| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy
|
Luo, X.D
|
|
2003
|
247 |
1-2 |
p. 99-104
6 p.
|
artikel
|
| 2 |
A combined carbon and oxygen segregation model for the LEC growth of SI GaAs
|
Eichler, S.
|
|
2003
|
247 |
1-2 |
p. 69-76
8 p.
|
artikel
|
| 3 |
A new membrane-based crystallization technique: tests on lysozyme
|
Curcio, Efrem
|
|
2003
|
247 |
1-2 |
p. 166-176
11 p.
|
artikel
|
| 4 |
Bismuth a new dopant for GaN films grown by molecular beam epitaxy—surfactant effects, formation of GaN1−x Bi x alloys and co-doping with arsenic
|
Novikov, S.V
|
|
2003
|
247 |
1-2 |
p. 35-41
7 p.
|
artikel
|
| 5 |
Crystal–melt interface shape and dislocations during the melting of silicon
|
Wang, Yuren
|
|
2003
|
247 |
1-2 |
p. 1-12
12 p.
|
artikel
|
| 6 |
Dependence of photochromic damage on polarization in KTiOPO4 crystals
|
Hu, X.B.
|
|
2003
|
247 |
1-2 |
p. 137-140
4 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2003
|
247 |
1-2 |
p. ii-
1 p.
|
artikel
|
| 8 |
Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells
|
Kim, Sunwoon
|
|
2003
|
247 |
1-2 |
p. 62-68
7 p.
|
artikel
|
| 9 |
Electrical and optical properties of ZnO transparent conducting films by the sol–gel method
|
Lee, Jin-Hong
|
|
2003
|
247 |
1-2 |
p. 119-125
7 p.
|
artikel
|
| 10 |
Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals
|
Zhang, Shujun
|
|
2003
|
247 |
1-2 |
p. 131-136
6 p.
|
artikel
|
| 11 |
Epitaxial growth of CoO films on semiconductor and metal substrates by constructing a complex heterostructure
|
Entani, S
|
|
2003
|
247 |
1-2 |
p. 110-118
9 p.
|
artikel
|
| 12 |
Epitaxy and structural characterization of ZnSeTe layers grown on InP substrates
|
Kontos, A.G
|
|
2003
|
247 |
1-2 |
p. 17-22
6 p.
|
artikel
|
| 13 |
Formation of microtwins in TmP/GaAs heterostructures
|
Lin, C.H.
|
|
2003
|
247 |
1-2 |
p. 77-83
7 p.
|
artikel
|
| 14 |
Growth and characterization of pure and doped potassium pentaborate (KB5) single crystals
|
Rajasekar, S.A
|
|
2003
|
247 |
1-2 |
p. 199-206
8 p.
|
artikel
|
| 15 |
Growth-induced inhomogeneities in synthetic quartz crystals revealed by the cathodoluminescence method
|
Kawasaki, Masayuki
|
|
2003
|
247 |
1-2 |
p. 185-191
7 p.
|
artikel
|
| 16 |
Growth temperature effect on the optical and material properties of Al x In y Ga1−x−y N epilayers grown by MOCVD
|
Huang, J.S
|
|
2003
|
247 |
1-2 |
p. 84-90
7 p.
|
artikel
|
| 17 |
High-quality GaMnAs films grown with arsenic dimers
|
Campion, R.P
|
|
2003
|
247 |
1-2 |
p. 42-48
7 p.
|
artikel
|
| 18 |
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
|
Zhang, Z.C
|
|
2003
|
247 |
1-2 |
p. 126-130
5 p.
|
artikel
|
| 19 |
InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
|
Putyato, M.A
|
|
2003
|
247 |
1-2 |
p. 23-27
5 p.
|
artikel
|
| 20 |
Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy
|
Li, H.D.
|
|
2003
|
247 |
1-2 |
p. 28-34
7 p.
|
artikel
|
| 21 |
Luminescence characteristics of pulsed laser deposited ZnGa2O4 thin film phosphors grown on various substrates
|
Yi, S.S
|
|
2003
|
247 |
1-2 |
p. 213-218
6 p.
|
artikel
|
| 22 |
On the thermal and optical properties of ZnSe and doped ZnSe crystals grown by PVT
|
Sankar, N
|
|
2003
|
247 |
1-2 |
p. 157-165
9 p.
|
artikel
|
| 23 |
Protein crystal quality in diffusive environments and its evaluation
|
Lopez-Jaramillo, F.J
|
|
2003
|
247 |
1-2 |
p. 177-184
8 p.
|
artikel
|
| 24 |
Rapid sonocrystallization in the salting-out process
|
Li, Hong
|
|
2003
|
247 |
1-2 |
p. 192-198
7 p.
|
artikel
|
| 25 |
Reinvestigation of phase relations around the oxyapatite phase in the Nd2O3–SiO2 system
|
Masubuchi, Yuji
|
|
2003
|
247 |
1-2 |
p. 207-212
6 p.
|
artikel
|
| 26 |
Silicon nanowires grown on a pre-annealed Si substrate
|
Zeng, X.B
|
|
2003
|
247 |
1-2 |
p. 13-16
4 p.
|
artikel
|
| 27 |
Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
|
He, J
|
|
2003
|
247 |
1-2 |
p. 49-54
6 p.
|
artikel
|
| 28 |
Synthesis, crystal growth and second harmonic generation properties of trivalent rare-earth-doped non-linear tungsten–bronze-type structure Ba2Na1−3x RE x Nb5O15 (RE=Sc, Y, La, Gd, Yb and Lu)
|
Yoshikawa, A
|
|
2003
|
247 |
1-2 |
p. 148-156
9 p.
|
artikel
|
| 29 |
Synthesis of epitaxial Y-type magnetoplumbite thin films by quick optimization with combinatorial pulsed laser deposition
|
Ohkubo, I.
|
|
2003
|
247 |
1-2 |
p. 105-109
5 p.
|
artikel
|
| 30 |
The growth morphologies of GaN layer on Si(111) substrate
|
Lu, Yuan
|
|
2003
|
247 |
1-2 |
p. 91-98
8 p.
|
artikel
|
| 31 |
The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD
|
Kim, Sunwoon
|
|
2003
|
247 |
1-2 |
p. 55-61
7 p.
|
artikel
|
| 32 |
Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals
|
Klein, Olaf
|
|
2003
|
247 |
1-2 |
p. 219-235
17 p.
|
artikel
|
| 33 |
Transmission loss of lead fluoride crystals induced by oxygen contamination
|
Ren, Guohao
|
|
2003
|
247 |
1-2 |
p. 141-147
7 p.
|
artikel
|
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