| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy
|
Oyama, Yutaka
|
|
2003
|
258 |
1-2 |
p. 41-48
8 p.
|
artikel
|
| 2 |
Annealing studies on CBD grown CdS thin films
|
Metin, H
|
|
2003
|
258 |
1-2 |
p. 141-148
8 p.
|
artikel
|
| 3 |
A one-dimensional model to predict the growth conditions of In x Ga1−x As alloy crystals grown by the traveling liquidus-zone method
|
Nakamura, Hirohiko
|
|
2003
|
258 |
1-2 |
p. 49-57
9 p.
|
artikel
|
| 4 |
Corrigendum to: “A phase field model with electric current”
|
Brush, Lucien N
|
|
2003
|
258 |
1-2 |
p. 223-
1 p.
|
artikel
|
| 5 |
Critical layer thickness enhancement of InAs overgrowth on porous GaAs
|
Beji, L.
|
|
2003
|
258 |
1-2 |
p. 84-88
5 p.
|
artikel
|
| 6 |
Dependence of growth rate on initial crystal size
|
Žekić, A.A
|
|
2003
|
258 |
1-2 |
p. 204-210
7 p.
|
artikel
|
| 7 |
Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy
|
Gil-Lafon, E
|
|
2003
|
258 |
1-2 |
p. 14-25
12 p.
|
artikel
|
| 8 |
Dislocation-free Czochralski Si crystal growth without a thin neck: dislocation behavior due to incomplete seeding
|
Taishi, Toshinori
|
|
2003
|
258 |
1-2 |
p. 58-64
7 p.
|
artikel
|
| 9 |
Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on A1N and A10.2Ga0.8N buffer layers
|
Preble, E.A.
|
|
2003
|
258 |
1-2 |
p. 75-83
9 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2003
|
258 |
1-2 |
p. ii-
1 p.
|
artikel
|
| 11 |
Effect of anneal temperature on GaN nucleation layer transformation
|
Lada, M
|
|
2003
|
258 |
1-2 |
p. 89-99
11 p.
|
artikel
|
| 12 |
Effects of organic additives on hydrothermal zirconia nanocrystallites
|
Jiao, Xiuling
|
|
2003
|
258 |
1-2 |
p. 158-162
5 p.
|
artikel
|
| 13 |
Explaining the formation of thin ice crystal plates with structure-dependent attachment kinetics
|
Libbrecht, Kenneth G.
|
|
2003
|
258 |
1-2 |
p. 168-175
8 p.
|
artikel
|
| 14 |
Factors affecting the graphitization behavior of the powder source during seeded sublimation growth of SiC bulk crystal
|
Li, Heqing
|
|
2003
|
258 |
1-2 |
p. 100-105
6 p.
|
artikel
|
| 15 |
Growth of cubic crystals of cobalt-hexacyanoferrate under the octadecyl amine monolayer
|
Choudhury, Sipra
|
|
2003
|
258 |
1-2 |
p. 197-203
7 p.
|
artikel
|
| 16 |
Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor
|
Bayaz, A.Al
|
|
2003
|
258 |
1-2 |
p. 135-140
6 p.
|
artikel
|
| 17 |
High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP–MOCVD
|
Zhao, Baijun
|
|
2003
|
258 |
1-2 |
p. 130-134
5 p.
|
artikel
|
| 18 |
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
|
Zhang, B.S
|
|
2003
|
258 |
1-2 |
p. 34-40
7 p.
|
artikel
|
| 19 |
Influence of magnetic field on the morphology of the andrographolide crystal from supercritical carbon dioxide extraction–crystallization
|
Chen, Kexun
|
|
2003
|
258 |
1-2 |
p. 163-167
5 p.
|
artikel
|
| 20 |
Modeling of ammonothermal growth of nitrides
|
Chen, Q.-S.
|
|
2003
|
258 |
1-2 |
p. 181-187
7 p.
|
artikel
|
| 21 |
Morphological instabilities during growth of a rough interface: AFM observations of cobbles on the (0001) face of synthetic quartz crystals
|
Kawasaki, M
|
|
2003
|
258 |
1-2 |
p. 188-196
9 p.
|
artikel
|
| 22 |
Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy
|
Dwikusuma, F
|
|
2003
|
258 |
1-2 |
p. 65-74
10 p.
|
artikel
|
| 23 |
Overgrowth on InP corrugations for 1.55μm DFB LDs by reduction of carrier gas flow in LPMOCVD
|
Park, S.W.
|
|
2003
|
258 |
1-2 |
p. 26-33
8 p.
|
artikel
|
| 24 |
Photochemical synthesis of Au and Ag nanowires on a porous aluminum oxide template
|
Zhao, Wen-Bo
|
|
2003
|
258 |
1-2 |
p. 176-180
5 p.
|
artikel
|
| 25 |
Prismatic faces of KDP crystal, kinetic and mechanism of growth from solutions
|
Alexandru, H.V.
|
|
2003
|
258 |
1-2 |
p. 149-157
9 p.
|
artikel
|
| 26 |
Solvothermal synthesis of Sb2S3 nanowires on a large scale
|
Hu, Hanmei
|
|
2003
|
258 |
1-2 |
p. 106-112
7 p.
|
artikel
|
| 27 |
Studies on single- and multi-layer InAsN quantum dots grown by solid source molecular beam epitaxy
|
Zhongzhe, Sun
|
|
2003
|
258 |
1-2 |
p. 123-129
7 p.
|
artikel
|
| 28 |
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
|
Pimpinelli, Alberto
|
|
2003
|
258 |
1-2 |
p. 1-13
13 p.
|
artikel
|
| 29 |
Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates
|
Nishio, Johji
|
|
2003
|
258 |
1-2 |
p. 113-122
10 p.
|
artikel
|
| 30 |
Vibroconvective mixing applied to vertical Bridgman growth
|
Zawilski, Kevin T
|
|
2003
|
258 |
1-2 |
p. 211-222
12 p.
|
artikel
|
Tijdschrift beschrijving