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                             15 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Adsorption properties of Al, Ga, and N related particles on GaN substrate surface by first principle calculations Zhang, Libin

598 C p.
artikel
2 A study on the electrical properties of flux grown 0.91PZN-0.09PT single crystals for high-performance piezoelectric and pyroelectric device applications Maria Kuruvila, Krupa

598 C p.
artikel
3 Direct precipitation of multilayer graphene on c-plane sapphire using a crystallized Ni catalyst Nakashima, Asato

598 C p.
artikel
4 Editorial Board
598 C p.
artikel
5 Effect of crucible location on heat transfer in GaN crystal growth using Na flux method Luo, Jinping

598 C p.
artikel
6 Effect of trace sodium polystyrene sulfonate on the solubility, nucleation and crystallization of thiourea from metastable zone width data Tegladza, Isaac D.

598 C p.
artikel
7 Exploration of process optimization for recovery of sodium and ammonium sulfate crystals from vanadium precipitation wastewater Jitian, Song

598 C p.
artikel
8 Inhibition of crystallization of calcium oxalate monohydrate using leaves from different species of Moringa – Experimental and theoretical studies Menon, Sindhu

598 C p.
artikel
9 Mechanism of chirality conversion of crystals by Viedma ripening and temperature cycling Uwaha, Makio

598 C p.
artikel
10 Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD Brown, Richard

598 C p.
artikel
11 Molecular dynamics simulation on the crystal morphology of β-HMX affected by binary and ternary solvent systems Cheng, Yuanfang

598 C p.
artikel
12 Nonequilibrium capture of impurities that completely block kinks during crystal growth Darkins, Robert

598 C p.
artikel
13 Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy Su, Zhaole

598 C p.
artikel
14 Struvite-K crystal growth inhibition by citric acid: Formation of complexes in solution and surface adsorption effects Viani, Alberto

598 C p.
artikel
15 Threading dislocation increase in the initial stage of growth of nitrogen and boron co-doped 4H-SiC by physical vapor transport Suo, H.

598 C p.
artikel
                             15 gevonden resultaten
 
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