nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Ca2SnS4: Crystal structure, optical property, and electronic structure
|
Zhou, Molin |
|
2016 |
434 |
C |
p. 67-71 5 p. |
artikel |
2 |
CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa
|
Della Casa, Pietro |
|
2016 |
434 |
C |
p. 116-122 7 p. |
artikel |
3 |
Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor
|
Schulte, Kevin L. |
|
2016 |
434 |
C |
p. 138-147 10 p. |
artikel |
4 |
Controllable synthesis and characterization of α-MnO2 nanowires
|
Hu, Xiulan |
|
2016 |
434 |
C |
p. 7-12 6 p. |
artikel |
5 |
Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE
|
Torelly, G. |
|
2016 |
434 |
C |
p. 47-54 8 p. |
artikel |
6 |
Editorial Board
|
|
|
2016 |
434 |
C |
p. IFC- 1 p. |
artikel |
7 |
Effect of rotational speed on rapid separation of primary silicon from an Al–Si alloy by novel centrifugation
|
Youn, Ji Won |
|
2016 |
434 |
C |
p. 55-61 7 p. |
artikel |
8 |
Formation of SiC layer by carbonization of Si surface using CO gas
|
Deura, Momoko |
|
2016 |
434 |
C |
p. 77-80 4 p. |
artikel |
9 |
Impact of high microwave power on hydrogen impurity trapping in nanocrystalline diamond films grown with simultaneous nitrogen and oxygen addition into methane/hydrogen plasma
|
Tang, C.J. |
|
2016 |
434 |
C |
p. 36-41 6 p. |
artikel |
10 |
InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates
|
Fuster, David |
|
2016 |
434 |
C |
p. 81-87 7 p. |
artikel |
11 |
Influence of Al content on non-equilibrium solidification behavior of Ni–Al–Ta model single crystal alloys
|
Ai, Cheng |
|
2016 |
434 |
C |
p. 96-103 8 p. |
artikel |
12 |
Influence of different seed materials on multi-crystalline silicon ingot properties
|
Reimann, C. |
|
2016 |
434 |
C |
p. 88-95 8 p. |
artikel |
13 |
Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt
|
Abe, T. |
|
2016 |
434 |
C |
p. 128-137 10 p. |
artikel |
14 |
Large scale synthesis of nanoporous BN flake with high surface areas
|
Zhu, Hui-Ling |
|
2016 |
434 |
C |
p. 19-24 6 p. |
artikel |
15 |
Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer
|
Monteagudo-Lerma, L. |
|
2016 |
434 |
C |
p. 13-18 6 p. |
artikel |
16 |
Nitrate (chloride) melts as media for crystal growth of complex phosphates of alkali and trivalent metals
|
Livitska, Oksana |
|
2016 |
434 |
C |
p. 30-35 6 p. |
artikel |
17 |
Numerical study on the radial dopant distribution in micro-pulling-down crystal growth
|
Zeng, Zhong |
|
2016 |
434 |
C |
p. 110-115 6 p. |
artikel |
18 |
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
|
Lutsenko, E.V. |
|
2016 |
434 |
C |
p. 62-66 5 p. |
artikel |
19 |
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
|
Lekhal, Kaddour |
|
2016 |
434 |
C |
p. 25-29 5 p. |
artikel |
20 |
Origins of hillock defects on GaN templates grown on Si(111)
|
Han, Y. |
|
2016 |
434 |
C |
p. 123-127 5 p. |
artikel |
21 |
Poly(acrylic acid) to induce competitive crystallization of a theophylline/oxalic acid cocrystal and a theophylline polymorph
|
Jang, Jisun |
|
2016 |
434 |
C |
p. 104-109 6 p. |
artikel |
22 |
Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method
|
Hou, L. |
|
2016 |
434 |
C |
p. 42-46 5 p. |
artikel |
23 |
Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree
|
Bouazizi, H. |
|
2016 |
434 |
C |
p. 72-76 5 p. |
artikel |
24 |
Thin single-crystalline Bi2(Te1−xSex)3 ternary nanosheets synthesized by a solvothermal technique
|
Guo, Jing |
|
2016 |
434 |
C |
p. 1-6 6 p. |
artikel |