| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An interferometric study of the solubility of lysozyme crystals under high pressure
|
Suzuki, Yoshihisa
|
|
2000
|
209 |
4 |
p. 1018-1022
5 p.
|
artikel
|
| 2 |
Atmospheric pressure vapor-phase growth of ZnO using a chloride source
|
Takahashi, Naoyuki
|
|
2000
|
209 |
4 |
p. 822-827
6 p.
|
artikel
|
| 3 |
Atomic force microscopy studies on the surface morphology of {111} tabular AgBr crystals
|
Plomp, M
|
|
2000
|
209 |
4 |
p. 911-923
13 p.
|
artikel
|
| 4 |
Cation effects during aggregation and agglomeration of gibbsite particles under synthetic Bayer crystallisation conditions
|
Prestidge, Clive A.
|
|
2000
|
209 |
4 |
p. 924-933
10 p.
|
artikel
|
| 5 |
Characteristics of the GaInP burying layers grown by metalorganic chemical vapor deposition on mesa-patterned GaAs substrates
|
Tateno, K.
|
|
2000
|
209 |
4 |
p. 605-613
9 p.
|
artikel
|
| 6 |
Characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy using deep level transient spectroscopy
|
Yoon, S.F.
|
|
2000
|
209 |
4 |
p. 653-660
8 p.
|
artikel
|
| 7 |
Crystal growth of ammonium chloride in magnetic levitation conditions
|
Hamai, M.
|
|
2000
|
209 |
4 |
p. 1013-1017
5 p.
|
artikel
|
| 8 |
Crystallization of diamond from C–O–H fluids under high-pressure and high-temperature conditions
|
Akaishi, Minoru
|
|
2000
|
209 |
4 |
p. 999-1003
5 p.
|
artikel
|
| 9 |
Crystal structures and magnetic properties of MnAs grown by molecular-beam epitaxy on the (111)A facets of V-grooved GaAs substrates
|
Morishita, Y.
|
|
2000
|
209 |
4 |
p. 599-604
6 p.
|
artikel
|
| 10 |
Decagonal quasicrystal growth in the undercooled Al72Ni12Co16 alloy
|
Liu, Y.C
|
|
2000
|
209 |
4 |
p. 963-969
7 p.
|
artikel
|
| 11 |
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
|
Fini, P
|
|
2000
|
209 |
4 |
p. 581-590
10 p.
|
artikel
|
| 12 |
Die optimal shape in a crystal growth process
|
Despréaux, Stéphane
|
|
2000
|
209 |
4 |
p. 983-993
11 p.
|
artikel
|
| 13 |
Effect of accelerated crucible rotation on melt composition in high-pressure vertical Bridgman growth of cadmium zinc telluride
|
Yeckel, Andrew
|
|
2000
|
209 |
4 |
p. 734-750
17 p.
|
artikel
|
| 14 |
Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication
|
Kishimoto, D.
|
|
2000
|
209 |
4 |
p. 591-598
8 p.
|
artikel
|
| 15 |
Epitaxial growth of Y-stabilised zirconia films on (100)InP substrates by pulsed laser deposition
|
Vasco, E.
|
|
2000
|
209 |
4 |
p. 883-889
7 p.
|
artikel
|
| 16 |
Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface
|
Saito, Takao
|
|
2000
|
209 |
4 |
p. 666-674
9 p.
|
artikel
|
| 17 |
Growth and characterization of Cd1−x Zn x Te crystals with high Zn concentrations
|
Pérez Bueno, J.J
|
|
2000
|
209 |
4 |
p. 701-708
8 p.
|
artikel
|
| 18 |
Growth and characterization of nanostructured β-SiC via carbothermal reduction of SiO2 xerogels containing carbon nanoparticles
|
Meng, G.W
|
|
2000
|
209 |
4 |
p. 801-806
6 p.
|
artikel
|
| 19 |
Growth and characterization of strained superlattices δ-GaN x As1−x /GaAs by molecular beam epitaxy
|
Pan, Z
|
|
2000
|
209 |
4 |
p. 648-652
5 p.
|
artikel
|
| 20 |
Growth and properties of YAlO3 :Nd single crystals
|
Savytskii, D.I
|
|
2000
|
209 |
4 |
p. 874-882
9 p.
|
artikel
|
| 21 |
Growth of InSb on GaAs using InAlSb buffer layers
|
Biefeld, R.M
|
|
2000
|
209 |
4 |
p. 567-571
5 p.
|
artikel
|
| 22 |
Growth of LiY(1−x−y)Lu x Nd y F4 crystals for optical applications
|
Ranieri, I.M.
|
|
2000
|
209 |
4 |
p. 906-910
5 p.
|
artikel
|
| 23 |
Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP
|
Walther, C.
|
|
2000
|
209 |
4 |
p. 572-580
9 p.
|
artikel
|
| 24 |
Growth temperature dependence of substitutional carbon incorporation in Si1−y C y alloys and Si1−yCy/Si multiple quantum wells
|
Jeong, M.S
|
|
2000
|
209 |
4 |
p. 789-794
6 p.
|
artikel
|
| 25 |
Impurity reduction and crystalline quality improvement due to isovalent doping (In) in GaAs epilayers on Si substrate by chemical beam epitaxy
|
Saravanan, S
|
|
2000
|
209 |
4 |
p. 621-624
4 p.
|
artikel
|
| 26 |
Index
|
|
|
2000
|
209 |
4 |
p. 1024-1035
12 p.
|
artikel
|
| 27 |
Index
|
|
|
2000
|
209 |
4 |
p. 1036-1038
3 p.
|
artikel
|
| 28 |
Influences of off-angle and off-direction of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(110) substrates by molecular-beam epitaxy
|
Yodo, Tokuo
|
|
2000
|
209 |
4 |
p. 724-733
10 p.
|
artikel
|
| 29 |
In situ observation of ellipsometry monolayer oscillations of metalorganic vapor-phase epitaxy-grown III–V compound materials
|
Lee, Jeong-Sik
|
|
2000
|
209 |
4 |
p. 614-620
7 p.
|
artikel
|
| 30 |
In situ partial pressure measurements and visual observation during crystal growth of ZnSe by seeded physical vapor transport
|
Su, Ching-Hua
|
|
2000
|
209 |
4 |
p. 687-694
8 p.
|
artikel
|
| 31 |
Instability of diborane gas in silicon epitaxial film growth
|
Habuka, Hitoshi
|
|
2000
|
209 |
4 |
p. 807-815
9 p.
|
artikel
|
| 32 |
Laser damage from harmful impurities in meta-barium borate crystal
|
Tan, Qiguang
|
|
2000
|
209 |
4 |
p. 861-866
6 p.
|
artikel
|
| 33 |
Luminescence and color centers from CNGG:Cr3+ crystal grown by Czochralski method
|
Li, Yunkui
|
|
2000
|
209 |
4 |
p. 867-873
7 p.
|
artikel
|
| 34 |
MBE growth of high-quality ZnO films on epi-GaN
|
Ju Ko, Hang
|
|
2000
|
209 |
4 |
p. 816-821
6 p.
|
artikel
|
| 35 |
MBE growth of wide band gap Pb1−x Sr x Se on Si(111) substrate
|
Xu, G
|
|
2000
|
209 |
4 |
p. 763-766
4 p.
|
artikel
|
| 36 |
Microstructural study of Bi2Te3 material obtained by ultrarapid quenching process route
|
Koukharenko, E.
|
|
2000
|
209 |
4 |
p. 773-778
6 p.
|
artikel
|
| 37 |
Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy
|
Fukuto, H.
|
|
2000
|
209 |
4 |
p. 716-723
8 p.
|
artikel
|
| 38 |
Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (113)B InP substrates
|
Fréchengues, S
|
|
2000
|
209 |
4 |
p. 661-665
5 p.
|
artikel
|
| 39 |
Multi-step pulling of GaInSb bulk crystal from ternary solution
|
Tanaka, Akira
|
|
2000
|
209 |
4 |
p. 625-629
5 p.
|
artikel
|
| 40 |
Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivatives
|
Pohl, Udo W
|
|
2000
|
209 |
4 |
p. 683-686
4 p.
|
artikel
|
| 41 |
Nonstoichiometric KY(WO4)2: crystal growth, chemical and physical characterization
|
Gallucci, E.
|
|
2000
|
209 |
4 |
p. 895-905
11 p.
|
artikel
|
| 42 |
Numerical analysis on Hg1−x Cd x Te growth by ACRT-VBM
|
Liu, Xiaohua
|
|
2000
|
209 |
4 |
p. 751-762
12 p.
|
artikel
|
| 43 |
On the properties of large banded spherulites in a maleic anhydride–polyacrylonitrile mixture
|
Degen, Michael M
|
|
2000
|
209 |
4 |
p. 953-962
10 p.
|
artikel
|
| 44 |
Phase equilibria in the binary systems Li2O–B2O3 and Cs2O–B2O3
|
Kaplun, A.B.
|
|
2000
|
209 |
4 |
p. 890-894
5 p.
|
artikel
|
| 45 |
Rapid enlargement of SiC single crystal using a cone-shaped platform
|
Bahng, W
|
|
2000
|
209 |
4 |
p. 767-772
6 p.
|
artikel
|
| 46 |
Se and Zn vapor pressure control in ZnSe single crystal growth by the sublimation method
|
Tamura, Hitoshi
|
|
2000
|
209 |
4 |
p. 675-682
8 p.
|
artikel
|
| 47 |
Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy
|
Chen, Y.
|
|
2000
|
209 |
4 |
p. 994-998
5 p.
|
artikel
|
| 48 |
Silicon quantum dot nucleation on Si3N4, SiO2 and SiO x N y substrates for nanoelectronic devices
|
Baron, T.
|
|
2000
|
209 |
4 |
p. 1004-1008
5 p.
|
artikel
|
| 49 |
Simulation of vertical Bridgman growth of benzene, a material with anisotropic solid-phase thermal conductivity
|
Lee, Hanjie
|
|
2000
|
209 |
4 |
p. 934-952
19 p.
|
artikel
|
| 50 |
SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursor
|
Shin, Dong Suk
|
|
2000
|
209 |
4 |
p. 1009-1012
4 p.
|
artikel
|
| 51 |
Stability of Ba(B0.9Al0.1)2O4 molten zone by floating-zone technique on the ground
|
Jia, X
|
|
2000
|
209 |
4 |
p. 850-854
5 p.
|
artikel
|
| 52 |
Study of morphological behavior of single diamond crystals
|
Bühler, Jürgen
|
|
2000
|
209 |
4 |
p. 779-788
10 p.
|
artikel
|
| 53 |
Study of the effect of dislocations introduced by indentation on Cd(111) and Te( 1 ̄ 1 ̄ 1 ̄ ) faces on the electrical and optical properties of CdTe
|
Guergouri, K
|
|
2000
|
209 |
4 |
p. 709-715
7 p.
|
artikel
|
| 54 |
Study on the solid state reaction between crystalline Co film and Si(111) substrate
|
Liu, Jifeng
|
|
2000
|
209 |
4 |
p. 795-800
6 p.
|
artikel
|
| 55 |
Synthesis, growth and characterization of bismuth tellurite crystals
|
Kumaragurubaran, S
|
|
2000
|
209 |
4 |
p. 855-860
6 p.
|
artikel
|
| 56 |
Tailoring of nanocrystal sizes in CdSe films prepared by chemical deposition
|
Trojánek, F
|
|
2000
|
209 |
4 |
p. 695-700
6 p.
|
artikel
|
| 57 |
Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution
|
Wang, H.L
|
|
2000
|
209 |
4 |
p. 630-636
7 p.
|
artikel
|
| 58 |
The influence of convection on the duration of the initial solute transient in alloy crystal growth
|
Garandet, J.P.
|
|
2000
|
209 |
4 |
p. 970-982
13 p.
|
artikel
|
| 59 |
Thickness dependence of stable structure of the Stranski–Krastanov mode in the GaPSb/GaP system
|
Nakajima, Kazuo
|
|
2000
|
209 |
4 |
p. 637-647
11 p.
|
artikel
|
| 60 |
X-ray diffraction study of lattice engineered manganite magnetoresistive films
|
Trtı́k, V.
|
|
2000
|
209 |
4 |
p. 842-849
8 p.
|
artikel
|
| 61 |
ZrO2–CeO2 and CeO2–La2O3 film growth on oxide substrates and their applications in oxide heterostructures
|
Khodan, A.N
|
|
2000
|
209 |
4 |
p. 828-841
14 p.
|
artikel
|
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