| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of sublimation growth of bulk SiC crystals in tantalum container
|
Karpov, S.Yu
|
|
2000
|
211 |
1-4 |
p. 347-351
5 p.
|
artikel
|
| 2 |
A numerical model for inductively heated cylindrical silicon tube growth system
|
Roy, A
|
|
2000
|
211 |
1-4 |
p. 365-371
7 p.
|
artikel
|
| 3 |
Arsenic pressure dependence of Ga desorption from MBE high index GaAs substrates
|
Ohachi, T
|
|
2000
|
211 |
1-4 |
p. 405-410
6 p.
|
artikel
|
| 4 |
Biomineralization mechanisms: a kinetics and interfacial energy approach
|
Nancollas, George H
|
|
2000
|
211 |
1-4 |
p. 137-142
6 p.
|
artikel
|
| 5 |
Bridgman growth without crucible contact using the dewetting phenomenon
|
Duffar, T
|
|
2000
|
211 |
1-4 |
p. 434-440
7 p.
|
artikel
|
| 6 |
Bulk growth of quasi-binary quaternary alloys
|
Marı́n, C
|
|
2000
|
211 |
1-4 |
p. 194-201
8 p.
|
artikel
|
| 7 |
Carrier mobility distribution in annealed undoped LEC InP material
|
Zhao, Y.W
|
|
2000
|
211 |
1-4 |
p. 179-183
5 p.
|
artikel
|
| 8 |
Clusters and their properties in aqueous solutions of KDP, KCl and sugar
|
Li, Lian
|
|
2000
|
211 |
1-4 |
p. 286-289
4 p.
|
artikel
|
| 9 |
Crystal growth and liquid-phase epitaxy of gallium nitride
|
Klemenz, C
|
|
2000
|
211 |
1-4 |
p. 62-67
6 p.
|
artikel
|
| 10 |
Crystal growth and photoluminescence of CuIn X Ga1−X Se2 alloys
|
Yoshino, Kenji
|
|
2000
|
211 |
1-4 |
p. 476-479
4 p.
|
artikel
|
| 11 |
Crystal growth and properties of AgGaTe2
|
Schunemann, P.G
|
|
2000
|
211 |
1-4 |
p. 242-246
5 p.
|
artikel
|
| 12 |
Crystallization processes in pharmaceutical technology and drug delivery design
|
Shekunov, B.Yu
|
|
2000
|
211 |
1-4 |
p. 122-136
15 p.
|
artikel
|
| 13 |
Design of ceramic springs for use in semiconductor crystal growth in microgravity
|
Kaforey, M.L
|
|
2000
|
211 |
1-4 |
p. 421-427
7 p.
|
artikel
|
| 14 |
Developing a model for electromagnetic control of dopant segregation during liquid-encapsulated crystal growth of compound semiconductors
|
Ma, N
|
|
2000
|
211 |
1-4 |
p. 169-173
5 p.
|
artikel
|
| 15 |
Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system
|
Mauk, M.G
|
|
2000
|
211 |
1-4 |
p. 411-415
5 p.
|
artikel
|
| 16 |
Diffusion-limited crystal growth in silicate systems: similarity with high-pressure liquid-phase sintering
|
Lupulescu, A.
|
|
2000
|
211 |
1-4 |
p. 49-61
13 p.
|
artikel
|
| 17 |
Directional growth of Al-Nb-X eutectic alloys
|
Rios, Carlos Triveño
|
|
2000
|
211 |
1-4 |
p. 466-470
5 p.
|
artikel
|
| 18 |
Directional solidification processing of eutectic alloys in the Ni–Al–V system
|
Milenkovic, S
|
|
2000
|
211 |
1-4 |
p. 485-490
6 p.
|
artikel
|
| 19 |
Discerning nature's mechanism for making complex biocomposite crystals
|
Smith, Bettye L
|
|
2000
|
211 |
1-4 |
p. 116-121
6 p.
|
artikel
|
| 20 |
Distribution coefficients of protein impurities in ferritin and lysozyme crystals Self-purification in microgravity
|
Thomas, B.R.
|
|
2000
|
211 |
1-4 |
p. 149-156
8 p.
|
artikel
|
| 21 |
Distribution of Te in GaSb grown by Bridgman technique under microgravity
|
Nakamura, T
|
|
2000
|
211 |
1-4 |
p. 441-445
5 p.
|
artikel
|
| 22 |
Double crucible LEC growth of In-doped GaAs using inner crucibles with a bottom tube
|
He, J
|
|
2000
|
211 |
1-4 |
p. 163-168
6 p.
|
artikel
|
| 23 |
Dynamic simulations of interface morphologies in free dendritic growth
|
Emmerich, Heike
|
|
2000
|
211 |
1-4 |
p. 43-48
6 p.
|
artikel
|
| 24 |
Economic feeder for recharging and “topping off”
|
Fickett, Bryan
|
|
2000
|
211 |
1-4 |
p. 372-377
6 p.
|
artikel
|
| 25 |
Editorial
|
|
|
2000
|
211 |
1-4 |
p. xiii-
1 p.
|
artikel
|
| 26 |
Editorial
|
|
|
2000
|
211 |
1-4 |
p. xv-xix
nvt p.
|
artikel
|
| 27 |
Editorial
|
|
|
2000
|
211 |
1-4 |
p. xxi-
1 p.
|
artikel
|
| 28 |
Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide
|
Vorob'ev, A.N
|
|
2000
|
211 |
1-4 |
p. 343-346
4 p.
|
artikel
|
| 29 |
Effect of melt convection at various gravity levels and orientations on the forces acting on a large spherical particle in the vicinity of a solidification interface
|
Bune, Andris V.
|
|
2000
|
211 |
1-4 |
p. 446-451
6 p.
|
artikel
|
| 30 |
Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams
|
Ogura, T
|
|
2000
|
211 |
1-4 |
p. 416-420
5 p.
|
artikel
|
| 31 |
Electrochemical growth near the Ba1−x K x BiO3 (x>0.5)–Ba1.7K1.3Bi2O7 boundary and the crystals properties
|
Shiryaev, S.V
|
|
2000
|
211 |
1-4 |
p. 471-475
5 p.
|
artikel
|
| 32 |
Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates
|
Schowalter, L.J
|
|
2000
|
211 |
1-4 |
p. 78-81
4 p.
|
artikel
|
| 33 |
Epitaxial growth of oxides with pulsed laser interval deposition
|
Blank, Dave H.A
|
|
2000
|
211 |
1-4 |
p. 98-105
8 p.
|
artikel
|
| 34 |
Fabrication of submicrometer structures by PSE/MBE
|
Bacchin, G
|
|
2000
|
211 |
1-4 |
p. 389-394
6 p.
|
artikel
|
| 35 |
Flux growth and characterization of Cr4+ :Ca2GeO4 crystals as a new near infrared tunable laser material
|
Bykov, A.B
|
|
2000
|
211 |
1-4 |
p. 295-301
7 p.
|
artikel
|
| 36 |
Flux growth of (Y,RE)Al3(BO3)4 solid solutions (RE=Nd, Gd, Ho, Yb, Lu)
|
Koporulina, E.V.
|
|
2000
|
211 |
1-4 |
p. 491-496
6 p.
|
artikel
|
| 37 |
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
|
Selder, M.
|
|
2000
|
211 |
1-4 |
p. 333-338
6 p.
|
artikel
|
| 38 |
Ground and space processing of single-crystalline organic thin films
|
Carswell, William E
|
|
2000
|
211 |
1-4 |
p. 428-433
6 p.
|
artikel
|
| 39 |
Growth and characterisation of l-tyrosine-doped TGS crystals
|
Meera, K
|
|
2000
|
211 |
1-4 |
p. 220-224
5 p.
|
artikel
|
| 40 |
Growth and characterization of high-purity SiC single crystals
|
Augustine, G
|
|
2000
|
211 |
1-4 |
p. 339-342
4 p.
|
artikel
|
| 41 |
Growth and light yield performance of dense Ce3+-doped (Lu,Y)AlO3 solid solution crystals
|
Petrosyan, A.G
|
|
2000
|
211 |
1-4 |
p. 252-256
5 p.
|
artikel
|
| 42 |
Growth dynamics of InGaAs by MBE: process simulation and theoretical analysis
|
Colayni, Golshan
|
|
2000
|
211 |
1-4 |
p. 21-26
6 p.
|
artikel
|
| 43 |
Growth of a 3″ langasite crystal with clear faceting
|
Uda, Satoshi
|
|
2000
|
211 |
1-4 |
p. 318-324
7 p.
|
artikel
|
| 44 |
Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method
|
Birkmann, B
|
|
2000
|
211 |
1-4 |
p. 157-162
6 p.
|
artikel
|
| 45 |
Growth of Ce-doped LiCaAlF6 and LiSrAlF6 single crystals by the Czochralski technique under CF4 atmosphere
|
Shimamura, Kiyoshi
|
|
2000
|
211 |
1-4 |
p. 302-307
6 p.
|
artikel
|
| 46 |
Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle
|
Marı́n, C
|
|
2000
|
211 |
1-4 |
p. 378-383
6 p.
|
artikel
|
| 47 |
Growth of inclusion-free InSb crystals by vertical Bridgman method
|
Mohan, Premila
|
|
2000
|
211 |
1-4 |
p. 207-210
4 p.
|
artikel
|
| 48 |
Growth of large size LBO (Li2B4O7) single crystals by modified Bridgman technique
|
Tsutsui, N
|
|
2000
|
211 |
1-4 |
p. 271-275
5 p.
|
artikel
|
| 49 |
Growth of paratellurite crystals: effect of axial temperature gradient on the quality of the crystals
|
Kumaragurubaran, S
|
|
2000
|
211 |
1-4 |
p. 276-280
5 p.
|
artikel
|
| 50 |
Growth of potassium lithium niobate (KLN) single crystals for second harmonic generation (SHG) application
|
Li, Lian
|
|
2000
|
211 |
1-4 |
p. 281-285
5 p.
|
artikel
|
| 51 |
Growth of single crystals belonging to a family of one-dimensional oxides: commensurate and incommensurate structures
|
zur Loye, Hans-Conrad
|
|
2000
|
211 |
1-4 |
p. 452-457
6 p.
|
artikel
|
| 52 |
Growth of superconducting (M2Cu2O3) m (CuO2) n crystals
|
Maltsev, V
|
|
2000
|
211 |
1-4 |
p. 501-505
5 p.
|
artikel
|
| 53 |
H-dependent magnetic domain structures in La0.67Sr0.33MnO3 thin films
|
Hawley, M.E.
|
|
2000
|
211 |
1-4 |
p. 86-92
7 p.
|
artikel
|
| 54 |
High-temperature solution growth of Cr2+ :CdSe for tunable mid-IR laser application
|
Ndap, J.-O
|
|
2000
|
211 |
1-4 |
p. 290-294
5 p.
|
artikel
|
| 55 |
Historical aspects of crystal growth technology
|
Scheel, Hans J
|
|
2000
|
211 |
1-4 |
p. 1-12
12 p.
|
artikel
|
| 56 |
H-vacancy complex VInH4 abundance and its influences in n-type LEC InP
|
Fung, S
|
|
2000
|
211 |
1-4 |
p. 174-178
5 p.
|
artikel
|
| 57 |
Hydrothermal growth and morphology of calcite single crystals
|
Nefyodova, I.V
|
|
2000
|
211 |
1-4 |
p. 458-460
3 p.
|
artikel
|
| 58 |
Hydrothermal synthesis of lead titanate from complexed precursor solutions
|
Gelabert, M.C
|
|
2000
|
211 |
1-4 |
p. 497-500
4 p.
|
artikel
|
| 59 |
InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition
|
Biefeld, R.M
|
|
2000
|
211 |
1-4 |
p. 400-404
5 p.
|
artikel
|
| 60 |
Index
|
|
|
2000
|
211 |
1-4 |
p. 509-515
7 p.
|
artikel
|
| 61 |
Index
|
|
|
2000
|
211 |
1-4 |
p. 516-517
2 p.
|
artikel
|
| 62 |
Influence of Ce and Co doping ions on photorefractive effect of SBN:61 crystals
|
Li, Minghua
|
|
2000
|
211 |
1-4 |
p. 225-229
5 p.
|
artikel
|
| 63 |
Investigation of vibrational control of convective flows in Bridgman melt growth configurations
|
Fedoseyev, Alexandre I
|
|
2000
|
211 |
1-4 |
p. 34-42
9 p.
|
artikel
|
| 64 |
Liquid-phase epitaxy of low-bandgap III–V antimonides for thermophotovoltaic devices
|
Mauk, M.G
|
|
2000
|
211 |
1-4 |
p. 189-193
5 p.
|
artikel
|
| 65 |
Low-pressure deposition of diamond by electron cyclotron resonance microwave plasma chemical vapor deposition
|
Chiang, M.J
|
|
2000
|
211 |
1-4 |
p. 216-219
4 p.
|
artikel
|
| 66 |
Melt growth of non-isoaxial bicrystals of an Fe–3%Si alloy
|
Adámek, J
|
|
2000
|
211 |
1-4 |
p. 461-465
5 p.
|
artikel
|
| 67 |
Modeling grain boundaries using a phase-field technique
|
Warren, James A
|
|
2000
|
211 |
1-4 |
p. 18-20
3 p.
|
artikel
|
| 68 |
Modeling of silicon carbide crystal growth by physical vapor transport method
|
Ma, R.-H
|
|
2000
|
211 |
1-4 |
p. 352-359
8 p.
|
artikel
|
| 69 |
Monte Carlo modeling of silicon crystal growth
|
Beatty, Kirk M
|
|
2000
|
211 |
1-4 |
p. 13-17
5 p.
|
artikel
|
| 70 |
Morphology of TSSG grown potassium lithium niobate (KLN) crystal in relation to its structure and growth conditions
|
Xu, X.W
|
|
2000
|
211 |
1-4 |
p. 265-270
6 p.
|
artikel
|
| 71 |
Nucleation and growth of supported metal clusters at defect sites on oxide and halide (001) surfaces
|
Venables, J.A.
|
|
2000
|
211 |
1-4 |
p. 27-33
7 p.
|
artikel
|
| 72 |
On mechanisms of sublimation growth of AlN bulk crystals
|
Segal, A.S
|
|
2000
|
211 |
1-4 |
p. 68-72
5 p.
|
artikel
|
| 73 |
Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source
|
Naritsuka, Shigeya
|
|
2000
|
211 |
1-4 |
p. 395-399
5 p.
|
artikel
|
| 74 |
Patterned crystallization of calcite in vivo and in vitro
|
Aizenberg, Joanna
|
|
2000
|
211 |
1-4 |
p. 143-148
6 p.
|
artikel
|
| 75 |
Phase-matched crystal growth of AgGaSe2 and AgGa1−x In x Se2
|
Schunemann, Peter G
|
|
2000
|
211 |
1-4 |
p. 257-264
8 p.
|
artikel
|
| 76 |
Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell
|
Zhang, D.H
|
|
2000
|
211 |
1-4 |
p. 384-388
5 p.
|
artikel
|
| 77 |
Preparation and characterization of sol–gel derived potassium lithium niobate films
|
Zhang, Hongxi
|
|
2000
|
211 |
1-4 |
p. 82-85
4 p.
|
artikel
|
| 78 |
Preparation, microstructural and electrical characterization of SrVO3 single crystal fiber
|
Reyes Ardila, D
|
|
2000
|
211 |
1-4 |
p. 313-317
5 p.
|
artikel
|
| 79 |
Pressure effects in ZnO films using off-axis sputtering deposition
|
Zhu, Shen
|
|
2000
|
211 |
1-4 |
p. 106-110
5 p.
|
artikel
|
| 80 |
Process modeling of the industrial VGF growth process using the software package CrysVUN++
|
Backofen, R
|
|
2000
|
211 |
1-4 |
p. 202-206
5 p.
|
artikel
|
| 81 |
Seeded growth from flux and neutron study of La1−x Ba x MnO3 (0.2<x<0.5) single crystals
|
Barilo, S.N.
|
|
2000
|
211 |
1-4 |
p. 480-484
5 p.
|
artikel
|
| 82 |
Structural studies on synthesised gallium nitride
|
Senthil Kumar, M
|
|
2000
|
211 |
1-4 |
p. 184-188
5 p.
|
artikel
|
| 83 |
Structure and morphology of phthalocyanine films grown in electrical fields by vapor deposition
|
Zhu, Shen
|
|
2000
|
211 |
1-4 |
p. 308-312
5 p.
|
artikel
|
| 84 |
Studying of transparent conductive ZnO:Al thin films by RF reactive magnetron sputtering
|
Chang, J.F
|
|
2000
|
211 |
1-4 |
p. 93-97
5 p.
|
artikel
|
| 85 |
Synthesis and solubility of GaPO4 crystals in acid solutions under hydrothermal conditions
|
Motchany, A.I.
|
|
2000
|
211 |
1-4 |
p. 506-508
3 p.
|
artikel
|
| 86 |
Synthesis of a new hydroxyapatite-silica composite material
|
Villacampa, Ana I
|
|
2000
|
211 |
1-4 |
p. 111-115
5 p.
|
artikel
|
| 87 |
The correlation of MgO-doped near-stoichiometric LiNbO3 composition to the defect structure
|
Furukawa, Y
|
|
2000
|
211 |
1-4 |
p. 230-236
7 p.
|
artikel
|
| 88 |
The influence of thermoelectromagnetic convection (TEMC) on the Bridgman growth of semiconductors
|
Yesilyurt, Serhat
|
|
2000
|
211 |
1-4 |
p. 360-364
5 p.
|
artikel
|
| 89 |
Thermal stability of the Pb(Zn1/3Nb2/3)O3-PbTiO3 [PZNT91/9] and Pb(Mg1/3Nb2/3)O3-PbTiO3 [PMNT68/32] single crystals
|
Ye, Z.-G
|
|
2000
|
211 |
1-4 |
p. 247-251
5 p.
|
artikel
|
| 90 |
The status of SiC bulk growth from an industrial point of view
|
Müller, St.G.
|
|
2000
|
211 |
1-4 |
p. 325-332
8 p.
|
artikel
|
| 91 |
Vapor-phase epitaxial lateral overgrowth of ZnSe on GaAs
|
Mauk, Michael G.
|
|
2000
|
211 |
1-4 |
p. 73-77
5 p.
|
artikel
|
| 92 |
X-ray photoelectron spectroscopy investigation of substrate surface pretreatments for diamond nucleation by microwave plasma chemical vapor deposition
|
Chiang, Ming-Jeng
|
|
2000
|
211 |
1-4 |
p. 211-215
5 p.
|
artikel
|
| 93 |
YVO4 single-crystal fiber growth by the LHPG method
|
Huang, Chen-Hung
|
|
2000
|
211 |
1-4 |
p. 237-241
5 p.
|
artikel
|
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