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                             24 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ca2SnS4: Crystal structure, optical property, and electronic structure Zhou, Molin
2016
434 C p. 67-71
5 p.
artikel
2 CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa Della Casa, Pietro
2016
434 C p. 116-122
7 p.
artikel
3 Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor Schulte, Kevin L.
2016
434 C p. 138-147
10 p.
artikel
4 Controllable synthesis and characterization of α-MnO2 nanowires Hu, Xiulan
2016
434 C p. 7-12
6 p.
artikel
5 Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE Torelly, G.
2016
434 C p. 47-54
8 p.
artikel
6 Editorial Board 2016
434 C p. IFC-
1 p.
artikel
7 Effect of rotational speed on rapid separation of primary silicon from an Al–Si alloy by novel centrifugation Youn, Ji Won
2016
434 C p. 55-61
7 p.
artikel
8 Formation of SiC layer by carbonization of Si surface using CO gas Deura, Momoko
2016
434 C p. 77-80
4 p.
artikel
9 Impact of high microwave power on hydrogen impurity trapping in nanocrystalline diamond films grown with simultaneous nitrogen and oxygen addition into methane/hydrogen plasma Tang, C.J.
2016
434 C p. 36-41
6 p.
artikel
10 InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates Fuster, David
2016
434 C p. 81-87
7 p.
artikel
11 Influence of Al content on non-equilibrium solidification behavior of Ni–Al–Ta model single crystal alloys Ai, Cheng
2016
434 C p. 96-103
8 p.
artikel
12 Influence of different seed materials on multi-crystalline silicon ingot properties Reimann, C.
2016
434 C p. 88-95
8 p.
artikel
13 Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt Abe, T.
2016
434 C p. 128-137
10 p.
artikel
14 Large scale synthesis of nanoporous BN flake with high surface areas Zhu, Hui-Ling
2016
434 C p. 19-24
6 p.
artikel
15 Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer Monteagudo-Lerma, L.
2016
434 C p. 13-18
6 p.
artikel
16 Nitrate (chloride) melts as media for crystal growth of complex phosphates of alkali and trivalent metals Livitska, Oksana
2016
434 C p. 30-35
6 p.
artikel
17 Numerical study on the radial dopant distribution in micro-pulling-down crystal growth Zeng, Zhong
2016
434 C p. 110-115
6 p.
artikel
18 Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults Lutsenko, E.V.
2016
434 C p. 62-66
5 p.
artikel
19 Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells Lekhal, Kaddour
2016
434 C p. 25-29
5 p.
artikel
20 Origins of hillock defects on GaN templates grown on Si(111) Han, Y.
2016
434 C p. 123-127
5 p.
artikel
21 Poly(acrylic acid) to induce competitive crystallization of a theophylline/oxalic acid cocrystal and a theophylline polymorph Jang, Jisun
2016
434 C p. 104-109
6 p.
artikel
22 Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method Hou, L.
2016
434 C p. 42-46
5 p.
artikel
23 Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree Bouazizi, H.
2016
434 C p. 72-76
5 p.
artikel
24 Thin single-crystalline Bi2(Te1−xSex)3 ternary nanosheets synthesized by a solvothermal technique Guo, Jing
2016
434 C p. 1-6
6 p.
artikel
                             24 gevonden resultaten
 
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