| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Bulk growth of uniform and near stoichiometric cadmium telluride
|
Swain, Santosh K.
|
|
2014
|
389 |
C |
p. 134-138
5 p.
|
artikel
|
| 2 |
Crystalline boron nanowires grown on the diamond surface
|
Bai, H.
|
|
2014
|
389 |
C |
p. 74-77
4 p.
|
artikel
|
| 3 |
Density limits of high temperature and multiple local droplet etching on AlAs
|
Kerbst, J.
|
|
2014
|
389 |
C |
p. 18-22
5 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
2014
|
389 |
C |
p. IFC-
1 p.
|
artikel
|
| 5 |
Effect of solidification parameters on the microstructures of superalloy CMSX-6 formed during the downward directional solidification process
|
Wang, F.
|
|
2014
|
389 |
C |
p. 47-54
8 p.
|
artikel
|
| 6 |
Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism
|
Ren, Lizhu
|
|
2014
|
389 |
C |
p. 55-59
5 p.
|
artikel
|
| 7 |
Evaluation of CdTe x Se1−x crystals grown from a Te-rich solution
|
Roy, U.N.
|
|
2014
|
389 |
C |
p. 99-102
4 p.
|
artikel
|
| 8 |
Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method
|
Nakajima, Kazuo
|
|
2014
|
389 |
C |
p. 112-119
8 p.
|
artikel
|
| 9 |
Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach
|
Kang, Kyung-Han
|
|
2014
|
389 |
C |
p. 120-133
14 p.
|
artikel
|
| 10 |
Growth and characterization of terbium fumarate heptahydrate single crystals
|
Want, B.
|
|
2014
|
389 |
C |
p. 39-46
8 p.
|
artikel
|
| 11 |
Growth and physical characterization of AgGa1−x In x Se2 (x=0.5) single crystals grown by modified vertical Bridgman method
|
Vijayakumar, P.
|
|
2014
|
389 |
C |
p. 139-143
5 p.
|
artikel
|
| 12 |
Growth, morphology, spectral and thermal studies of gel grown diclofenac acid crystals
|
Ramachandran, E.
|
|
2014
|
389 |
C |
p. 78-82
5 p.
|
artikel
|
| 13 |
Growth of calcite seeds in a magnetized environment
|
Tai, Clifford Y.
|
|
2014
|
389 |
C |
p. 5-11
7 p.
|
artikel
|
| 14 |
Growth of crack-free ZnGeP2 large single crystals for high-power mid-infrared OPO applications
|
Lei, Zuotao
|
|
2014
|
389 |
C |
p. 23-29
7 p.
|
artikel
|
| 15 |
Growth, optical, thermal, dielectric and microhardness characterizations of melaminium bis (trifluoroacetate) trihydrate single crystal
|
Sangeetha, V.
|
|
2014
|
389 |
C |
p. 30-38
9 p.
|
artikel
|
| 16 |
Influence of film thickness on the morphological and electrical properties of epitaxial TiC films deposited by reactive magnetron sputtering on MgO substrates
|
Zoita, N.C.
|
|
2014
|
389 |
C |
p. 92-98
7 p.
|
artikel
|
| 17 |
Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field
|
Chen, Xi
|
|
2014
|
389 |
C |
p. 60-67
8 p.
|
artikel
|
| 18 |
Multilayer structures of silicon-suboxide embedded in single crystal silicon
|
Pohl, Christoph
|
|
2014
|
389 |
C |
p. 12-17
6 p.
|
artikel
|
| 19 |
On the solution of solute diffusion during eutectic growth
|
Wang, Haifeng
|
|
2014
|
389 |
C |
p. 68-73
6 p.
|
artikel
|
| 20 |
RETRACTED: Interactions between planar defects in bulk 3C-SiC
|
Ikebe, Yohei
|
|
2014
|
389 |
C |
p. 108-111
4 p.
|
artikel
|
| 21 |
RETRACTED: Interactions between planar defects in bulk 3C-SiC
|
Ikebe, Yohei
|
|
2014
|
389 |
C |
p. R1-
1 p.
|
artikel
|
| 22 |
Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films
|
Tang, C.J.
|
|
2014
|
389 |
C |
p. 83-91
9 p.
|
artikel
|
| 23 |
Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates
|
Li, Huijie
|
|
2014
|
389 |
C |
p. 1-4
4 p.
|
artikel
|
| 24 |
Tapering and crystal structure of indium phosphide nanowires grown by selective area vapor liquid solid epitaxy
|
Greenberg, Ya'akov
|
|
2014
|
389 |
C |
p. 103-107
5 p.
|
artikel
|
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