| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel crystal growth method for GaAs: The liquid encapsulated kyropoulos method
|
Jacob, G.
|
|
1982
|
58 |
2 |
p. 455-459
5 p.
|
artikel
|
| 2 |
Chemical vapor deposition: Numerical models applied to transport of Ge by GeI4 and GeI2
|
Launay, J.C.
|
|
1982
|
58 |
2 |
p. 354-364
11 p.
|
artikel
|
| 3 |
Defects in PbTe single crystals
|
Breschi, R.
|
|
1982
|
58 |
2 |
p. 399-408
10 p.
|
artikel
|
| 4 |
Determination of the height of small metal particles vapour-deposited onto crystalline substrates
|
Panov, A.
|
|
1982
|
58 |
2 |
p. 452-454
3 p.
|
artikel
|
| 5 |
Effect of heat transfer on melt/solid interface shape and solute segregation in edge-defined film-fed growth: Finite element analysis
|
Ettouney, Hisham M.
|
|
1982
|
58 |
2 |
p. 313-329
17 p.
|
artikel
|
| 6 |
Epitaxial growth of CdS and CdS1−y Se y thin films by hydrogen transport from the elements and their photoluminescent properties
|
Claybourn, Michael
|
|
1982
|
58 |
2 |
p. 417-424
8 p.
|
artikel
|
| 7 |
Flux growth of MNb2O6 (M = Mg, Zn, Ba) single crystals
|
Greenblatt, M.
|
|
1982
|
58 |
2 |
p. 463-466
4 p.
|
artikel
|
| 8 |
Habit modification of succinic acid crystals grown from different solvents
|
Davey, R.J.
|
|
1982
|
58 |
2 |
p. 304-312
9 p.
|
artikel
|
| 9 |
In situ etching of GaAs using AsCl3 in MOVPE. I
|
El Jani, Belgacem
|
|
1982
|
58 |
2 |
p. 381-386
6 p.
|
artikel
|
| 10 |
Interface kinetics of the growth and evaporation of ice single crystals from the vapour phase
|
Beckmann, W.
|
|
1982
|
58 |
2 |
p. 443-451
9 p.
|
artikel
|
| 11 |
Interface kinetics of the growth and evaporation of ice single crystals from the vapour phase
|
Beckmann, W.
|
|
1982
|
58 |
2 |
p. 425-432
8 p.
|
artikel
|
| 12 |
Interface kinetics of the growth and evaporation of ice single crystals from the vapour phase
|
Beckmann, W.
|
|
1982
|
58 |
2 |
p. 433-442
10 p.
|
artikel
|
| 13 |
International conference on charged particles — Management of electrostatic hazards and problems
|
|
|
1982
|
58 |
2 |
p. 472-
1 p.
|
artikel
|
| 14 |
Lattice structure in Ni-Si coevaporated films
|
Harrison, Thomas R.
|
|
1982
|
58 |
2 |
p. 460-462
3 p.
|
artikel
|
| 15 |
Light-microscopic and electronmicroscopic investigations of whisker-like AgCl crystals grown from the vapour phase
|
Stuckenschmidt, E.
|
|
1982
|
58 |
2 |
p. 330-334
5 p.
|
artikel
|
| 16 |
LPE growth on structured {100} InP substrates and their fabrication by preferential etching
|
Turley, S.E.H.
|
|
1982
|
58 |
2 |
p. 409-416
8 p.
|
artikel
|
| 17 |
Observations of growth hillocks on potassium bichromate (KBC) crystals grown from aqueous solutions
|
Sangwal, K.
|
|
1982
|
58 |
2 |
p. 467-471
5 p.
|
artikel
|
| 18 |
Phase determinations and crystal growth of Pb2KNb5O15 (PKN)
|
Kramer, W.E.
|
|
1982
|
58 |
2 |
p. 393-398
6 p.
|
artikel
|
| 19 |
Processes in surface formation of HCl gas-phase etched germanium
|
Däweritz, L.
|
|
1982
|
58 |
2 |
p. 339-346
8 p.
|
artikel
|
| 20 |
Quantitative measurements on the morphology of a NH4Br dendritic crystal growth in a capillary
|
Honjo, Haruo
|
|
1982
|
58 |
2 |
p. 297-303
7 p.
|
artikel
|
| 21 |
Surface topography of HCl gas-phase etched germanium
|
Däweritz, L.
|
|
1982
|
58 |
2 |
p. 347-353
7 p.
|
artikel
|
| 22 |
The derivation of equilibrium constants from LPE and VPE growth data for (Ga, In) As; an approach to the determination of solid activity coefficients
|
Faktor, M.M.
|
|
1982
|
58 |
2 |
p. 291-296
6 p.
|
artikel
|
| 23 |
The effect of growth temperature and impurity doping on composition of LPE InGaAsP on InP
|
Kusunoki, Toshihiro
|
|
1982
|
58 |
2 |
p. 387-392
6 p.
|
artikel
|
| 24 |
The influence of stress on spiral growth
|
Van Der Hoek, B.
|
|
1982
|
58 |
2 |
p. 365-380
16 p.
|
artikel
|
| 25 |
Zone growth: A simple procedure for growing organic crystals from the melt of from the vapour phase
|
Zboiński, Zbigniew
|
|
1982
|
58 |
2 |
p. 335-338
4 p.
|
artikel
|
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