| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Annealing effects on uniaxial magnetic anisotropy for CaGe-Garnet epitaxial films grown by LPE
|
Mikami, M.
|
|
1980
|
49 |
2 |
p. 381-386
6 p.
|
article
|
| 2 |
A transmission electron microscopy study of intermetallic formation in aluminium-copper thin-film couples
|
Rajan, K.
|
|
1980
|
49 |
2 |
p. 297-302
6 p.
|
article
|
| 3 |
A weighing method of source materials for liquid phase epitaxy
|
Takahei, K.
|
|
1980
|
49 |
2 |
p. 403-406
4 p.
|
article
|
| 4 |
Contact angles and free energies at the solid-melt interface of mixed KCl-NaCl crystals
|
Grange, G.
|
|
1980
|
49 |
2 |
p. 343-348
6 p.
|
article
|
| 5 |
Critical cooling rate for growth from large, low prandtl number solutions: GaAs
|
Holmes, D.E.
|
|
1980
|
49 |
2 |
p. 407-409
3 p.
|
article
|
| 6 |
Crystal pulling using acrt
|
Scheel, H.J.
|
|
1980
|
49 |
2 |
p. 291-296
6 p.
|
article
|
| 7 |
Growth and properties of various scheelite type mixed crystal systems
|
Oeder, R.
|
|
1980
|
49 |
2 |
p. 349-356
8 p.
|
article
|
| 8 |
Growth defects in isomorphous Ba(NO3)2 and Sr(NO3)2 crystals
|
Ribet, M.
|
|
1980
|
49 |
2 |
p. 334-342
9 p.
|
article
|
| 9 |
Growth of vanadium diiodide, VI2, single crystals from the vapour phase
|
Lamprecht, G.
|
|
1980
|
49 |
2 |
p. 415-417
3 p.
|
article
|
| 10 |
Heterointerface morphology of Pb1-Y Sn YTe-Pb1-XSnXTe (X, Y ⪅ 0.3) double heterostructure (DH) grown by LPE
|
Yoshikawa, Mitsuo
|
|
1980
|
49 |
2 |
p. 213-218
6 p.
|
article
|
| 11 |
Initial transient segregation during unidirectional solidification of a binary alloy in a furnace with thermal damping
|
Favier, Jean-Jacques
|
|
1980
|
49 |
2 |
p. 373-380
8 p.
|
article
|
| 12 |
Investigation of convection in melts and crystal growth under large inertial accelerations
|
Müller, G.
|
|
1980
|
49 |
2 |
p. 387-395
9 p.
|
article
|
| 13 |
On the occurrence of twinned dendrites in rapidly solidified aluminum alloys
|
Chattopadhyay, K.
|
|
1980
|
49 |
2 |
p. 322-324
3 p.
|
article
|
| 14 |
Optical and scanning electron microscopic examination of α- and β-Ga2Se3
|
Khan, M.Y.
|
|
1980
|
49 |
2 |
p. 303-308
6 p.
|
article
|
| 15 |
Optical imaging of growth defects in infrared crystals
|
Feigelson, Robert S.
|
|
1980
|
49 |
2 |
p. 399-402
4 p.
|
article
|
| 16 |
Orientation cristalline et répartition des cristaux insulaires à la surface des monocristaux de fer zone fondue
|
Viltange, Micheline
|
|
1980
|
49 |
2 |
p. 309-321
13 p.
|
article
|
| 17 |
Polytype characterization of SnS2 crystals grown from Sn-rich melts
|
Mikkelsen Jr., J.C.
|
|
1980
|
49 |
2 |
p. 253-260
8 p.
|
article
|
| 18 |
Quantitative determination of microdefect density in dislocation-free silicon by preferential chemical etching
|
Series, R.W.
|
|
1980
|
49 |
2 |
p. 363-367
5 p.
|
article
|
| 19 |
Relations entre la morphologie théorique et la morphologie observée des cristaux de CdCl2 · 2.5 H2O
|
Dumas, A.
|
|
1980
|
49 |
2 |
p. 233-244
12 p.
|
article
|
| 20 |
Single crystal growth of LiAl
|
Yahagi, M.
|
|
1980
|
49 |
2 |
p. 396-398
3 p.
|
article
|
| 21 |
The crystallization of barium titanate from melts — a comparison of different prospective oxy-anion solvents
|
Roy, B.N.
|
|
1980
|
49 |
2 |
p. 368-372
5 p.
|
article
|
| 22 |
The growth of large, laser quality Nd x RE1-x P5O14 crystals
|
Plättner, R.D.
|
|
1980
|
49 |
2 |
p. 274-290
17 p.
|
article
|
| 23 |
The growth of void-free crystal cored fibres of organic materials
|
Babai, F.H.
|
|
1980
|
49 |
2 |
p. 245-252
8 p.
|
article
|
| 24 |
Theory of dendritic growth during the directional solidification of binary alloys
|
Trivedi, R.
|
|
1980
|
49 |
2 |
p. 219-232
14 p.
|
article
|
| 25 |
The purification and single crystal growth of n-alkanes
|
Narang, R.S.
|
|
1980
|
49 |
2 |
p. 357-362
6 p.
|
article
|
| 26 |
Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process
|
Koukitu, Akinori
|
|
1980
|
49 |
2 |
p. 325-333
9 p.
|
article
|
| 27 |
Two-phase (α/β)-brass bicrystals with nearly uniform and thermodynamic equilibrium concentrations
|
Hashimoto, Satoshi
|
|
1980
|
49 |
2 |
p. 410-414
5 p.
|
article
|
| 28 |
Vertical bridgman growth of CdGeAs2 with control of interface shape and orientation
|
Feigelson, Robert S.
|
|
1980
|
49 |
2 |
p. 261-273
13 p.
|
article
|
Journal description