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                             159 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absorption spectra of group V donors in germanium Fan, H.Y.
1959
8 C p. 270-
1 p.
artikel
2 A many-body treatment of dielectric screening for impurity states and excitons in semiconductors Roth, Laura M.
1959
8 C p. 47-49
3 p.
artikel
3 Analysis of intrinsic recombination radiation from silicon and germanium Haynes, J.R.
1959
8 C p. 392-396
5 p.
artikel
4 An analysis of mixed ambipolar and exciton diffusion in CdS crystals Diemer, G.
1959
8 C p. 182-187
6 p.
artikel
5 Anisotropy of hot electrons in germanium Sasaki, W.
1959
8 C p. 250-256
7 p.
artikel
6 A review of recent work on diamond Mitchell, E.W.J.
1959
8 C p. 444-449
6 p.
artikel
7 Auger effect in semiconductors Landsberg, P.T.
1959
8 C p. 73-75
3 p.
artikel
8 Band structure and transport properties of single-crystal graphite Soule, D.E.
1959
8 C p. 29-35
7 p.
artikel
9 Band structure calculations of semi-conductors by the Kohn-Rostoker-Korringa method: Application to germanium Segall, B.
1959
8 C p. 371-374
4 p.
artikel
10 Band theory Slater, J.C.
1959
8 C p. 21-25
5 p.
artikel
11 Binding and semiconductor properties of A III B V compounds Folberth, O.G.
1959
8 C p. 14-20
7 p.
artikel
12 Calculation of electronic energy bands in Zns Birman, Joseph L.
1959
8 C p. 35-37
3 p.
artikel
13 Capture diameter of dislocations in low-angle grain boundaries in germanium Mueller, Rolf K.
1959
8 C p. 157-161
5 p.
artikel
14 Carrier recombination in germanium as a function of temperature between 100°K and 550°K Goldstein, S.
1959
8 C p. 78-80
3 p.
artikel
15 Centres de recombinaison introduits dans le germanium par des electrons de 2 MeV Baruch, P.
1959
8 C p. 153-157
5 p.
artikel
16 Chemical shift of donor states in germanium Weinreich, Gabriel
1959
8 C p. 216-218
3 p.
artikel
17 Cohesive energies and band structures of covalence and ionic crystals Morita, A.
1959
8 C p. 363-366
4 p.
artikel
18 Concerning the problem of exciton diffusion in photoconductors Broser, I.
1959
8 C p. 177-179
3 p.
artikel
19 Conducting states in organic molecular crystals Fox, David
1959
8 C p. 439-441
3 p.
artikel
20 Cross modulation of d.c. resistance by microwave cyclotron resonance Zeiger, H.J.
1959
8 C p. 496-498
3 p.
artikel
21 Cyclotron resonance in cadmium sulfide Dexter, R.N.
1959
8 C p. 494-495
2 p.
artikel
22 D-band and mixed-valency semiconductors Zener, C.
1959
8 C p. 26-28
3 p.
artikel
23 Deep level impurities in germanium Tyler, W.W.
1959
8 C p. 59-65
7 p.
artikel
24 Dielectric constant of germanium and silicon as a function of volume Cardona, Manuel
1959
8 C p. 204-206
3 p.
artikel
25 Discussion Frederikse, H.P.R.
1959
8 C p. 361-362
2 p.
artikel
26 Discussion Statz, H.
1959
8 C p. 121-122
2 p.
artikel
27 Discussion Pearson, G.L.
1959
8 C p. 164-165
2 p.
artikel
28 Discussion Kip, A.F.
1959
8 C p. 506-
1 p.
artikel
29 Discussion Burstein, E.
1959
8 C p. 285-
1 p.
artikel
30 Discussion Kip, A.F.
1959
8 C p. 530-
1 p.
artikel
31 Discussion Herman, F.
1959
8 C p. 379-381
3 p.
artikel
32 Discussion Fan, H.Y.
1959
8 C p. 336-337
2 p.
artikel
33 Discussion Lax, B.
1959
8 C p. 193-195
3 p.
artikel
34 Discussion Keyes, R.W.
1959
8 C p. 262-263
2 p.
artikel
35 Discussion Lax, M.
1959
8 C p. 421-422
2 p.
artikel
36 Discussion Keck, P.H.
1959
8 C p. 442-443
2 p.
artikel
37 Discussion Dutton, D.
1959
8 C p. 302-
1 p.
artikel
38 Discussion Herman, F.
1959
8 C p. 20-
1 p.
artikel
39 Discussion Crawford, J.H.
1959
8 C p. 218-
1 p.
artikel
40 Discussion Dunlap, Jr., W.C.
1959
8 C p. 484-485
2 p.
artikel
41 Discussion Shockley, W.
1959
8 C p. 13-14
2 p.
artikel
42 Discussion Ehrenreich, H.
1959
8 C p. 50-51
2 p.
artikel
43 Discussion Rose, A.
1959
8 C p. 85-96
12 p.
artikel
44 Donor wavefunctions in silicon by the ENDOR technique Feher, G.
1959
8 C p. 486-
1 p.
artikel
45 Editorial Board 1959
8 C p. CO2-
1 p.
artikel
46 Effect of annealing on the state of certain impurities in Ge Lashkarev, V.E.
1959
8 C p. 84-85
2 p.
artikel
47 Effect of electron and impurity density on the field-dependence of mobility in germanium Gunn, J.B.
1959
8 C p. 239-241
3 p.
artikel
48 Effect of the metal-to-semiconductor potential on the semiconductor surface barrier height Harrick, N.J.
1959
8 C p. 106-108
3 p.
artikel
49 Effects associated with a linear energy term in the valence band of intermetallic semiconductors Stern, Frank
1959
8 C p. 277-280
4 p.
artikel
50 Effet electromagnetophotonique dans le germanium Bernard, Maurice
1959
8 C p. 332-336
5 p.
artikel
51 Electrical properties of clean germanium surfaces Barnes, G.A.
1959
8 C p. 111-113
3 p.
artikel
52 Electronic processes at grain boundaries Sosnowski, L.
1959
8 C p. 142-146
5 p.
artikel
53 Electronic processes in the silver halides at low temperature Brown, F.C.
1959
8 C p. 300-302
3 p.
artikel
54 Electronic properties of gray tin single crystals Ewald, A.W.
1959
8 C p. 523-525
3 p.
artikel
55 Electronic properties of ZnO Hutson, A.R.
1959
8 C p. 467-472
6 p.
artikel
56 Electronic structure of an exciton in alkali halides Muto, T.
1959
8 C p. 286-289
4 p.
artikel
57 Electron impact ionization in semiconductors Tauc, Jan
1959
8 C p. 219-223
5 p.
artikel
58 Energy bands of silicon and germanium Phillips, J.C.
1959
8 C p. 369-371
3 p.
artikel
59 Energy band structure of sodium atoms in the diamond lattice Bassani, Franco
1959
8 C p. 375-377
3 p.
artikel
60 Energy transfer in semiconductors Balkanski, M.
1959
8 C p. 179-181
3 p.
artikel
61 Exciton and phonon effects in the absorption spectra of germanium and silicon Macfarlane, G.G.
1959
8 C p. 388-392
5 p.
artikel
62 Exciton-lattice interaction and a theory of the line shape of exciton absorption bands Toyozawa, Y.
1959
8 C p. 289-290
2 p.
artikel
63 Experimental studies on the thermal conductivity in semiconductors Kanai, Y.
1959
8 C p. 338-339
2 p.
artikel
64 Far infrared magneto-optic effects from impurities in germanium Boyle, W.S.
1959
8 C p. 321-323
3 p.
artikel
65 Fine structure in the Hall coefficient Beer, A.C.
1959
8 C p. 507-511
5 p.
artikel
66 Fluorescent emission ascribable to exciton annihilation in pure Cds crystals Grillot, Edmond
1959
8 C p. 187-190
4 p.
artikel
67 Fundamental transition processes Polder, D.
1959
8 C p. 536-538
3 p.
artikel
68 Galvanomagnetic effects in bismuth telluride Drabble, J.R.
1959
8 C p. 428-430
3 p.
artikel
69 Galvanomagnetic effects in n-InSb at low temperatures in strong magnetic fields Haslett, J.C.
1959
8 C p. 518-523
6 p.
artikel
70 Galvanomagnetic effects in the quantum limit Argyres, Petros N.
1959
8 C p. 124-130
7 p.
artikel
71 Germanium and silicon surfaces Wolsky, Sumner P.
1959
8 C p. 114-116
3 p.
artikel
72 Giant traps Lax, Melvin
1959
8 C p. 66-73
8 p.
artikel
73 Hall mobility of a cleaned germanium surface Missman, Rolland
1959
8 C p. 109-111
3 p.
artikel
74 High electric field effects in n-indium antimonide Steele, M.C.
1959
8 C p. 242-244
3 p.
artikel
75 Hot and warm electrons — A review Koenig, S.H.
1959
8 C p. 227-234
8 p.
artikel
76 Impurity band conduction in strong magnetic fields Sladek, R.J.
1959
8 C p. 515-518
4 p.
artikel
77 Index of authors 1959
8 C p. 551-552
2 p.
artikel
78 Infrared absorption in neutron irradiated silicon Fan, H.Y.
1959
8 C p. 272-274
3 p.
artikel
79 Infrared absorption of free carriers produced in semiconductors by photoeffect Kessler, F.R.
1959
8 C p. 275-277
3 p.
artikel
80 Infrared lattice vibration studies of polar character in compound semiconductors Picus, G.
1959
8 C p. 282-285
4 p.
artikel
81 Infrared phosphor-semiconductors Garlick, G.F.J.
1959
8 C p. 449-457
9 p.
artikel
82 Interaction of excitons with lattice vibrations Goodman, B.
1959
8 C p. 291-294
4 p.
artikel
83 Intermetallic semiconductors containing alkali metals Spicer, W.E.
1959
8 C p. 437-439
3 p.
artikel
84 Intervalence band transitions in gallium arsenide Braunstein, R.
1959
8 C p. 280-282
3 p.
artikel
85 Introduction Hebb, M.H.
1959
8 C p. 1-
1 p.
artikel
86 Lattice mobility of hot carriers Conwell, E.
1959
8 C p. 234-239
6 p.
artikel
87 Lattice vibrational spectrum of germanium Herman, Frank
1959
8 C p. 405-418
14 p.
artikel
88 Lattice vibrations of semiconductors by neutron spectrometry Brockhouse, B.N.
1959
8 C p. 400-405
6 p.
artikel
89 Low temperature impurity conduction in silicon Longo, T.A.
1959
8 C p. 259-261
3 p.
artikel
90 Magneto-surface properties of near intrinsic germanium Zemel, J.N.
1959
8 C p. 102-105
4 p.
artikel
91 Measurement of the galvanomagnetic effects in pure tellurium Roth, H.
1959
8 C p. 525-530
6 p.
artikel
92 Microwave Faraday rotation: Measurement of the conductivity tensor Portis, A.M.
1959
8 C p. 326-329
4 p.
artikel
93 Microwave Hall effect in germanium and silicon at 20 kmc/s Hambleton, G.E.
1959
8 C p. 329-332
4 p.
artikel
94 Motion of electrons and holes in semiconductors from a many-electron point of view Kohn, W.
1959
8 C p. 45-47
3 p.
artikel
95 Nuclear magnetic resonance in semiconductors Kraus, Olen
1959
8 C p. 504-506
3 p.
artikel
96 Nuclear magnetic resonance studies of doped III–V compounds Rhoderick, E.H.
1959
8 C p. 498-504
7 p.
artikel
97 On photo-ionization by fast electrons in germanium and silicon Vavilov, Victor S.
1959
8 C p. 223-226
4 p.
artikel
98 On the connection between bonds and bands in metals and semiconductors Choquard, Ph.
1959
8 C p. 366-369
4 p.
artikel
99 On the role of the short and long-range order in the electrical properties of substances Regel, A.R.
1959
8 C p. 124-
1 p.
artikel
100 On the theory of excitons in solids Haken, Hermann
1959
8 C p. 166-171
6 p.
artikel
101 On the theory of strong-field conduction Price, P.J.
1959
8 C p. 136-137
2 p.
artikel
102 Optical and magnetic surface studies on germanium Bray, Ralph
1959
8 C p. 99-102
4 p.
artikel
103 Optical investigation of semiconductors at the University of Rochester Dexter, D.L.
1959
8 C p. 473-481
9 p.
artikel
104 Optical spectrum and magneto-optical properties of excitons Gross, E.F.
1959
8 C p. 172-174
3 p.
artikel
105 Phonon-drag thermomagnetic effects in n-germanium Geballe, T.H.
1959
8 C p. 347-353
7 p.
artikel
106 Photoconductivity in crystals of silver bromide Braun, E.A.
1959
8 C p. 297-300
4 p.
artikel
107 Properties of various semiconductors Joffé, A.
1959
8 C p. 6-13
8 p.
artikel
108 Quantum magneto-absorption phenomena in semiconductors Lax, B.
1959
8 C p. 311-318
8 p.
artikel
109 Radiative recombination and lifetime in germanium Brill, Patricia H.
1959
8 C p. 75-77
3 p.
artikel
110 Recent advances in the optical and electronic properties of PbS, PbSe, PbTe and their alloys Scanlon, W.W.
1959
8 C p. 423-428
6 p.
artikel
111 Recombinaison radiative par l'intermédiaire des dislocations dans le germanium Guillaume, C.Benoit ÀLa
1959
8 C p. 150-153
4 p.
artikel
112 Recombination, trapping, and optical phenomena Apker, L.
1959
8 C p. 538-541
4 p.
artikel
113 Screening effects in polar semiconductors Ehrenreich, H.
1959
8 C p. 130-135
6 p.
artikel
114 Semiconductors of the type AIIIBVI Fielding, P.
1959
8 C p. 434-437
4 p.
artikel
115 Some characteristics of large band gap compound semiconductors Prener, J.S.
1959
8 C p. 461-464
4 p.
artikel
116 Space-charge-limited currents as a technique for the study of imperfections in pure crystals Lampert, M.A.
1959
8 C p. 464-466
3 p.
artikel
117 Spectroscopie du corps solide et spectres d'excitons Nikitine, S.
1959
8 C p. 190-
1 p.
artikel
118 Spin resonance of deep level impurities in germanium and silicon Ludwig, G.W.
1959
8 C p. 490-
1 p.
artikel
119 Spin resonance of donors in CdS Lambe, John
1959
8 C p. 492-494
3 p.
artikel
120 State density in the valence band of silicon Hagstrum, Homer D.
1959
8 C p. 211-216
6 p.
artikel
121 Stationary states of semiconductors Brooks, Harvey
1959
8 C p. 531-536
6 p.
artikel
122 Studies on the recombination of electrons and holes in germanium Kalashnikov, S.G.
1959
8 C p. 52-59
8 p.
artikel
123 Sulfur in silicon Carlson, R.O.
1959
8 C p. 81-83
3 p.
artikel
124 Surfaces Brattain, Walter H.
1959
8 C p. 541-543
3 p.
artikel
125 Surface-structure and work-function determinations for Silicon crystals Farnsworth, H.E.
1959
8 C p. 116-118
3 p.
artikel
126 Sur les effets de transport dans l'antimoniure d'indium Rodot, M.
1959
8 C p. 358-361
4 p.
artikel
127 Temperature dependence of the optical band gap in ZnS Piper, W.W.
1959
8 C p. 457-461
5 p.
artikel
128 The absorption edge spectrum of diamond Clark, C.D.
1959
8 C p. 481-484
4 p.
artikel
129 The direct and indirect transition excitons in germanium Zwerdling, S.
1959
8 C p. 397-400
4 p.
artikel
130 The effect of pressure on the properties of germanium and silicon Paul, William
1959
8 C p. 196-204
9 p.
artikel
131 The effect of some surface treatments on the characteristics of fast states on germanium surfaces Harnik, E.
1959
8 C p. 96-99
4 p.
artikel
132 The effect of uniaxial tensile stress on impurity conduction in germanium Fritzsche, H.
1959
8 C p. 257-259
3 p.
artikel
133 The electrical properties and crystal structure of IVb–VIb intermetallic-compounds Okada, Toshihiro
1959
8 C p. 428-
1 p.
artikel
134 The electrical structure of semiconductor surfaces Many, A.
1959
8 C p. 87-96
10 p.
artikel
135 The infrared Faraday effect due to free carriers in indium antimonide Moss, T.S.
1959
8 C p. 323-326
4 p.
artikel
136 The magnetic susceptibility of semi-conductors Bowers, R.
1959
8 C p. 206-211
6 p.
artikel
137 The magnetoresistance of electrons in InP and GaAs Glicksman, M.
1959
8 C p. 511-515
5 p.
artikel
138 The mass-action laws for free carriers and amphoteric impurities in semiconductors Rose, F.W.G.
1959
8 C p. 377-379
3 p.
artikel
139 The mobility, diffusion constant, and lifetime of minority carriers in heavily dislocated germanium Gibson, A.F.
1959
8 C p. 147-149
3 p.
artikel
140 The mobility of electrons heated by microwave fields in n-type germanium Morgan, T.N.
1959
8 C p. 245-249
5 p.
artikel
141 The optical absorption edge in ionic crystals Martienssen, W.
1959
8 C p. 294-296
3 p.
artikel
142 Theory of fine structure on the absorption edge in semiconductors Elliott, R.J.
1959
8 C p. 382-388
7 p.
artikel
143 Theory of infrared absorption by conduction electrons in germanium Meyer, H.J.G.
1959
8 C p. 264-269
6 p.
artikel
144 Theory of thermoelectric and thermomagnetic effects in nonpolar isotropic semiconductors Appel, J.
1959
8 C p. 353-358
6 p.
artikel
145 Theory of the zeeman effect in the photo-ionization of impurities Wallis, R.F.
1959
8 C p. 318-320
3 p.
artikel
146 Thermal conductivity in semiconductors Krumhansl, J.A.
1959
8 C p. 343-345
3 p.
artikel
147 Thermal conductivity of germanium in the temperature range 300°–1080°K Abeles, B.
1959
8 C p. 340-343
4 p.
artikel
148 Thermal resistance due to isotopes and other point defects Klemens, P.G.
1959
8 C p. 345-347
3 p.
artikel
149 The scattering mechanism of carriers on phonon and lattice defects Stilbans, L.
1959
8 C p. 123-124
2 p.
artikel
150 The semi-empirical approach to band structure Kane, Evan O.
1959
8 C p. 38-44
7 p.
artikel
151 The vibration spectra of disordered lattices Dome, C.
1959
8 C p. 419-421
3 p.
artikel
152 Transport Herring, C.
1959
8 C p. 543-549
7 p.
artikel
153 Transport phenomena in semiconductors for warped energy surfaces Tauber, G.E.
1959
8 C p. 138-141
4 p.
artikel
154 Transport properties of the pseudo-binary alloy system Bi2Te3−y Se y Fuschillo, N.
1959
8 C p. 430-433
4 p.
artikel
155 Transport theory Luttinger, J.M.
1959
8 C p. 123-
1 p.
artikel
156 Trapping of photoelectrons around dislocation lines in alkali halides Kawamura, Hazimu
1959
8 C p. 161-163
3 p.
artikel
157 Trends in semiconductor research Bardeen, J.
1959
8 C p. 2-6
5 p.
artikel
158 Work function and emission studies on clean silicon surfaces Allen, Frederick G.
1959
8 C p. 119-120
2 p.
artikel
159 Zeeman type magneto-optic studies of energy band structure Burstein, E.
1959
8 C p. 305-311
7 p.
artikel
                             159 gevonden resultaten
 
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