe doping
|
Clawson, A.R.
|
|
1983
|
64 |
1 |
p. 90-95
6 p.
|
artikel
|
| 25 |
Silicon implantation in semi-insulating bulk InP; Electrical and photoluminescence measurements
|
Duhamel, N.
|
|
1983
|
64 |
1 |
p. 186-193
8 p.
|
artikel
|
| 26 |
Sources of silicon contamination in LEC-grown InP crystals
|
Müller, G.
|
|
1983
|
64 |
1 |
p. 37-39
3 p.
|
artikel
|
| 27 |
Synthesis, crystal growth and characterization of InP
|
Coquille, R.
|
|
1983
|
64 |
1 |
p. 23-31
9 p.
|
artikel
|
| 28 |
Synthesis of indium phosphide
|
Adamski, Joseph A.
|
|
1983
|
64 |
1 |
p. 1-9
9 p.
|
artikel
|
| 29 |
The effect of annealing on structural defects in bulk InP
|
Brown, G.T.
|
|
1983
|
64 |
1 |
p. 129-136
8 p.
|
artikel
|
| 30 |
The growth of ultra-pure InP by vapour phase epitaxy
|
Taylor, L.L.
|
|
1983
|
64 |
1 |
p. 55-59
5 p.
|
artikel
|
| 31 |
The preparation and assessment of indium phosphide
|
Wardill, J.E.
|
|
1983
|
64 |
1 |
p. 15-22
8 p.
|
artikel
|
| 32 |
Thermal analysis of LEC InP growth
|
Müller, G.
|
|
1983
|
64 |
1 |
p. 40-47
8 p.
|
artikel
|
| 33 |
Transient annealing of ion implanted indium phosphide
|
Gill, Sukhdev S.
|
|
1983
|
64 |
1 |
p. 174-180
7 p.
|
artikel
|
Tijdschrift beschrijving