nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Crystal and multiple melting behaviors of PCL lamellae in ultrathin films
|
Yu, Xiang |
|
2016 |
438 |
C |
p. 11-18 8 p. |
artikel |
2 |
Crystal growth and dynamic ferroelectric hysteresis scaling behavior of molecular ferroelectric diisopropylammonium bromide
|
Jiang, Chunli |
|
2016 |
438 |
C |
p. 25-30 6 p. |
artikel |
3 |
Determination of composition and energy gaps of GaInNAsSb layers grown by MBE
|
Aho, A. |
|
2016 |
438 |
C |
p. 49-54 6 p. |
artikel |
4 |
Editorial Board
|
|
|
2016 |
438 |
C |
p. IFC- 1 p. |
artikel |
5 |
Experimental investigation on effects of crystal and crucible rotation on thermal convection in a model Czochralski configuration
|
Shen, Ting |
|
2016 |
438 |
C |
p. 55-62 8 p. |
artikel |
6 |
Experimental study of cold plume instability in large Prandtl number Czochralski melt: Parametric dependences and scaling laws
|
Miroshnichenko, E. |
|
2016 |
438 |
C |
p. 38-42 5 p. |
artikel |
7 |
Ge dots formation using Si(100)-c(4×4) surface reconstruction
|
Satoh, Yuhki |
|
2016 |
438 |
C |
p. 1-4 4 p. |
artikel |
8 |
Growth and characterization of boron doped graphene by Hot Filament Chemical Vapor Deposition Technique (HFCVD)
|
Jafari, A. |
|
2016 |
438 |
C |
p. 70-75 6 p. |
artikel |
9 |
Growth mechanism evolvement influence on out-of-plane texture of Y2O3 seed layer for coated conductors
|
Xia, Yudong |
|
2016 |
438 |
C |
p. 5-10 6 p. |
artikel |
10 |
Influence of film composition on the transition temperature of FeRh films
|
Jiang, M. |
|
2016 |
438 |
C |
p. 19-24 6 p. |
artikel |
11 |
Lifetime improvement of photovoltaic silicon crystals grown by Czochralski technique using “liquinert” quartz crucibles
|
Fukuda, Tetsuo |
|
2016 |
438 |
C |
p. 76-80 5 p. |
artikel |
12 |
MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates
|
Ludewig, P. |
|
2016 |
438 |
C |
p. 63-69 7 p. |
artikel |
13 |
Numerical study of liquid phase diffusion growth of SiGe subjected to accelerated crucible rotation
|
Sekhon, M. |
|
2016 |
438 |
C |
p. 90-98 9 p. |
artikel |
14 |
Static sublimation purification process and characterization of LiZnAs semiconductor material
|
Montag, Benjamin W. |
|
2016 |
438 |
C |
p. 99-103 5 p. |
artikel |
15 |
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
|
Bryan, Isaac |
|
2016 |
438 |
C |
p. 81-89 9 p. |
artikel |
16 |
Surfactant antimony enhanced indium incorporation on InGaN ( 000 1 ¯ ) surface: A DFT study
|
Zhang, Yiou |
|
2016 |
438 |
C |
p. 43-48 6 p. |
artikel |
17 |
Synthesis of hollow spherical tin phosphides (Sn4P3) and their high adsorptive and electrochemical performance
|
Liu, Shuling |
|
2016 |
438 |
C |
p. 31-37 7 p. |
artikel |