| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new reactor system for MOCVD of ZaSe: Modelling and experimental results for growth from dimethylzinc and diethylselenide
|
Giapis, Konstantinos P.
|
|
1990
|
104 |
3 |
p. 629-640
12 p.
|
artikel
|
| 2 |
A theoretical study of adsorption equilibria in silicon CVD
|
Gardeniers, J.G.E.
|
|
1990
|
104 |
3 |
p. 727-743
17 p.
|
artikel
|
| 3 |
Chemical vapour transport and structural characterization of layered MnIn2Se4 single crystals
|
Döll, G.
|
|
1990
|
104 |
3 |
p. 593-600
8 p.
|
artikel
|
| 4 |
Crystal growth of SiC by step-controlled epitaxy
|
Ueda, Tetsuzo
|
|
1990
|
104 |
3 |
p. 695-700
6 p.
|
artikel
|
| 5 |
Crystallization of calcium and magnesium phosphates from solutions of low concentration
|
Abbona, F.
|
|
1990
|
104 |
3 |
p. 661-671
11 p.
|
artikel
|
| 6 |
Effect of Cd-annealing on the IR transmittance of CdTe wafers grown by the Bridgman method
|
Kim, W.J.
|
|
1990
|
104 |
3 |
p. 677-682
6 p.
|
artikel
|
| 7 |
Effect of diffusion in quenched solidifying samples on measurement of composition distribution
|
Wanqi, Jie
|
|
1990
|
104 |
3 |
p. 748-751
4 p.
|
artikel
|
| 8 |
Effect of Ge on the heterogeneous nucleation of Pb solidification by Al
|
Zhang, D.L.
|
|
1990
|
104 |
3 |
p. 583-592
10 p.
|
artikel
|
| 9 |
Evaluation of high quality berlinite crystals grown in sulphuric acid medium
|
Philippot, E.
|
|
1990
|
104 |
3 |
p. 713-726
14 p.
|
artikel
|
| 10 |
Growth and characterization of doped and undoped AlSb single crystals
|
Lin, C.T.
|
|
1990
|
104 |
3 |
p. 653-660
8 p.
|
artikel
|
| 11 |
Growth and characterization of GaAs: In by a new horizontal zone melt technique
|
Park, Young Ju
|
|
1990
|
104 |
3 |
p. 610-616
7 p.
|
artikel
|
| 12 |
High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary
|
Tournié, E.
|
|
1990
|
104 |
3 |
p. 683-694
12 p.
|
artikel
|
| 13 |
Impurities in commercial-scale magnetic czochralski silicon: Axial versus transverse magnetic fields
|
Ravishankar, P.S.
|
|
1990
|
104 |
3 |
p. 617-628
12 p.
|
artikel
|
| 14 |
Liquid phase epitaxy of silicon at low temperatures
|
Kresse, F.
|
|
1990
|
104 |
3 |
p. 744-747
4 p.
|
artikel
|
| 15 |
MOCVD Layer growth of ZnSe and ZnS / ZnSe multiple layers using nitrogen containing adducts of dimethylzinc
|
Wright, P.J.
|
|
1990
|
104 |
3 |
p. 601-609
9 p.
|
artikel
|
| 16 |
One-dimensional modelling of coupled heat and mass transfer at solid/liquid moving interface
|
Rouzaud, A.
|
|
1990
|
104 |
3 |
p. 701-712
12 p.
|
artikel
|
| 17 |
Rapid single crystalline diamond growth by acetylene-oxygen flame deposition
|
Janssen, G.
|
|
1990
|
104 |
3 |
p. 752-757
6 p.
|
artikel
|
| 18 |
The flux growth of scandium oxide crystals
|
Changkang, Chen
|
|
1990
|
104 |
3 |
p. 672-676
5 p.
|
artikel
|
| 19 |
Weak flows in a floating zone configuration as a source of radial segregation
|
Levenstam, Mårten
|
|
1990
|
104 |
3 |
p. 641-652
12 p.
|
artikel
|
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