| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A highly luminescent crescent-shaped tensile-strained GaAsP AlGaAs quantum wire laser structure
|
Pan, Wugen
|
|
1997
|
170 |
1-4 |
p. 585-589
|
artikel
|
| 2 |
A high-speed high-sensitivity acoustic cell for in-line continuous monitoring of MOCVD precursor gases
|
Wajid, A.
|
|
1997
|
170 |
1-4 |
p. 237-241
|
artikel
|
| 3 |
Anomalous temperature dependence of PL characteristics in ordered InGaAsP strained layer multi-quantum well structure
|
Otsuka, Nobuyuki
|
|
1997
|
170 |
1-4 |
p. 626-633
|
artikel
|
| 4 |
Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates
|
Watkins, S.P.
|
|
1997
|
170 |
1-4 |
p. 788-793
|
artikel
|
| 5 |
Author index
|
|
|
1997
|
170 |
1-4 |
p. 822-833
|
artikel
|
| 6 |
Behaviour of vicinal InP surfaces grown by MOVPE: exploitation of AFM images
|
Thévenot, V.
|
|
1997
|
170 |
1-4 |
p. 251-256
|
artikel
|
| 7 |
Blue-green laser diode grown by photo-assisted MOCVD
|
Toda, A.
|
|
1997
|
170 |
1-4 |
p. 461-466
|
artikel
|
| 8 |
Breakdown of self-limiting behaviour in InAs GaAs heterostructures grown by atomic layer epitaxy
|
Arès, R.
|
|
1997
|
170 |
1-4 |
p. 574-578
|
artikel
|
| 9 |
Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures
|
D'Hondt, M.
|
|
1997
|
170 |
1-4 |
p. 616-620
|
artikel
|
| 10 |
Characteristics of GaSb growth using various gallium and antimony precursors
|
Wang, C.A.
|
|
1997
|
170 |
1-4 |
p. 55-60
|
artikel
|
| 11 |
Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors
|
Huang, Z.C.
|
|
1997
|
170 |
1-4 |
p. 362-366
|
artikel
|
| 12 |
Characterization of MOVPE grown InGaAsP superlattices for modulators by electron diffraction, X-ray diffraction and Z-contrast imaging
|
Lakner, H.
|
|
1997
|
170 |
1-4 |
p. 732-737
|
artikel
|
| 13 |
Characterization of p-type ZnSe grown by MOVPE; excitonic emission lifetime measurements
|
Ogata, Ken-ichi
|
|
1997
|
170 |
1-4 |
p. 507-509
|
artikel
|
| 14 |
Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption
|
Kobayashi, Naoki
|
|
1997
|
170 |
1-4 |
p. 225-229
|
artikel
|
| 15 |
Compositional control of Cd x Zn1−x Se grown by photoassisted organometallic vapor phase epitaxy
|
Bao, K.X.
|
|
1997
|
170 |
1-4 |
p. 497-502
|
artikel
|
| 16 |
Computational studies of the transient behavior of horizontal MOVPE reactors
|
Theodoropoulos, C.
|
|
1997
|
170 |
1-4 |
p. 72-76
|
artikel
|
| 17 |
Control of monolayer terrace formation in selective epitaxy
|
Ottenwälder, D.
|
|
1997
|
170 |
1-4 |
p. 695-699
|
artikel
|
| 18 |
Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE
|
Spika, Z.
|
|
1997
|
170 |
1-4 |
p. 257-262
|
artikel
|
| 19 |
4d- and 5d-transition metal acceptor doping of InP
|
Dadgar, A.
|
|
1997
|
170 |
1-4 |
p. 173-176
|
artikel
|
| 20 |
Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy
|
Goto, Hideo
|
|
1997
|
170 |
1-4 |
p. 510-513
|
artikel
|
| 21 |
Defects in MOVPE grown ZnSe on GaAs studied by deep level transient spectroscopy
|
Prösch, G.
|
|
1997
|
170 |
1-4 |
p. 537-541
|
artikel
|
| 22 |
Demonstration of the N2 carrier process for LP-MOVPE of III V's
|
Hollfelder, M.
|
|
1997
|
170 |
1-4 |
p. 103-108
|
artikel
|
| 23 |
Dependence of deposition selectivity for MOVPE of AlGaAs using HCl gas on the orientation of the substrate and the orientation of the stripe of SiN x masks
|
Fujii, Katsushi
|
|
1997
|
170 |
1-4 |
p. 679-684
|
artikel
|
| 24 |
Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy
|
Hageman, P.R.
|
|
1997
|
170 |
1-4 |
p. 270-275
|
artikel
|
| 25 |
Design and growth of InAlAs InGaAlAs strained-superlattice-barrier heterostructures for use in light-emitting devices
|
Chelakara, R.V.
|
|
1997
|
170 |
1-4 |
p. 595-599
|
artikel
|
| 26 |
Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor
|
Weyburne, David W.
|
|
1997
|
170 |
1-4 |
p. 77-82
|
artikel
|
| 27 |
Design and optimisation of Al x Ga 1−x As Al y Ga 1−y As multilayer structures for visible wavelength applications
|
Clark, A.
|
|
1997
|
170 |
1-4 |
p. 424-427
|
artikel
|
| 28 |
Diode characteristics of Li3N-diffused ZnSe grown by MOVPE
|
Honda, T.
|
|
1997
|
170 |
1-4 |
p. 503-506
|
artikel
|
| 29 |
Direct observation of the transition from a 2D layer to 3D islands at the initial stage of InGaAs growth on GaAs by AFM
|
Kitamura, M.
|
|
1997
|
170 |
1-4 |
p. 563-567
|
artikel
|
| 30 |
Doping in MOVPE of HgCdTe: orientation effects and growth of high performance IR photodiodes
|
Mitra, P.
|
|
1997
|
170 |
1-4 |
p. 542-548
|
artikel
|
| 31 |
Doping of InAs, GaSb and InPSb by low pressure MOVPE
|
von Eichel-Streiber, C.
|
|
1997
|
170 |
1-4 |
p. 783-787
|
artikel
|
| 32 |
Editorial Board
|
|
|
1997
|
170 |
1-4 |
p. IFC
|
artikel
|
| 33 |
Effect of incorporation efficiency on dopant behaviors in selective-area metalorganic vapor phase epitaxy
|
Ekawa, Mitsuru
|
|
1997
|
170 |
1-4 |
p. 685-688
|
artikel
|
| 34 |
Effects of growth temperature and V III ratio on surface structure and ordering in Ga0.5In0.5P
|
Murata, H.
|
|
1997
|
170 |
1-4 |
p. 219-224
|
artikel
|
| 35 |
Evaluation of cracking efficiency of As and P precursors
|
Ritter, D.
|
|
1997
|
170 |
1-4 |
p. 149-154
|
artikel
|
| 36 |
Evolution of the microstructure of oxide thin films
|
Becht, M.
|
|
1997
|
170 |
1-4 |
p. 799-802
|
artikel
|
| 37 |
First III–V-nitride-based violet laser diodes
|
Nakamura, Shuji
|
|
1997
|
170 |
1-4 |
p. 11-15
|
artikel
|
| 38 |
Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy
|
Kumakura, Kazuhide
|
|
1997
|
170 |
1-4 |
p. 700-704
|
artikel
|
| 39 |
Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy
|
Hara, Shinjiroh
|
|
1997
|
170 |
1-4 |
p. 579-584
|
artikel
|
| 40 |
GaAsInP heteroepitaxy and GaAsInP MESFET fabrication by MOVPE
|
Songyan, Chen
|
|
1997
|
170 |
1-4 |
p. 433-437
|
artikel
|
| 41 |
GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction
|
Liu, Jutong
|
|
1997
|
170 |
1-4 |
p. 357-361
|
artikel
|
| 42 |
Growth and characterization of InAlGaAs(P) InGaAs(P) MQW structures
|
Vanderbauwhede, W.
|
|
1997
|
170 |
1-4 |
p. 738-742
|
artikel
|
| 43 |
Growth and characterization of Sb-based heterostructures grown by LP-MOVPE
|
Tümmler, J.
|
|
1997
|
170 |
1-4 |
p. 772-776
|
artikel
|
| 44 |
Growth and doping characteristics of ZnSeTe epilayers by MOCVD
|
Kamata, Atsushi
|
|
1997
|
170 |
1-4 |
p. 518-522
|
artikel
|
| 45 |
Growth and structural properties of (GaIn)As Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy
|
Rettig, R.
|
|
1997
|
170 |
1-4 |
p. 748-751
|
artikel
|
| 46 |
Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
|
Kurpas, P.
|
|
1997
|
170 |
1-4 |
p. 203-207
|
artikel
|
| 47 |
Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition
|
Keller, S.
|
|
1997
|
170 |
1-4 |
p. 349-352
|
artikel
|
| 48 |
Growth of GaN AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
|
Ambacher, O.
|
|
1997
|
170 |
1-4 |
p. 335-339
|
artikel
|
| 49 |
Growth of heavily C-doped GaAs AlGaAs MQW structures by MOVPE for 2–3 μm normal incidence photodetectors
|
Mao, E.
|
|
1997
|
170 |
1-4 |
p. 428-432
|
artikel
|
| 50 |
Growth of highly oriented TiO2 thin films on InP(100) substrates by metalorganic chemical vapor deposition
|
Kim, Eun Kyu
|
|
1997
|
170 |
1-4 |
p. 803-807
|
artikel
|
| 51 |
Growth of high quality ZnSe on closely lattice-matched InGaAs substrates by metal organic chemical vapor deposition
|
Bevan, M.J.
|
|
1997
|
170 |
1-4 |
p. 467-471
|
artikel
|
| 52 |
Growth of InAs GaSb strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor
|
Booker, G.R.
|
|
1997
|
170 |
1-4 |
p. 777-782
|
artikel
|
| 53 |
Growth of 1.55 μm DH laserstructures using TBAs and TBP in MOMBE
|
Keidler, M.
|
|
1997
|
170 |
1-4 |
p. 161-166
|
artikel
|
| 54 |
Growth of modulation-doped GaAs AlGaAs quantum wires on V-groove patterned substrates
|
Hartmann, A.
|
|
1997
|
170 |
1-4 |
p. 605-610
|
artikel
|
| 55 |
Growth of zincblende MgS ZnSe superlattices and their heterointerface properties
|
Suemune, I.
|
|
1997
|
170 |
1-4 |
p. 480-484
|
artikel
|
| 56 |
Growth process studies by reflectance anisotropy spectroscopy on MOVPE ZnSe
|
Gnoth, D.N.
|
|
1997
|
170 |
1-4 |
p. 198-202
|
artikel
|
| 57 |
Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies
|
Bergunde, T.
|
|
1997
|
170 |
1-4 |
p. 66-71
|
artikel
|
| 58 |
Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE
|
Hatatani, Shigeo
|
|
1997
|
170 |
1-4 |
p. 297-300
|
artikel
|
| 59 |
Hexagonal facet laser with optical waveguides grown by flow-rate modulation epitaxy
|
Ando, S.
|
|
1997
|
170 |
1-4 |
p. 719-724
|
artikel
|
| 60 |
Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings
|
Franke, D.
|
|
1997
|
170 |
1-4 |
p. 113-116
|
artikel
|
| 61 |
Highly uniform AlGaAs GaAs and InGaAs(P) InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor
|
Zhang, X.
|
|
1997
|
170 |
1-4 |
p. 83-87
|
artikel
|
| 62 |
Highly uniform growth in a low-pressure MOVPE multiple wafer system
|
Arai, Takayuki
|
|
1997
|
170 |
1-4 |
p. 88-91
|
artikel
|
| 63 |
High performance deep red AlAs AlGaAs top-emitting VCSELs grown by MOVPE at high growth rates
|
Moser, M.
|
|
1997
|
170 |
1-4 |
p. 404-407
|
artikel
|
| 64 |
High power, high speed surface emitting LEDs with an InGaAs quantum well
|
Hirotani, M.
|
|
1997
|
170 |
1-4 |
p. 390-393
|
artikel
|
| 65 |
High quality GaN grown by MOVPE
|
Beaumont, B.
|
|
1997
|
170 |
1-4 |
p. 316-320
|
artikel
|
| 66 |
Hydrodynamic description of epitaxial film growth in a horizontal reactor
|
Mizuno, Yoshichika
|
|
1997
|
170 |
1-4 |
p. 61-65
|
artikel
|
| 67 |
Influence of a ZnMnTe nucleation layer on the structural quality of (111) ZnTe grown by MOVPE on (100) GaAs
|
Tromson-Carli, A.
|
|
1997
|
170 |
1-4 |
p. 549-552
|
artikel
|
| 68 |
Influence of order-domain size on the optical gain of AlGaInP laser structures
|
Geng, C.
|
|
1997
|
170 |
1-4 |
p. 418-423
|
artikel
|
| 69 |
Influence of substrate dopant type on the optical properties of GaInAs InP multiquantum well structures grown by low pressure MOVPE
|
Wood, A.K.
|
|
1997
|
170 |
1-4 |
p. 132-138
|
artikel
|
| 70 |
Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth (Ga,In)(As,P) GaAs
|
Knauer, A.
|
|
1997
|
170 |
1-4 |
p. 281-286
|
artikel
|
| 71 |
InGaAsGaAs pseudomorphic heterostructure transistors prepared by MOVPE
|
Liu, Wen-Chau
|
|
1997
|
170 |
1-4 |
p. 438-441
|
artikel
|
| 72 |
Initial growth behavior of GaAs on ZnSe in MOVPE
|
Funato, Mitsuru
|
|
1997
|
170 |
1-4 |
p. 276-280
|
artikel
|
| 73 |
In-line UV spectroscopy of YBa2Cu3O7 MOCVD precursors
|
DeSisto, William J.
|
|
1997
|
170 |
1-4 |
p. 242-245
|
artikel
|
| 74 |
InP growth on ion-implanted InP substrate: a new method to achieve selective area MOVPE
|
Behres, A.
|
|
1997
|
170 |
1-4 |
p. 655-660
|
artikel
|
| 75 |
In situ growth of nano-structures by metal-organic vapour phase epitaxy
|
Seifert, Werner
|
|
1997
|
170 |
1-4 |
p. 39-46
|
artikel
|
| 76 |
In situ measurement of the thermal and photo-assisted MOVPE of ZnTe using laser reflectometry
|
Stafford, A.
|
|
1997
|
170 |
1-4 |
p. 182-187
|
artikel
|
| 77 |
In situ monitoring of CdTe nucleation on GaAs (100) using spectroscopic ellipsometry
|
Murthy, S.Dakshina
|
|
1997
|
170 |
1-4 |
p. 193-197
|
artikel
|
| 78 |
In situ reflectance difference spectroscopy of ZnSe-based semiconductor surfaces
|
Kastner, Marcus J.
|
|
1997
|
170 |
1-4 |
p. 188-192
|
artikel
|
| 79 |
In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers
|
Knorr, K.
|
|
1997
|
170 |
1-4 |
p. 230-236
|
artikel
|
| 80 |
Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
|
Roehle, H.
|
|
1997
|
170 |
1-4 |
p. 109-112
|
artikel
|
| 81 |
Large bandgap energy control of InAlAs InGaAs multiple quantum wells selectively grown by low-pressure MOVPE
|
Tsuji, Masayoshi
|
|
1997
|
170 |
1-4 |
p. 669-673
|
artikel
|
| 82 |
Large scale manufacturing of compound semiconductors by MOVPE
|
Thompson, A.G.
|
|
1997
|
170 |
1-4 |
p. 92-96
|
artikel
|
| 83 |
Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD
|
Kim, Seong-Il
|
|
1997
|
170 |
1-4 |
p. 665-668
|
artikel
|
| 84 |
Low pressure metal-organic chemical vapor deposition of InP/InAlAs/InGaAs quantum wires
|
Kappelt, M.
|
|
1997
|
170 |
1-4 |
p. 590-594
|
artikel
|
| 85 |
Low pressure MOVPE of GaN and GaInN GaN heterostructures
|
Scholz, F.
|
|
1997
|
170 |
1-4 |
p. 321-324
|
artikel
|
| 86 |
Low-pressure OMCVD growth of AlGaAs vertical quantum wells on non-planar substrates
|
Biasiol, G.
|
|
1997
|
170 |
1-4 |
p. 600-604
|
artikel
|
| 87 |
Low-threshold strained multi-quantum well lasers fabricated by selective metalorganic vapor phase epitaxy without a semiconductor etching process
|
Sakata, Y.
|
|
1997
|
170 |
1-4 |
p. 456-460
|
artikel
|
| 88 |
Luminescence characteristics of InAlPInGaP heterostructures having native-oxide windows
|
Islam, M.R.
|
|
1997
|
170 |
1-4 |
p. 413-417
|
artikel
|
| 89 |
Magnesium-doped InGaAs using (C2H5C5H4)2Mg: application to InP-based HBTs
|
Ohkubo, M.
|
|
1997
|
170 |
1-4 |
p. 177-181
|
artikel
|
| 90 |
Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devices
|
Heuken, M.
|
|
1997
|
170 |
1-4 |
p. 30-38
|
artikel
|
| 91 |
Metalorganic vapor phase epitaxy of Zn1−x Fe xSe films
|
Peck, J.
|
|
1997
|
170 |
1-4 |
p. 523-527
|
artikel
|
| 92 |
Microampere laser threshold at 80°C with InGaAs/GaAs/InGaP buried heterostructre strained quantum well lasers
|
Nakamura, Koji
|
|
1997
|
170 |
1-4 |
p. 377-382
|
artikel
|
| 93 |
Migration-controlled narrow-stripe selective MOVPE for high-quality InGaAsP InGaAsP MQWs
|
Kudo, Koji
|
|
1997
|
170 |
1-4 |
p. 634-638
|
artikel
|
| 94 |
MOCVD growth of high-quality AlGaAs on Si substrates for high-efficiency solar cells
|
Soga, T.
|
|
1997
|
170 |
1-4 |
p. 447-450
|
artikel
|
| 95 |
MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications
|
Venkatasubramanian, R.
|
|
1997
|
170 |
1-4 |
p. 817-821
|
artikel
|
| 96 |
MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes
|
Bertone, D.
|
|
1997
|
170 |
1-4 |
p. 715-718
|
artikel
|
| 97 |
MOVPE-grown (AlGa)As double-barrier multiquantum well (DBMQW) laser diode with low vertical beam divergence
|
Maląg, Andrzej
|
|
1997
|
170 |
1-4 |
p. 408-412
|
artikel
|
| 98 |
MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers
|
Mawst, L.J.
|
|
1997
|
170 |
1-4 |
p. 383-389
|
artikel
|
| 99 |
MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources
|
Kirpal, G.
|
|
1997
|
170 |
1-4 |
p. 167-172
|
artikel
|
| 100 |
MOVPE growth for an integrated InGaAs InP PIN-HBT receiver using Zn-doped p+-InGaAs layers
|
Eisenbach, A.
|
|
1997
|
170 |
1-4 |
p. 451-455
|
artikel
|
| 101 |
MOVPE growth of GaInP GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source
|
Kurpas, P.
|
|
1997
|
170 |
1-4 |
p. 442-446
|
artikel
|
| 102 |
MOVPE growth of InP GaInAs and GaAs GaInP heterostructures for electronic transport applications
|
Carlsson, N.
|
|
1997
|
170 |
1-4 |
p. 127-131
|
artikel
|
| 103 |
MOVPE growth of magnesium cadmium sulphide: rocksalt or sphalerite?
|
Poole, I.B.
|
|
1997
|
170 |
1-4 |
p. 528-532
|
artikel
|
| 104 |
MOVPE growth of strain-compensated 1300 nm In1−x Ga xAsyP1−y quantum well structures
|
Silfvenius, Christofer
|
|
1997
|
170 |
1-4 |
p. 122-126
|
artikel
|
| 105 |
MOVPE growth of ternary and quaternary tensile strained MQW structures for polarization insensitive devices
|
Wiedemann, P.
|
|
1997
|
170 |
1-4 |
p. 117-121
|
artikel
|
| 106 |
MOVPE: is there any other technology for optoelectronics?
|
Moon, R.L.
|
|
1997
|
170 |
1-4 |
p. 1-10
|
artikel
|
| 107 |
MOVPE of GaN using a specially designed two-flow horizontal reactor
|
Nishida, K.
|
|
1997
|
170 |
1-4 |
p. 312-315
|
artikel
|
| 108 |
New dopant precursors for n-type and p-type GaN
|
Ohuchi, Y.
|
|
1997
|
170 |
1-4 |
p. 325-328
|
artikel
|
| 109 |
Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy
|
Taudt, W.
|
|
1997
|
170 |
1-4 |
p. 491-496
|
artikel
|
| 110 |
Novel quantum confined structures via atmospheric pressure MOCVD growth in asbestos and opals
|
Yates, H.M.
|
|
1997
|
170 |
1-4 |
p. 611-615
|
artikel
|
| 111 |
Novel single source precursors for MOCVD of AlN, GaN and InN
|
Fischer, Roland A.
|
|
1997
|
170 |
1-4 |
p. 139-143
|
artikel
|
| 112 |
Observation of the 2D–3D growth mode transition in the InAs GaAs system
|
Geiger, M.
|
|
1997
|
170 |
1-4 |
p. 558-562
|
artikel
|
| 113 |
On the use of remote RF plasma source to enhance III–V MOCVD technology
|
Bruno, G.
|
|
1997
|
170 |
1-4 |
p. 301-305
|
artikel
|
| 114 |
Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursor
|
Gurskii, A.L.
|
|
1997
|
170 |
1-4 |
p. 533-536
|
artikel
|
| 115 |
Optical properties of MOVPE grown Al x Ga1−x As quantum wells
|
Roberts, J.S.
|
|
1997
|
170 |
1-4 |
p. 621-625
|
artikel
|
| 116 |
Organometallic vapor phase epitaxial growth of AlSb-based alloys
|
Wang, C.A.
|
|
1997
|
170 |
1-4 |
p. 725-731
|
artikel
|
| 117 |
Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe
|
Duan, Shu-kun
|
|
1997
|
170 |
1-4 |
p. 514-517
|
artikel
|
| 118 |
Photoassisted growth and nitrogen doping of ZnSe
|
Hahn, Berthold
|
|
1997
|
170 |
1-4 |
p. 472-475
|
artikel
|
| 119 |
Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide
|
Hjelt, Kari
|
|
1997
|
170 |
1-4 |
p. 794-798
|
artikel
|
| 120 |
Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE
|
Saito, Hisao
|
|
1997
|
170 |
1-4 |
p. 372-376
|
artikel
|
| 121 |
Photoluminescence excitation spectroscopy of GaP1−x N x alloys: conduction-band-edge formation by nitrogen incorporation
|
Yaguchi, Hiroyuki
|
|
1997
|
170 |
1-4 |
p. 353-356
|
artikel
|
| 122 |
Polarisation characteristics of visible VCSELs
|
Chen, Y.H.
|
|
1997
|
170 |
1-4 |
p. 394-398
|
artikel
|
| 123 |
Precursor chemistry: remaining challenges and some novel approaches
|
O'Brien, P.
|
|
1997
|
170 |
1-4 |
p. 23-29
|
artikel
|
| 124 |
Preface
|
Mullin, J.B.
|
|
1997
|
170 |
1-4 |
p. xi-xii
|
artikel
|
| 125 |
Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
|
Protzmann, H.
|
|
1997
|
170 |
1-4 |
p. 155-160
|
artikel
|
| 126 |
Recent progress in multi-wafer CBE systems
|
Ando, Hideyasu
|
|
1997
|
170 |
1-4 |
p. 16-22
|
artikel
|
| 127 |
Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
|
Tanaka, Satoru
|
|
1997
|
170 |
1-4 |
p. 329-334
|
artikel
|
| 128 |
Reduction of unintentional impurities at the interface between epitaxial layers and GaAs substrates
|
Nittono, Takumi
|
|
1997
|
170 |
1-4 |
p. 762-766
|
artikel
|
| 129 |
Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy
|
Patrikarakos, D.G.
|
|
1997
|
170 |
1-4 |
p. 215-218
|
artikel
|
| 130 |
Regrowth of high-quality AlGaAs and AlGaInP layers and quantum well structures on Se-doped AlGaAs by MOVPE
|
Lee, Kun-Jing
|
|
1997
|
170 |
1-4 |
p. 757-761
|
artikel
|
| 131 |
Replacement of hydrides by TBAs and TBP for the growth of various III–V materials in production scale MOVPE reactors
|
Beccard, R.
|
|
1997
|
170 |
1-4 |
p. 97-102
|
artikel
|
| 132 |
Selective area epitaxy of GaN for electron field emission devices
|
Kapolnek, D.
|
|
1997
|
170 |
1-4 |
p. 340-343
|
artikel
|
| 133 |
Selective area etching of AlGaAs GaAs heterostructures using AsCl3
|
Ortion, J.M.
|
|
1997
|
170 |
1-4 |
p. 674-678
|
artikel
|
| 134 |
Selective-area MOCVD growth for 1.3 μm laser diodes with a monolithically integrated waveguide lens
|
Takiguchi, T.
|
|
1997
|
170 |
1-4 |
p. 705-709
|
artikel
|
| 135 |
Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions
|
Zimmermann, G.
|
|
1997
|
170 |
1-4 |
p. 645-649
|
artikel
|
| 136 |
Self organization phenomena of InGaAs GaAs quantum dots grown by metalorganic chemical vapour deposition
|
Heinrichsdorff, F.
|
|
1997
|
170 |
1-4 |
p. 568-573
|
artikel
|
| 137 |
Silicon shadow mask MOVPE for in-plane thickness control of InGaAsP InP structures
|
Suzuki, M.
|
|
1997
|
170 |
1-4 |
p. 661-664
|
artikel
|
| 138 |
Step ordering during OMCVD growth on non-planar substrates
|
Reinhardt, F.
|
|
1997
|
170 |
1-4 |
p. 689-694
|
artikel
|
| 139 |
Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry
|
Steimetz, E.
|
|
1997
|
170 |
1-4 |
p. 208-214
|
artikel
|
| 140 |
Structural and photoelectrical properties of FeS2 (pyrite) thin films grown by MOCVD
|
Thomas, B.
|
|
1997
|
170 |
1-4 |
p. 808-812
|
artikel
|
| 141 |
Structural investigation of MOVPE grown InGaAs buffer layers
|
Maigné, P.
|
|
1997
|
170 |
1-4 |
p. 743-747
|
artikel
|
| 142 |
Structural study of (100) CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100) GaAs
|
Mazzer, M.
|
|
1997
|
170 |
1-4 |
p. 553-557
|
artikel
|
| 143 |
Studies of prereactions during MOVPE growth of wide band-gap II VI semiconductors: the effect of pyridine upon the gas-phase reactions between H2S and Me2Zn
|
Pickett, Nigel L.
|
|
1997
|
170 |
1-4 |
p. 476-479
|
artikel
|
| 144 |
Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
|
Van der Stricht, W.
|
|
1997
|
170 |
1-4 |
p. 344-348
|
artikel
|
| 145 |
Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers
|
Silvestre, L.
|
|
1997
|
170 |
1-4 |
p. 639-644
|
artikel
|
| 146 |
Subject index
|
|
|
1997
|
170 |
1-4 |
p. 834-836
|
artikel
|
| 147 |
Surface diffusion kinetics of GaAs and AlAs metalorganic vapor-phase epitaxy
|
Kasu, Makoto
|
|
1997
|
170 |
1-4 |
p. 246-250
|
artikel
|
| 148 |
Surface morphology of carbon-doped GaAs grown by MOVPE
|
Li, Jiang
|
|
1997
|
170 |
1-4 |
p. 292-296
|
artikel
|
| 149 |
Surface morphology of InP InGaAs in selective area growth by chemical beam epitaxy
|
Verschuren, C.A.
|
|
1997
|
170 |
1-4 |
p. 650-654
|
artikel
|
| 150 |
Synthesis and properties of zinc-nitrogen compounds for the MOVPE of p-type ZnSe
|
Pohl, U.W.
|
|
1997
|
170 |
1-4 |
p. 144-148
|
artikel
|
| 151 |
Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates
|
Bastos, P.L.
|
|
1997
|
170 |
1-4 |
p. 710-714
|
artikel
|
| 152 |
Temperature induced resonant Raman scattering of MOVPE grown ZnS x Se 1−x GaAs(100) heterostructures
|
Schneider, A.
|
|
1997
|
170 |
1-4 |
p. 767-771
|
artikel
|
| 153 |
The growth of Zn3As2 on InP by atmospheric pressure MOVPE
|
Scriven, G.J.
|
|
1997
|
170 |
1-4 |
p. 813-816
|
artikel
|
| 154 |
The influence of strain and mosaic structure on electrical and optical properties of GaN films on sapphire substrates
|
Wickenden, A.E.
|
|
1997
|
170 |
1-4 |
p. 367-371
|
artikel
|
| 155 |
The microstructure and thermal stability of CBE grown heavily carbon doped GaAs
|
Westwater, S.P.
|
|
1997
|
170 |
1-4 |
p. 752-756
|
artikel
|
| 156 |
Thermal decomposition of di-tertiarybutyl selenide and dimethylzinc in a metalorganic vapour phase epitaxy reactor
|
Fan, G.H.
|
|
1997
|
170 |
1-4 |
p. 485-490
|
artikel
|
| 157 |
Thermodynamic analysis of the MOVPE growth of In x Ga1−x N
|
Koukitu, Akinori
|
|
1997
|
170 |
1-4 |
p. 306-311
|
artikel
|
| 158 |
The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT
|
Lindner, A.
|
|
1997
|
170 |
1-4 |
p. 287-291
|
artikel
|
| 159 |
Use of V III ratio to produce heterostructures in ordered GaInP
|
Chun, Y.S.
|
|
1997
|
170 |
1-4 |
p. 263-269
|
artikel
|
| 160 |
Visible (683 to 713 nm) room-temperature AlGaAs vertical cavity surface emitting lasers (VCSELs)
|
Sale, T.E.
|
|
1997
|
170 |
1-4 |
p. 399-403
|
artikel
|
| 161 |
X-ray diffraction solutions to heteroepitaxial growth problems
|
Halliwell, M.A.G.
|
|
1997
|
170 |
1-4 |
p. 47-54
|
artikel
|
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