nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Editorial Board
|
|
|
|
592 |
C |
p. |
artikel |
2 |
Effect of hyaluronic acid on the struvite crystallization: A structural, morphological, and thermal analysis study
|
Polat, Sevgi |
|
|
592 |
C |
p. |
artikel |
3 |
Growth and characterization of Na3La9O3(BO3)8 crystal in the improved flux system
|
Liu, Wang |
|
|
592 |
C |
p. |
artikel |
4 |
Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE
|
Di Li, Di |
|
|
592 |
C |
p. |
artikel |
5 |
Low areal densities of InAs quantum dots on GaAs(100) prepared by molecular beam epitaxy
|
Verma, A.K. |
|
|
592 |
C |
p. |
artikel |
6 |
Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire
|
Chou, Ta-Shun |
|
|
592 |
C |
p. |
artikel |
7 |
Modified crystal habits of glimepiride to improve manufacturing processability
|
Datir, Satyajit R. |
|
|
592 |
C |
p. |
artikel |
8 |
Molecular beam epitaxy and polarized excitonic emission of layered GaTe/GaAs thin films
|
Avdienko, P.S. |
|
|
592 |
C |
p. |
artikel |
9 |
Molecular dynamics determination of Two-dimensional nucleation kinetic coefficient for modeling the faceted growth of Si (111) from an undercooled melt
|
Fabiyi, Victor A. |
|
|
592 |
C |
p. |
artikel |
10 |
Observation of threading dislocations with a c + m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM
|
Yao, Yongzhao |
|
|
592 |
C |
p. |
artikel |
11 |
Quality improvement of multi-crystalline silicon ingot by the Hot-Zone modification
|
Gurusamy, Aravindan |
|
|
592 |
C |
p. |
artikel |
12 |
Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 ℃ environment
|
Lei, Cheng |
|
|
592 |
C |
p. |
artikel |
13 |
Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
|
Ohnishi, Kazuki |
|
|
592 |
C |
p. |
artikel |
14 |
The impact of feedstock size and composition on the hydrothermal growth of (U,Th)O2
|
Rickert, Karl |
|
|
592 |
C |
p. |
artikel |
15 |
Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality
|
Nakajima, Kazuo |
|
|
592 |
C |
p. |
artikel |