| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process
|
Horiuchi, Takashi
|
|
2019
|
517 |
C |
p. 59-63
|
artikel
|
| 2 |
Centimeter size BiSeI crystal grown by physical vapor transport method
|
Xiao, Bao
|
|
2019
|
517 |
C |
p. 7-11
|
artikel
|
| 3 |
Crystallization of sodium chloride dihydrate (hydrohalite)
|
Drebushchak, V.A.
|
|
2019
|
517 |
C |
p. 17-23
|
artikel
|
| 4 |
Editorial Board
|
|
|
2019
|
517 |
C |
p. ii
|
artikel
|
| 5 |
Effect of pH on formation of single-phase vaterite
|
Kogo, Mitsuaki
|
|
2019
|
517 |
C |
p. 35-38
|
artikel
|
| 6 |
Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs
|
Siddique, Anwar
|
|
2019
|
517 |
C |
p. 28-34
|
artikel
|
| 7 |
Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth
|
Charles, Matthew
|
|
2019
|
517 |
C |
p. 64-67
|
artikel
|
| 8 |
Kinetics of autoepitaxial crystal growth in amorphous films of Cr2O3
|
Bagmut, Aleksandr G.
|
|
2019
|
517 |
C |
p. 68-71
|
artikel
|
| 9 |
On the effect of the continuous phase on primary crystal nucleation of aqueous KNO3 solution droplets
|
Selzer, Daniel
|
|
2019
|
517 |
C |
p. 39-47
|
artikel
|
| 10 |
Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range
|
Finke, Tanja
|
|
2019
|
517 |
C |
p. 1-6
|
artikel
|
| 11 |
Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy
|
Averett, Kent L.
|
|
2019
|
517 |
C |
p. 12-16
|
artikel
|
| 12 |
Recrystallization mechanism of abnormal large grains during long growth of CVD-ZnS
|
Wei, Naiguang
|
|
2019
|
517 |
C |
p. 48-53
|
artikel
|
| 13 |
Revealing influence mechanism of a transverse static magnetic field on the refinement of primary dendrite spacing during directional solidification
|
Shen, Zhe
|
|
2019
|
517 |
C |
p. 54-58
|
artikel
|
| 14 |
Single crystal growth of transition-metal carbide hexagonal-Mo2C via La-C flux method
|
Lu, Fangjun
|
|
2019
|
517 |
C |
p. 24-27
|
artikel
|
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