nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Annealing effects on uniaxial magnetic anisotropy for CaGe-Garnet epitaxial films grown by LPE
|
Mikami, M. |
|
1980 |
49 |
2 |
p. 381-386 6 p. |
artikel |
2 |
A transmission electron microscopy study of intermetallic formation in aluminium-copper thin-film couples
|
Rajan, K. |
|
1980 |
49 |
2 |
p. 297-302 6 p. |
artikel |
3 |
A weighing method of source materials for liquid phase epitaxy
|
Takahei, K. |
|
1980 |
49 |
2 |
p. 403-406 4 p. |
artikel |
4 |
Contact angles and free energies at the solid-melt interface of mixed KCl-NaCl crystals
|
Grange, G. |
|
1980 |
49 |
2 |
p. 343-348 6 p. |
artikel |
5 |
Critical cooling rate for growth from large, low prandtl number solutions: GaAs
|
Holmes, D.E. |
|
1980 |
49 |
2 |
p. 407-409 3 p. |
artikel |
6 |
Crystal pulling using acrt
|
Scheel, H.J. |
|
1980 |
49 |
2 |
p. 291-296 6 p. |
artikel |
7 |
Growth and properties of various scheelite type mixed crystal systems
|
Oeder, R. |
|
1980 |
49 |
2 |
p. 349-356 8 p. |
artikel |
8 |
Growth defects in isomorphous Ba(NO3)2 and Sr(NO3)2 crystals
|
Ribet, M. |
|
1980 |
49 |
2 |
p. 334-342 9 p. |
artikel |
9 |
Growth of vanadium diiodide, VI2, single crystals from the vapour phase
|
Lamprecht, G. |
|
1980 |
49 |
2 |
p. 415-417 3 p. |
artikel |
10 |
Heterointerface morphology of Pb1-Y Sn YTe-Pb1-XSnXTe (X, Y ⪅ 0.3) double heterostructure (DH) grown by LPE
|
Yoshikawa, Mitsuo |
|
1980 |
49 |
2 |
p. 213-218 6 p. |
artikel |
11 |
Initial transient segregation during unidirectional solidification of a binary alloy in a furnace with thermal damping
|
Favier, Jean-Jacques |
|
1980 |
49 |
2 |
p. 373-380 8 p. |
artikel |
12 |
Investigation of convection in melts and crystal growth under large inertial accelerations
|
Müller, G. |
|
1980 |
49 |
2 |
p. 387-395 9 p. |
artikel |
13 |
On the occurrence of twinned dendrites in rapidly solidified aluminum alloys
|
Chattopadhyay, K. |
|
1980 |
49 |
2 |
p. 322-324 3 p. |
artikel |
14 |
Optical and scanning electron microscopic examination of α- and β-Ga2Se3
|
Khan, M.Y. |
|
1980 |
49 |
2 |
p. 303-308 6 p. |
artikel |
15 |
Optical imaging of growth defects in infrared crystals
|
Feigelson, Robert S. |
|
1980 |
49 |
2 |
p. 399-402 4 p. |
artikel |
16 |
Orientation cristalline et répartition des cristaux insulaires à la surface des monocristaux de fer zone fondue
|
Viltange, Micheline |
|
1980 |
49 |
2 |
p. 309-321 13 p. |
artikel |
17 |
Polytype characterization of SnS2 crystals grown from Sn-rich melts
|
Mikkelsen Jr., J.C. |
|
1980 |
49 |
2 |
p. 253-260 8 p. |
artikel |
18 |
Quantitative determination of microdefect density in dislocation-free silicon by preferential chemical etching
|
Series, R.W. |
|
1980 |
49 |
2 |
p. 363-367 5 p. |
artikel |
19 |
Relations entre la morphologie théorique et la morphologie observée des cristaux de CdCl2 · 2.5 H2O
|
Dumas, A. |
|
1980 |
49 |
2 |
p. 233-244 12 p. |
artikel |
20 |
Single crystal growth of LiAl
|
Yahagi, M. |
|
1980 |
49 |
2 |
p. 396-398 3 p. |
artikel |
21 |
The crystallization of barium titanate from melts — a comparison of different prospective oxy-anion solvents
|
Roy, B.N. |
|
1980 |
49 |
2 |
p. 368-372 5 p. |
artikel |
22 |
The growth of large, laser quality Nd x RE1-x P5O14 crystals
|
Plättner, R.D. |
|
1980 |
49 |
2 |
p. 274-290 17 p. |
artikel |
23 |
The growth of void-free crystal cored fibres of organic materials
|
Babai, F.H. |
|
1980 |
49 |
2 |
p. 245-252 8 p. |
artikel |
24 |
Theory of dendritic growth during the directional solidification of binary alloys
|
Trivedi, R. |
|
1980 |
49 |
2 |
p. 219-232 14 p. |
artikel |
25 |
The purification and single crystal growth of n-alkanes
|
Narang, R.S. |
|
1980 |
49 |
2 |
p. 357-362 6 p. |
artikel |
26 |
Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process
|
Koukitu, Akinori |
|
1980 |
49 |
2 |
p. 325-333 9 p. |
artikel |
27 |
Two-phase (α/β)-brass bicrystals with nearly uniform and thermodynamic equilibrium concentrations
|
Hashimoto, Satoshi |
|
1980 |
49 |
2 |
p. 410-414 5 p. |
artikel |
28 |
Vertical bridgman growth of CdGeAs2 with control of interface shape and orientation
|
Feigelson, Robert S. |
|
1980 |
49 |
2 |
p. 261-273 13 p. |
artikel |