| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Chemical process of silicon epitaxial growth in a SiHCl3–H2 system
|
Habuka, Hitoshi
|
|
1999
|
207 |
1-2 |
p. 77-86
10 p.
|
artikel
|
| 2 |
Contactless directional crystallization
|
Slobozhanin, Lev A.
|
|
1999
|
207 |
1-2 |
p. 127-137
11 p.
|
artikel
|
| 3 |
Crystal growth of metal fluorides for CO2 laser operation III. The use of another reaction sequence
|
Pastor, R.C
|
|
1999
|
207 |
1-2 |
p. 102-103
2 p.
|
artikel
|
| 4 |
Defects of YBCO films grown by liquid-phase epitaxy on NdGaO3
|
Klemenz, C.
|
|
1999
|
207 |
1-2 |
p. 62-68
7 p.
|
artikel
|
| 5 |
Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)
|
Liu, J.P
|
|
1999
|
207 |
1-2 |
p. 150-153
4 p.
|
artikel
|
| 6 |
Explanation for the supersaturation dependence of the morphology of lysozyme crystals
|
Grimbergen, R.F.P
|
|
1999
|
207 |
1-2 |
p. 112-121
10 p.
|
artikel
|
| 7 |
(GaMg)N new semiconductor grown at high pressure of nitrogen
|
Suski, Tadeusz
|
|
1999
|
207 |
1-2 |
p. 27-29
3 p.
|
artikel
|
| 8 |
Growth and characterization of BiSCCO 2212 whiskers from melts containing various La contents
|
Jin, H
|
|
1999
|
207 |
1-2 |
p. 154-159
6 p.
|
artikel
|
| 9 |
Growth and characterization of Ga2Se3/GaAs(100) epitaxial thin films
|
Ueno, K.
|
|
1999
|
207 |
1-2 |
p. 69-76
8 p.
|
artikel
|
| 10 |
Growth morphology of primary silicon in cast Al–Si alloys and the mechanism of concentric growth
|
Wang, Ru-yao
|
|
1999
|
207 |
1-2 |
p. 43-54
12 p.
|
artikel
|
| 11 |
InP/In x Ga1−x As (0.53⩽x⩽0.81) high electron mobility transistor structures grown by solid source molecular beam epitaxy
|
Radhakrishnan, K
|
|
1999
|
207 |
1-2 |
p. 8-14
7 p.
|
artikel
|
| 12 |
Large single-grain AlCoNi quasicrystals grown by the Czochralski method
|
Gille, P
|
|
1999
|
207 |
1-2 |
p. 95-101
7 p.
|
artikel
|
| 13 |
Linearized solution of quasi-steady Stefan problem in vertical gradient freeze configuration
|
Grants, I
|
|
1999
|
207 |
1-2 |
p. 138-147
10 p.
|
artikel
|
| 14 |
Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system
|
Szczerbakow, A
|
|
1999
|
207 |
1-2 |
p. 148-149
2 p.
|
artikel
|
| 15 |
Rapid growth of DKDP crystals from high-acidity solutions
|
Bredikhin, V.I
|
|
1999
|
207 |
1-2 |
p. 122-126
5 p.
|
artikel
|
| 16 |
Stabilization of β-BaB2O4 in the system BaB2O4–Na2O–Nd2O3
|
Solé, R
|
|
1999
|
207 |
1-2 |
p. 104-111
8 p.
|
artikel
|
| 17 |
Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals
|
Foxon, C.T.
|
|
1999
|
207 |
1-2 |
p. 1-7
7 p.
|
artikel
|
| 18 |
Thermal waves of a nonaxisymmetric flow in a Czochralski-type silicon melt
|
Nakamura, Shin
|
|
1999
|
207 |
1-2 |
p. 55-61
7 p.
|
artikel
|
| 19 |
Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs
|
Bchetnia, A
|
|
1999
|
207 |
1-2 |
p. 15-19
5 p.
|
artikel
|
| 20 |
Thermodynamic analysis of the Ga–In–As–Sb–C–H system
|
Li, Jing-Bo
|
|
1999
|
207 |
1-2 |
p. 20-26
7 p.
|
artikel
|
| 21 |
Two-step MBE growth of ZnO layers on electron beam exposed (111)CaF2
|
Ko, H.J
|
|
1999
|
207 |
1-2 |
p. 87-94
8 p.
|
artikel
|
| 22 |
Vapor growth and characterization of Cr-doped ZnSe crystals
|
Su, Ching-Hua
|
|
1999
|
207 |
1-2 |
p. 35-42
8 p.
|
artikel
|
| 23 |
ZnO growth by chemical vapour transport
|
Ntep, J.-M
|
|
1999
|
207 |
1-2 |
p. 30-34
5 p.
|
artikel
|
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