| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alternative N-, P- and As-precursors for III/V-epitaxy
|
Stolz, W
|
|
2000
|
209 |
2-3 |
p. 272-278
7 p.
|
artikel
|
| 2 |
Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy
|
Li, Wei
|
|
2000
|
209 |
2-3 |
p. 459-462
4 p.
|
artikel
|
| 3 |
CBE and MOCVD growth of GaInNAs
|
Miyamoto, T
|
|
2000
|
209 |
2-3 |
p. 339-344
6 p.
|
artikel
|
| 4 |
CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine
|
Sasaki, M
|
|
2000
|
209 |
2-3 |
p. 373-377
5 p.
|
artikel
|
| 5 |
Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD
|
Tanaka, Y
|
|
2000
|
209 |
2-3 |
p. 410-414
5 p.
|
artikel
|
| 6 |
Comparison of structural and optical properties in strained GaInAsP MQW structures grown by MOVPE and MOMBE
|
Kröner, P
|
|
2000
|
209 |
2-3 |
p. 424-430
7 p.
|
artikel
|
| 7 |
Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry
|
Hong, Soon-Ku
|
|
2000
|
209 |
2-3 |
p. 537-541
5 p.
|
artikel
|
| 8 |
Development of GaAs space solar cells by high growth rate MOMBE/CBE
|
Freundlich, A
|
|
2000
|
209 |
2-3 |
p. 481-485
5 p.
|
artikel
|
| 9 |
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe
|
Prete, P
|
|
2000
|
209 |
2-3 |
p. 279-285
7 p.
|
artikel
|
| 10 |
Dynamic behavior of group III and V organometallic sources and nanostructure fabrication by supersonic molecular beams
|
Cui, Jie
|
|
2000
|
209 |
2-3 |
p. 492-498
7 p.
|
artikel
|
| 11 |
Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice
|
Georgiev, Nikolai
|
|
2000
|
209 |
2-3 |
p. 247-251
5 p.
|
artikel
|
| 12 |
Effects of oxygen plasma condition on MBE growth of ZnO
|
Sakurai, Keiichiro
|
|
2000
|
209 |
2-3 |
p. 522-525
4 p.
|
artikel
|
| 13 |
Electrical and optical characterization of (111) oriented GaP/Si diodes grown by CBE
|
Ohlsson, B.J.
|
|
2000
|
209 |
2-3 |
p. 454-458
5 p.
|
artikel
|
| 14 |
Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy
|
Morishima, Shinichi
|
|
2000
|
209 |
2-3 |
p. 378-381
4 p.
|
artikel
|
| 15 |
Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
|
Otsuka, Nobuyuki
|
|
2000
|
209 |
2-3 |
p. 252-257
6 p.
|
artikel
|
| 16 |
Fabrication of InGaAs quantum dots on GaAs(001) by droplet epitaxy
|
Mano, T
|
|
2000
|
209 |
2-3 |
p. 504-508
5 p.
|
artikel
|
| 17 |
Fabrication of selectively grown II–VI widegap semiconductor photonic dots on (001)GaAs with MOMBE
|
Ueta, A
|
|
2000
|
209 |
2-3 |
p. 518-521
4 p.
|
artikel
|
| 18 |
Formation and structural investigation of MnSb dots on S-passivated GaAs(001) substrates
|
Mizuguchi, M
|
|
2000
|
209 |
2-3 |
p. 552-555
4 p.
|
artikel
|
| 19 |
Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE
|
Leys, M.R
|
|
2000
|
209 |
2-3 |
p. 225-231
7 p.
|
artikel
|
| 20 |
Gas-source MBE growth of Tl-based III–V semiconductors and their Raman scattering characterization
|
Zhou, Y.K
|
|
2000
|
209 |
2-3 |
p. 547-551
5 p.
|
artikel
|
| 21 |
Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy
|
Ferro, Gabriel
|
|
2000
|
209 |
2-3 |
p. 415-418
4 p.
|
artikel
|
| 22 |
Growth mode of thin Si1−x Ge x films on Si (100) monitored by spectroscopic ellipsometry
|
Akazawa, Housei
|
|
2000
|
209 |
2-3 |
p. 311-314
4 p.
|
artikel
|
| 23 |
Growth of novel InP-based materials by He-plasma-assisted epitaxy
|
Pinkney, H
|
|
2000
|
209 |
2-3 |
p. 237-241
5 p.
|
artikel
|
| 24 |
Growth of ZnSe single crystals
|
Fang, C.S
|
|
2000
|
209 |
2-3 |
p. 542-546
5 p.
|
artikel
|
| 25 |
Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma
|
Inushima, T
|
|
2000
|
209 |
2-3 |
p. 406-409
4 p.
|
artikel
|
| 26 |
High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy
|
Kimura, Ryuhei
|
|
2000
|
209 |
2-3 |
p. 382-386
5 p.
|
artikel
|
| 27 |
Improved properties of polycrystalline GaN grown on silica glass substrate
|
Hiroki, M
|
|
2000
|
209 |
2-3 |
p. 387-391
5 p.
|
artikel
|
| 28 |
Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process
|
Matsuzaki, Yuichi
|
|
2000
|
209 |
2-3 |
p. 509-512
4 p.
|
artikel
|
| 29 |
Initial growth monitoring of GaN epitaxy on 6H-SiC by metal-organic molecular beam epitaxy
|
Honda, Tohru
|
|
2000
|
209 |
2-3 |
p. 392-395
4 p.
|
artikel
|
| 30 |
In situ etching using a novel precursor of tertiarybutylchloride (TBCl)
|
Kondow, Masahiko
|
|
2000
|
209 |
2-3 |
p. 263-266
4 p.
|
artikel
|
| 31 |
In situ optical monitoring for SiGe epitaxy
|
Robbins, D.J
|
|
2000
|
209 |
2-3 |
p. 290-296
7 p.
|
artikel
|
| 32 |
Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)
|
Balmer, R.S
|
|
2000
|
209 |
2-3 |
p. 486-491
6 p.
|
artikel
|
| 33 |
Interferometric wavelength converter operating at 10Gb/s based on a monolithic-integrated photonic circuit
|
Rigo, C
|
|
2000
|
209 |
2-3 |
p. 471-475
5 p.
|
artikel
|
| 34 |
Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
|
Benchimol, J.L.
|
|
2000
|
209 |
2-3 |
p. 476-480
5 p.
|
artikel
|
| 35 |
Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy
|
Shen, X.Q
|
|
2000
|
209 |
2-3 |
p. 396-400
5 p.
|
artikel
|
| 36 |
Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahigh vacuum system
|
Ohtsuka, K
|
|
2000
|
209 |
2-3 |
p. 331-334
4 p.
|
artikel
|
| 37 |
Magic numbers in Ga clusters on GaAs (001) surface
|
Tsukamoto, Shiro
|
|
2000
|
209 |
2-3 |
p. 258-262
5 p.
|
artikel
|
| 38 |
Mechanism analysis of improved GaInNAs optical properties through thermal annealing
|
Kitatani, T.
|
|
2000
|
209 |
2-3 |
p. 345-349
5 p.
|
artikel
|
| 39 |
Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs
|
Ono, K
|
|
2000
|
209 |
2-3 |
p. 556-560
5 p.
|
artikel
|
| 40 |
Molecular dynamics simulation of III–V compound semiconductor growth with MBE
|
Nakamura, M.
|
|
2000
|
209 |
2-3 |
p. 232-236
5 p.
|
artikel
|
| 41 |
MOMBE selective infill growth of InP/GaInAs for quantum dot formation
|
Gibis, R
|
|
2000
|
209 |
2-3 |
p. 499-503
5 p.
|
artikel
|
| 42 |
MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits
|
Gibis, R
|
|
2000
|
209 |
2-3 |
p. 463-470
8 p.
|
artikel
|
| 43 |
New approach to low-temperature Si epitaxy by using hot wire cell method
|
Watahiki, Tatsuro
|
|
2000
|
209 |
2-3 |
p. 335-338
4 p.
|
artikel
|
| 44 |
Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE
|
Iwata, K
|
|
2000
|
209 |
2-3 |
p. 526-531
6 p.
|
artikel
|
| 45 |
Observation and control of surface reaction during Si molecular layer growth
|
Nishizawa, J
|
|
2000
|
209 |
2-3 |
p. 327-330
4 p.
|
artikel
|
| 46 |
Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD
|
Han, Ping
|
|
2000
|
209 |
2-3 |
p. 315-320
6 p.
|
artikel
|
| 47 |
Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy
|
Kageyama, Takeo
|
|
2000
|
209 |
2-3 |
p. 350-354
5 p.
|
artikel
|
| 48 |
Optical second harmonic generation studies of epitaxial growth of Si and SiGe
|
Tok, E.S
|
|
2000
|
209 |
2-3 |
p. 297-301
5 p.
|
artikel
|
| 49 |
Optimum thermal-cleaning condition of GaAs surface with a superior arsenic source: trisdimethylamino-arsine
|
Suemasu, T
|
|
2000
|
209 |
2-3 |
p. 267-271
5 p.
|
artikel
|
| 50 |
Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
|
Mozume, Teruo
|
|
2000
|
209 |
2-3 |
p. 445-449
5 p.
|
artikel
|
| 51 |
Photoluminescence of GaAs grown by metallorganic molecular beam epitaxy in space ultra-vacuum
|
Freundlich, A
|
|
2000
|
209 |
2-3 |
p. 435-439
5 p.
|
artikel
|
| 52 |
Plasma-assisted molecular beam epitaxy of GaN:In film on sapphire(0001) having the single polarity of (0001)
|
Sonoda, Saki
|
|
2000
|
209 |
2-3 |
p. 364-367
4 p.
|
artikel
|
| 53 |
Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE
|
Ouchi, K
|
|
2000
|
209 |
2-3 |
p. 242-246
5 p.
|
artikel
|
| 54 |
Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surface
|
Price, R.W.
|
|
2000
|
209 |
2-3 |
p. 306-310
5 p.
|
artikel
|
| 55 |
Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers
|
Kizuki, Hirotaka
|
|
2000
|
209 |
2-3 |
p. 440-444
5 p.
|
artikel
|
| 56 |
RF MBE growth of quasi-InGaN alloys by using multilayer structure
|
Cho, Sung Hwan
|
|
2000
|
209 |
2-3 |
p. 401-405
5 p.
|
artikel
|
| 57 |
RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence
|
Tok, E.S
|
|
2000
|
209 |
2-3 |
p. 321-326
6 p.
|
artikel
|
| 58 |
Structural characterization of Al1−x In x N lattice-matched to GaN
|
Kariya, Michihiko
|
|
2000
|
209 |
2-3 |
p. 419-423
5 p.
|
artikel
|
| 59 |
Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopy
|
Araki, T
|
|
2000
|
209 |
2-3 |
p. 368-372
5 p.
|
artikel
|
| 60 |
Structural dependence of intersubband absorption of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP
|
Katayama, T
|
|
2000
|
209 |
2-3 |
p. 450-453
4 p.
|
artikel
|
| 61 |
Structure of clean and arsenic-covered GaN(0001) surfaces
|
Ramachandran, V
|
|
2000
|
209 |
2-3 |
p. 355-363
9 p.
|
artikel
|
| 62 |
Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide
|
Coward, K.M
|
|
2000
|
209 |
2-3 |
p. 286-289
4 p.
|
artikel
|
| 63 |
The effect of S- and Se-passivation on MBE growth of MnAs thin films on GaAs(100) substrates
|
Uragami, T
|
|
2000
|
209 |
2-3 |
p. 561-565
5 p.
|
artikel
|
| 64 |
The growth mechanism of silicon nanowires and their quantum confinement effect
|
Feng, S.Q.
|
|
2000
|
209 |
2-3 |
p. 513-517
5 p.
|
artikel
|
| 65 |
The measurement of work function on GaAs (001) surface during MBE growth by scanning electron microscopy
|
Higashino, T
|
|
2000
|
209 |
2-3 |
p. 431-434
4 p.
|
artikel
|
| 66 |
Transition from “dome” to “pyramid” shape of self-assembled GeSi islands
|
Vostokov, N.V
|
|
2000
|
209 |
2-3 |
p. 302-305
4 p.
|
artikel
|
| 67 |
Uniaxial locked growth of high-quality epitaxial ZnO films on (11 2 ̄ 0)α-Al2O3
|
Fons, P
|
|
2000
|
209 |
2-3 |
p. 532-536
5 p.
|
artikel
|
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