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                             17 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Crystal and multiple melting behaviors of PCL lamellae in ultrathin films Yu, Xiang
2016
438 C p. 11-18
8 p.
artikel
2 Crystal growth and dynamic ferroelectric hysteresis scaling behavior of molecular ferroelectric diisopropylammonium bromide Jiang, Chunli
2016
438 C p. 25-30
6 p.
artikel
3 Determination of composition and energy gaps of GaInNAsSb layers grown by MBE Aho, A.
2016
438 C p. 49-54
6 p.
artikel
4 Editorial Board 2016
438 C p. IFC-
1 p.
artikel
5 Experimental investigation on effects of crystal and crucible rotation on thermal convection in a model Czochralski configuration Shen, Ting
2016
438 C p. 55-62
8 p.
artikel
6 Experimental study of cold plume instability in large Prandtl number Czochralski melt: Parametric dependences and scaling laws Miroshnichenko, E.
2016
438 C p. 38-42
5 p.
artikel
7 Ge dots formation using Si(100)-c(4×4) surface reconstruction Satoh, Yuhki
2016
438 C p. 1-4
4 p.
artikel
8 Growth and characterization of boron doped graphene by Hot Filament Chemical Vapor Deposition Technique (HFCVD) Jafari, A.
2016
438 C p. 70-75
6 p.
artikel
9 Growth mechanism evolvement influence on out-of-plane texture of Y2O3 seed layer for coated conductors Xia, Yudong
2016
438 C p. 5-10
6 p.
artikel
10 Influence of film composition on the transition temperature of FeRh films Jiang, M.
2016
438 C p. 19-24
6 p.
artikel
11 Lifetime improvement of photovoltaic silicon crystals grown by Czochralski technique using “liquinert” quartz crucibles Fukuda, Tetsuo
2016
438 C p. 76-80
5 p.
artikel
12 MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates Ludewig, P.
2016
438 C p. 63-69
7 p.
artikel
13 Numerical study of liquid phase diffusion growth of SiGe subjected to accelerated crucible rotation Sekhon, M.
2016
438 C p. 90-98
9 p.
artikel
14 Static sublimation purification process and characterization of LiZnAs semiconductor material Montag, Benjamin W.
2016
438 C p. 99-103
5 p.
artikel
15 Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Bryan, Isaac
2016
438 C p. 81-89
9 p.
artikel
16 Surfactant antimony enhanced indium incorporation on InGaN ( 000 1 ¯ ) surface: A DFT study Zhang, Yiou
2016
438 C p. 43-48
6 p.
artikel
17 Synthesis of hollow spherical tin phosphides (Sn4P3) and their high adsorptive and electrochemical performance Liu, Shuling
2016
438 C p. 31-37
7 p.
artikel
                             17 gevonden resultaten
 
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