| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges
|
Mukherjee, Kunal
|
|
2019
|
512 |
C |
p. 169-175
|
artikel
|
| 2 |
Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate
|
Zon,
|
|
2019
|
512 |
C |
p. 136-141
|
artikel
|
| 3 |
Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE
|
Bucamp, A.
|
|
2019
|
512 |
C |
p. 11-15
|
artikel
|
| 4 |
Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing
|
Okada, Narihito
|
|
2019
|
512 |
C |
p. 147-151
|
artikel
|
| 5 |
Crystal growth, optical and luminescence properties of Na6Mo11O36 single crystal
|
Pandey, Indra Raj
|
|
2019
|
512 |
C |
p. 1-5
|
artikel
|
| 6 |
Crystallization process and growth mechanism for hexagonal prism of strontium hydroxyapatite by urea hydrolysis
|
Huang, Jiangsheng
|
|
2019
|
512 |
C |
p. 105-111
|
artikel
|
| 7 |
Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing
|
Hayashi, Yusuke
|
|
2019
|
512 |
C |
p. 131-135
|
artikel
|
| 8 |
Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures
|
Yang, Wenxian
|
|
2019
|
512 |
C |
p. 213-218
|
artikel
|
| 9 |
Droplet etching with indium – Intermixing and lattice mismatch
|
Zocher, M.
|
|
2019
|
512 |
C |
p. 219-222
|
artikel
|
| 10 |
Editorial Board
|
|
|
2019
|
512 |
C |
p. ii
|
artikel
|
| 11 |
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
|
Nagamatsu, Kentaro
|
|
2019
|
512 |
C |
p. 78-83
|
artikel
|
| 12 |
Effect of ultrasonic treatment on the alloying and grain refinement efficiency of a Mg – Zr master alloy added to magnesium at hypo- and hyper-peritectic compositions
|
Nagasivamuni, B.
|
|
2019
|
512 |
C |
p. 20-32
|
artikel
|
| 13 |
Effect of zero, normal and hyper-gravity on columnar dendritic solidification and the columnar-to-equiaxed transition in Neopentylglycol-(D)Camphor alloy
|
Zimmermann, G.
|
|
2019
|
512 |
C |
p. 47-60
|
artikel
|
| 14 |
Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor
|
Chang, Jihoon
|
|
2019
|
512 |
C |
p. 112-118
|
artikel
|
| 15 |
Epitaxial growth of Co2FeSi/MgO/GaAs(001) heterostructures using molecular beam epitaxy
|
Hoffmann, G.
|
|
2019
|
512 |
C |
p. 194-197
|
artikel
|
| 16 |
Epitaxial growth of Cu2O on Cu substrate – A combinatorial substrate approach
|
Yeh, H.H.
|
|
2019
|
512 |
C |
p. 124-130
|
artikel
|
| 17 |
Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy
|
Piedra-Lorenzana, Jose A.
|
|
2019
|
512 |
C |
p. 37-40
|
artikel
|
| 18 |
Extension of Jackson-Hunt analysis for curved solid-liquid interfaces
|
Nani, E.S.
|
|
2019
|
512 |
C |
p. 230-240
|
artikel
|
| 19 |
Growth and characterization of diphenylmethanol single crystal by vertical Bridgman technique for second and third order nonlinear optical applications
|
Arivazhagan, T.
|
|
2019
|
512 |
C |
p. 181-188
|
artikel
|
| 20 |
Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints
|
Ito, Tomonori
|
|
2019
|
512 |
C |
p. 41-46
|
artikel
|
| 21 |
High temperature molten flux growth, structural and optical characteristics of KTiOPO4:Ho and KTiOPO4:Er single crystals
|
Sadhasivam, S.
|
|
2019
|
512 |
C |
p. 152-158
|
artikel
|
| 22 |
Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells
|
Deligiannakis, V.
|
|
2019
|
512 |
C |
p. 203-207
|
artikel
|
| 23 |
Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates
|
Ishii, Kenta
|
|
2019
|
512 |
C |
p. 96-99
|
artikel
|
| 24 |
Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
|
Ohkawa, Kazuhiro
|
|
2019
|
512 |
C |
p. 69-73
|
artikel
|
| 25 |
Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy
|
Huang, W.G.
|
|
2019
|
512 |
C |
p. 61-64
|
artikel
|
| 26 |
Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells
|
Chevuntulak, C.
|
|
2019
|
512 |
C |
p. 159-163
|
artikel
|
| 27 |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
|
Lin, K.Y.
|
|
2019
|
512 |
C |
p. 223-229
|
artikel
|
| 28 |
Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B
|
Henksmeier, Tobias
|
|
2019
|
512 |
C |
p. 164-168
|
artikel
|
| 29 |
Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE
|
Turski, Henryk
|
|
2019
|
512 |
C |
p. 208-212
|
artikel
|
| 30 |
Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer
|
Lee, Sangyeop
|
|
2019
|
512 |
C |
p. 176-180
|
artikel
|
| 31 |
Nonpolar m-plane Al x Ga 1 - x N layers grown on m-plane sapphire by MOVPE
|
Dinh, Duc V.
|
|
2019
|
512 |
C |
p. 100-104
|
artikel
|
| 32 |
Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy
|
Zhang, J.
|
|
2019
|
512 |
C |
p. 84-89
|
artikel
|
| 33 |
Pursuit of single domain ZnTe layers on sapphire substrates
|
Kobayashi, Masakazu
|
|
2019
|
512 |
C |
p. 189-193
|
artikel
|
| 34 |
Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film
|
Tanaka, Shuichi
|
|
2019
|
512 |
C |
p. 16-19
|
artikel
|
| 35 |
Real-time structural analysis of InGaAs/InAs/GaAs(1 1 1)A interfaces by in situ synchrotron X-ray reciprocal space mapping
|
Sasaki, Takuo
|
|
2019
|
512 |
C |
p. 33-36
|
artikel
|
| 36 |
Reduced radial resistivity variation of FZ Si wafers with Advanced NTD
|
Lei, Anders
|
|
2019
|
512 |
C |
p. 65-68
|
artikel
|
| 37 |
Reduction in residual impurities in semi-polar 3 0 3 ¯ 1 ¯ and 2 0 2 ¯ 1 ¯ GaN grown by metalorganic vapor phase epitaxy
|
Yamada, Hisashi
|
|
2019
|
512 |
C |
p. 119-123
|
artikel
|
| 38 |
Relationship of the shape and size between etch pits and corresponding Te inclusions in CdZnTe crystals
|
Zhang, Jun Jun
|
|
2019
|
512 |
C |
p. 90-95
|
artikel
|
| 39 |
Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates
|
Desplanque, L.
|
|
2019
|
512 |
C |
p. 6-10
|
artikel
|
| 40 |
Stabilization of sputtered AlN/sapphire templates during high temperature annealing
|
Hagedorn, S.
|
|
2019
|
512 |
C |
p. 142-146
|
artikel
|
| 41 |
Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field
|
Lekwongderm, P.
|
|
2019
|
512 |
C |
p. 198-202
|
artikel
|
| 42 |
Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (1 1 3)A and (1 1 3)B GaAs substrates
|
Lu, Xiangmeng
|
|
2019
|
512 |
C |
p. 74-77
|
artikel
|
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