| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for the removal of free indium from the surface of InP grown by liquid phase epitaxy
|
Antell, G.R.
|
|
1980
|
49 |
3 |
p. 591-592
2 p.
|
artikel
|
| 2 |
An improved design to grow larger and more perfect single crystals in gels
|
Patel, A.R.
|
|
1980
|
49 |
3 |
p. 589-590
2 p.
|
artikel
|
| 3 |
A thermal transmission function for fused silica ampoules
|
Holland, Lawrence Rozier
|
|
1980
|
49 |
3 |
p. 426-430
5 p.
|
artikel
|
| 4 |
Computational studies on the convection caused by crystal rotation in a crucible
|
Kobayashi, N.
|
|
1980
|
49 |
3 |
p. 419-425
7 p.
|
artikel
|
| 5 |
Deposition of polysilicon as an example of a pyrolytic CVD process
|
Korec, Jacek
|
|
1980
|
49 |
3 |
p. 547-558
12 p.
|
artikel
|
| 6 |
Effects of an electric field on the growth of CdS crystals
|
Iwanaga, H.
|
|
1980
|
49 |
3 |
p. 541-546
6 p.
|
artikel
|
| 7 |
Erratum
|
|
|
1980
|
49 |
3 |
p. 594-
1 p.
|
artikel
|
| 8 |
Evidence for spiral growth on the pyramidal faces of KDP and ADP single crystals
|
Van Enckevort, W.J.P.
|
|
1980
|
49 |
3 |
p. 502-514
13 p.
|
artikel
|
| 9 |
Fluid-flow effect on gas-bubble entrapment in Czochralski-grown oxide crystals
|
Miyazawa, Shintaro
|
|
1980
|
49 |
3 |
p. 515-521
7 p.
|
artikel
|
| 10 |
Growth mechanism of cadmium iodide polytypes
|
Sharma, S.D.
|
|
1980
|
49 |
3 |
p. 580-588
9 p.
|
artikel
|
| 11 |
Growth of ice discs from the vapor and the mechanism of habit change of ice crystals
|
Keller, V.W.
|
|
1980
|
49 |
3 |
p. 458-464
7 p.
|
artikel
|
| 12 |
Interface field effects on solute redistribution during crystallization
|
Tiller, William A.
|
|
1980
|
49 |
3 |
p. 483-501
19 p.
|
artikel
|
| 13 |
Low temperature phase diagram of In-Ga-P ternary system
|
Sugiura, Toshifumi
|
|
1980
|
49 |
3 |
p. 559-562
4 p.
|
artikel
|
| 14 |
Microsegregation in cellular and cellular dendritic growth
|
Solari, Mario
|
|
1980
|
49 |
3 |
p. 451-457
7 p.
|
artikel
|
| 15 |
Mismatch dislocations and lattice distortion for Cd(S, Se) films grown on (111), (110) and (001) InP substrates
|
Jones, K.A.
|
|
1980
|
49 |
3 |
p. 522-530
9 p.
|
artikel
|
| 16 |
Morphological stability of a planar interface during unidirectional growth of a dilute binary alloy
|
Billia, B.
|
|
1980
|
49 |
3 |
p. 431-434
4 p.
|
artikel
|
| 17 |
Needle crystals arising from discharge-induced decomposition of hexacarbonyltungsten molecules
|
Okuyama, F.
|
|
1980
|
49 |
3 |
p. 531-540
10 p.
|
artikel
|
| 18 |
Rate-determining reactions and surface species in CVD of silicon
|
Bloem, J.
|
|
1980
|
49 |
3 |
p. 435-444
10 p.
|
artikel
|
| 19 |
The influence of an electric field on the sublimation kinetics of alkali halide surfaces
|
Yacamán, M. José
|
|
1980
|
49 |
3 |
p. 475-482
8 p.
|
artikel
|
| 20 |
The occurence of uric acids and the growth morphology of the anhydrous monoclinic modification : C5H4N4O3
|
Rinaudo, C.
|
|
1980
|
49 |
3 |
p. 569-579
11 p.
|
artikel
|
| 21 |
The queen's award for technological achievement
|
|
|
1980
|
49 |
3 |
p. 593-
1 p.
|
artikel
|
| 22 |
The role of Mn-Al-Cl complexes in crystal growth of MnS, MnSe and MnTe by chemical vapor transport
|
Pajaczkowska, A.
|
|
1980
|
49 |
3 |
p. 563-568
6 p.
|
artikel
|
| 23 |
Transients in the rate of crystal growth
|
Gilmer, George H.
|
|
1980
|
49 |
3 |
p. 465-474
10 p.
|
artikel
|
| 24 |
Ultrasonic chemical vapor deposition of TiB2 thick films
|
Takahashi, Takehiko
|
|
1980
|
49 |
3 |
p. 445-450
6 p.
|
artikel
|
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