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                             29 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A hydrothermal method for low-temperature growth of nanocrystalline pyrite nickel diselenide Zhang, Weixin
2000
209 1 p. 213-216
4 p.
artikel
2 A new pyroelectric crystal l-lysine-doped TGS (LLTGS) Su, Genbo
2000
209 1 p. 220-222
3 p.
artikel
3 Application of the theorem of minimum entropy production to growth of lamellar eutectics with an oscillating freezing rate Popov, D.I.
2000
209 1 p. 181-197
17 p.
artikel
4 Assessment of MgO(100) and (111) substrate quality by X-ray diffraction Madsen, Lynnette D.
2000
209 1 p. 91-101
11 p.
artikel
5 Atomistic modelling of gibbsite: surface structure and morphology Fleming, Sean
2000
209 1 p. 159-166
8 p.
artikel
6 Czochralski growth and structural investigations of La1−x Nd xGaO3 solid solution single crystals Berkowski, M
2000
209 1 p. 75-80
6 p.
artikel
7 Defect structure of monocrystalline (001)-oriented Zn0.62Cu0.19In0.19S films grown on GaP by pulsed laser deposition (PLD) Wagner, G
2000
209 1 p. 68-74
7 p.
artikel
8 Dendritic ice morphology in unidirectionally solidified collagen suspensions Schoof, H
2000
209 1 p. 122-129
8 p.
artikel
9 Dislocation densities in InP single crystals grown under controlled phosphorus vapor pressure by the horizontal Bridgman method Shimizu, Atsushi
2000
209 1 p. 21-26
6 p.
artikel
10 Effects of thermodynamic nonideality in protein crystal growth Grant, M.L
2000
209 1 p. 130-137
8 p.
artikel
11 Growth and characterization of high-quality GaInAs/AlInAs triple wells Yang, Q.K
2000
209 1 p. 8-14
7 p.
artikel
12 Growth kinetics and morphological change of polymorphs of L-glutamic acid Kitamura, M
2000
209 1 p. 138-145
8 p.
artikel
13 Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers Schlenker, D
2000
209 1 p. 27-36
10 p.
artikel
14 High-temperature solution growth and characterization of the piezo-/ferroelectric (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 [PMNT] single crystals Dong, M
2000
209 1 p. 81-90
10 p.
artikel
15 Influence of contact angle, growth angle and melt surface tension on detached solidification of InSb Wang, Yazhen
2000
209 1 p. 175-180
6 p.
artikel
16 Nucleation on active sites: evolution of size distribution Kožı́šek, Z
2000
209 1 p. 198-202
5 p.
artikel
17 Numerical study of the melt–thermal effect on a silicon crystal in Czochralski growth system Kim, Jong-Seon
2000
209 1 p. 55-67
13 p.
artikel
18 Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells Zhang, M.H
2000
209 1 p. 37-42
6 p.
artikel
19 Poly-crystalline silicon with large grains deposited from Al–Si melt Yamada, Takumi
2000
209 1 p. 50-54
5 p.
artikel
20 Pulsed excimer laser annealing of Mg-doped cubic GaN Xu, Dapeng
2000
209 1 p. 203-207
5 p.
artikel
21 Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy Gong, Yanning
2000
209 1 p. 43-49
7 p.
artikel
22 Revealing growth defects in non-linear borate single crystals by chemical etching Péter, Á
2000
209 1 p. 102-109
8 p.
artikel
23 Revised form of Jackson–Hunt theory: application to directional solidification of MnBi/Bi eutectics Zheng, L.L
2000
209 1 p. 110-121
12 p.
artikel
24 Single-crystal growth of aluminum tungstate–lutetium tungstate solid solution Imanaka, N
2000
209 1 p. 217-219
3 p.
artikel
25 Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3–2.7μm laser structures Simanowski, S
2000
209 1 p. 15-20
6 p.
artikel
26 Synthesis and structure of nanocrystal-assembled bulk GaN Chen, X.L
2000
209 1 p. 208-212
5 p.
artikel
27 Thickness-dependent spherulitic growth observed in thin films of the molecular organic radical p-nitrophenyl nitronyl nitroxide Caro, J
2000
209 1 p. 146-158
13 p.
artikel
28 Time development of a solute diffusion field and morphological instability on a planar interface in the directional growth of ice crystals Nagashima, Kazushige
2000
209 1 p. 167-174
8 p.
artikel
29 Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy of InP Yan, Zheng
2000
209 1 p. 1-7
7 p.
artikel
                             29 gevonden resultaten
 
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