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                             46 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C Li, G.
 1997
 179 3-4 p. 382-390
9 p.
 artikel
2 A double-die modification of micro-pulling-down method for in situ clad/core doping of fiber crystal Epelbaum, Boris M.
 1997
 179 3-4 p. 559-566
8 p.
 artikel
3 AFM observation for the oxygen deficiency effect on the surface morphology of VO2 thin films Nagashima, M.
 1997
 179 3-4 p. 539-545
7 p.
 artikel
4 Aging behavior of some residual impurities in CdTe single crystals Yang, B.
 1997
 179 3-4 p. 410-414
5 p.
 artikel
5 Analysis of monotectic growth: infinite diffusion in the L2 phase Coriell, S.R.
 1997
 179 3-4 p. 647-657
11 p.
 artikel
6 Announcement 1997
 179 3-4 p. 669-
1 p.
 artikel
7 Author index 1997
 179 3-4 p. 670-675
6 p.
 artikel
8 Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE Wang, H.M.
 1997
 179 3-4 p. 658-660
3 p.
 artikel
9 Crucible de-wetting during Bridgman growth in microgravity. II. Smooth crucibles Duffar, Thierry
 1997
 179 3-4 p. 397-409
13 p.
 artikel
10 Crystal growth and characterization of Ce3+ doped BaThF6 with the tysonite structure Chaminade, J.P.
 1997
 179 3-4 p. 546-550
5 p.
 artikel
11 Crystal growth and physical characterization of the semiorganic bis(thiourea) cadmium chloride Venkataramanan, V.
 1997
 179 3-4 p. 605-610
6 p.
 artikel
12 Effect of growth parameters on TiO2 thin films deposited using MOCVD Nami, Z.
 1997
 179 3-4 p. 522-538
17 p.
 artikel
13 Effect of medicinal plants on the crystallization of cholesterol Saraswathi, N.T.
 1997
 179 3-4 p. 611-617
7 p.
 artikel
14 Effect of methane concentration on the growth of crystalline C3N4 films Chen, Yan
 1997
 179 3-4 p. 515-521
7 p.
 artikel
15 Effects of heat-up procedure and grating depth on the erosion of InGaAs grating Kim, Jeong Soo
 1997
 179 3-4 p. 391-396
6 p.
 artikel
16 Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(0 0 1) Jacob, D.
 1997
 179 3-4 p. 331-338
8 p.
 artikel
17 Epitaxial growth of alkaline earth fluorides on the (0 0 1) surface of lithium fluoride. III. The system BaF 2 LiF(0 0 1) — epitaxial growth of LiBaF3 Haag, M.
 1997
 179 3-4 p. 477-487
11 p.
 artikel
18 Fabrication and I-V-T behaviour of n-GaAs semi-insulating GaInP : Fe n-GaAs structures Lourdudoss, S.
 1997
 179 3-4 p. 371-381
11 p.
 artikel
19 Formation of micropipes in SiC under kinetic aspects Heindl, J.
 1997
 179 3-4 p. 510-514
5 p.
 artikel
20 Full encapsulation by molten salts during the Bridgman growth process Duffar, T.
 1997
 179 3-4 p. 356-362
7 p.
 artikel
21 Growth and superconducting characteristics of Nd1 + x Ba2 − xCu3Oy thick films by liquid-phase epitaxy Takagi, Atsushi
 1997
 179 3-4 p. 444-450
7 p.
 artikel
22 Growth mode of Sr1 − x CuO2 − y infinite-layer thin films Kawaguchi, K.
 1997
 179 3-4 p. 459-466
8 p.
 artikel
23 Growth of nickel-base superalloy bicrystals by the seeding technique with a modified Bridgman method Chen, Gim S.
 1997
 179 3-4 p. 635-646
12 p.
 artikel
24 Growth of superconducting Pb0.5Sr2.5Y0.5Ca0.5Cu2Oy single crystals from charges containing silver Aswal, D.K.
 1997
 179 3-4 p. 665-668
4 p.
 artikel
25 Heteroepitaxial growth of Al film on Si using dimethylethylamine-alane Hayama, Kiyoteru
 1997
 179 3-4 p. 438-443
6 p.
 artikel
26 Heteroepitaxial growth of Al2O3 film on Si using dimethylethylamine-alane and O2 Hayama, Kiyoteru
 1997
 179 3-4 p. 433-437
5 p.
 artikel
27 Heteroepitaxial growth of metastable ErF3 on CaF2(1 1 1) by molecular beam epitaxy: a novel material for optical upconversion Inaba, K.
 1997
 179 3-4 p. 488-494
7 p.
 artikel
28 Heteroepitaxy of perovskite-type oxides on oxygen-annealed SrTiO3(1 0 0). Important factors for preparation of atomically flat oxide thin films Nishikawa, Hiroaki
 1997
 179 3-4 p. 467-476
10 p.
 artikel
29 Homoepitaxial growth of a-axis oriented YBa2Cu3O7 − δ thin films on single crystals Konishi, M.
 1997
 179 3-4 p. 451-458
8 p.
 artikel
30 Improving yield and performance in pseudo-ternary thermoelectric alloys (Bi2Te3)(Sb2Te3)(Sb2Se3) Ettenberg, M.H.
 1997
 179 3-4 p. 495-502
8 p.
 artikel
31 Interface field-modified solute partitioning during Mn : LiNbO3 crystal fiber growth by micro-pulling down method. I. Axial distribution analysis Uda, Satoshi
 1997
 179 3-4 p. 567-576
10 p.
 artikel
32 Kinetics and mechanism of methane hydrate formation and decomposition in liquid water. Description of hysteresis Lekvam, Knut
 1997
 179 3-4 p. 618-624
7 p.
 artikel
33 Liquid phase epitaxy of LiYF4 Rogin, P.
 1997
 179 3-4 p. 551-558
8 p.
 artikel
34 Phase diagram of the CuIn2Se system for CuInSe2 crystal growth by controlling Se contents Matsushita, Hiroaki
 1997
 179 3-4 p. 503-509
7 p.
 artikel
35 Porous GaAs formed by a two-step anodization process Hao, Maosheng
 1997
 179 3-4 p. 661-664
4 p.
 artikel
36 Preferred [1 1 1] growth of ZnSe crystals from the vapor due to repeated twinning Schönherr, E.
 1997
 179 3-4 p. 423-426
4 p.
 artikel
37 Quality-enhanced GaAs layers grown on Ge Si substrates by metalorganic chemical vapor deposition Kim, K.S.
 1997
 179 3-4 p. 427-432
6 p.
 artikel
38 Role of nitrogen precursors in MOVPE growth of ZnSe Hahn, B.
 1997
 179 3-4 p. 415-422
8 p.
 artikel
39 Selective area vapor-phase epitaxy and structural properties of Hg1 − x Cd xTe on sapphire Sochinskii, N.V.
 1997
 179 3-4 p. 585-591
7 p.
 artikel
40 Subject index 1997
 179 3-4 p. 676-678
3 p.
 artikel
41 Sublimation growth and characterization of bulk aluminum nitride single crystals Balkaş, Cengiz M.
 1997
 179 3-4 p. 363-370
8 p.
 artikel
42 The crystallization of potassium nitrate. II. Growth rate dispersion Herden, A.
 1997
 179 3-4 p. 592-604
13 p.
 artikel
43 The role of strain and composition on the morphology of InGaAsP layers grown on 〈0 0 1〉InP substrates Okada, T.
 1997
 179 3-4 p. 339-348
10 p.
 artikel
44 Transient effects in the directional solidification of AlCu alloys Su, Rong-Jiunn
 1997
 179 3-4 p. 625-634
10 p.
 artikel
45 Transmission electron microscopy study on epitaxial growth behaviors of sol-gel-derived LiNbO3 films Terabe, K.
 1997
 179 3-4 p. 577-584
8 p.
 artikel
46 X-ray and UV photoelectron spectroscopy of oxide desorption from InP under As4 and/or Sb4 overpressures: exchange reaction As ⇔ Sb on InP surfaces Godefroy, A.
 1997
 179 3-4 p. 349-355
7 p.
 artikel
                             46 gevonden resultaten
 
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