nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Absorption spectra of group V donors in germanium
|
Fan, H.Y. |
|
1959 |
8 |
C |
p. 270- 1 p. |
artikel |
2 |
A many-body treatment of dielectric screening for impurity states and excitons in semiconductors
|
Roth, Laura M. |
|
1959 |
8 |
C |
p. 47-49 3 p. |
artikel |
3 |
Analysis of intrinsic recombination radiation from silicon and germanium
|
Haynes, J.R. |
|
1959 |
8 |
C |
p. 392-396 5 p. |
artikel |
4 |
An analysis of mixed ambipolar and exciton diffusion in CdS crystals
|
Diemer, G. |
|
1959 |
8 |
C |
p. 182-187 6 p. |
artikel |
5 |
Anisotropy of hot electrons in germanium
|
Sasaki, W. |
|
1959 |
8 |
C |
p. 250-256 7 p. |
artikel |
6 |
A review of recent work on diamond
|
Mitchell, E.W.J. |
|
1959 |
8 |
C |
p. 444-449 6 p. |
artikel |
7 |
Auger effect in semiconductors
|
Landsberg, P.T. |
|
1959 |
8 |
C |
p. 73-75 3 p. |
artikel |
8 |
Band structure and transport properties of single-crystal graphite
|
Soule, D.E. |
|
1959 |
8 |
C |
p. 29-35 7 p. |
artikel |
9 |
Band structure calculations of semi-conductors by the Kohn-Rostoker-Korringa method: Application to germanium
|
Segall, B. |
|
1959 |
8 |
C |
p. 371-374 4 p. |
artikel |
10 |
Band theory
|
Slater, J.C. |
|
1959 |
8 |
C |
p. 21-25 5 p. |
artikel |
11 |
Binding and semiconductor properties of A III B V compounds
|
Folberth, O.G. |
|
1959 |
8 |
C |
p. 14-20 7 p. |
artikel |
12 |
Calculation of electronic energy bands in Zns
|
Birman, Joseph L. |
|
1959 |
8 |
C |
p. 35-37 3 p. |
artikel |
13 |
Capture diameter of dislocations in low-angle grain boundaries in germanium
|
Mueller, Rolf K. |
|
1959 |
8 |
C |
p. 157-161 5 p. |
artikel |
14 |
Carrier recombination in germanium as a function of temperature between 100°K and 550°K
|
Goldstein, S. |
|
1959 |
8 |
C |
p. 78-80 3 p. |
artikel |
15 |
Centres de recombinaison introduits dans le germanium par des electrons de 2 MeV
|
Baruch, P. |
|
1959 |
8 |
C |
p. 153-157 5 p. |
artikel |
16 |
Chemical shift of donor states in germanium
|
Weinreich, Gabriel |
|
1959 |
8 |
C |
p. 216-218 3 p. |
artikel |
17 |
Cohesive energies and band structures of covalence and ionic crystals
|
Morita, A. |
|
1959 |
8 |
C |
p. 363-366 4 p. |
artikel |
18 |
Concerning the problem of exciton diffusion in photoconductors
|
Broser, I. |
|
1959 |
8 |
C |
p. 177-179 3 p. |
artikel |
19 |
Conducting states in organic molecular crystals
|
Fox, David |
|
1959 |
8 |
C |
p. 439-441 3 p. |
artikel |
20 |
Cross modulation of d.c. resistance by microwave cyclotron resonance
|
Zeiger, H.J. |
|
1959 |
8 |
C |
p. 496-498 3 p. |
artikel |
21 |
Cyclotron resonance in cadmium sulfide
|
Dexter, R.N. |
|
1959 |
8 |
C |
p. 494-495 2 p. |
artikel |
22 |
D-band and mixed-valency semiconductors
|
Zener, C. |
|
1959 |
8 |
C |
p. 26-28 3 p. |
artikel |
23 |
Deep level impurities in germanium
|
Tyler, W.W. |
|
1959 |
8 |
C |
p. 59-65 7 p. |
artikel |
24 |
Dielectric constant of germanium and silicon as a function of volume
|
Cardona, Manuel |
|
1959 |
8 |
C |
p. 204-206 3 p. |
artikel |
25 |
Discussion
|
Frederikse, H.P.R. |
|
1959 |
8 |
C |
p. 361-362 2 p. |
artikel |
26 |
Discussion
|
Statz, H. |
|
1959 |
8 |
C |
p. 121-122 2 p. |
artikel |
27 |
Discussion
|
Pearson, G.L. |
|
1959 |
8 |
C |
p. 164-165 2 p. |
artikel |
28 |
Discussion
|
Kip, A.F. |
|
1959 |
8 |
C |
p. 506- 1 p. |
artikel |
29 |
Discussion
|
Burstein, E. |
|
1959 |
8 |
C |
p. 285- 1 p. |
artikel |
30 |
Discussion
|
Kip, A.F. |
|
1959 |
8 |
C |
p. 530- 1 p. |
artikel |
31 |
Discussion
|
Herman, F. |
|
1959 |
8 |
C |
p. 379-381 3 p. |
artikel |
32 |
Discussion
|
Fan, H.Y. |
|
1959 |
8 |
C |
p. 336-337 2 p. |
artikel |
33 |
Discussion
|
Lax, B. |
|
1959 |
8 |
C |
p. 193-195 3 p. |
artikel |
34 |
Discussion
|
Keyes, R.W. |
|
1959 |
8 |
C |
p. 262-263 2 p. |
artikel |
35 |
Discussion
|
Lax, M. |
|
1959 |
8 |
C |
p. 421-422 2 p. |
artikel |
36 |
Discussion
|
Keck, P.H. |
|
1959 |
8 |
C |
p. 442-443 2 p. |
artikel |
37 |
Discussion
|
Dutton, D. |
|
1959 |
8 |
C |
p. 302- 1 p. |
artikel |
38 |
Discussion
|
Herman, F. |
|
1959 |
8 |
C |
p. 20- 1 p. |
artikel |
39 |
Discussion
|
Crawford, J.H. |
|
1959 |
8 |
C |
p. 218- 1 p. |
artikel |
40 |
Discussion
|
Dunlap, Jr., W.C. |
|
1959 |
8 |
C |
p. 484-485 2 p. |
artikel |
41 |
Discussion
|
Shockley, W. |
|
1959 |
8 |
C |
p. 13-14 2 p. |
artikel |
42 |
Discussion
|
Ehrenreich, H. |
|
1959 |
8 |
C |
p. 50-51 2 p. |
artikel |
43 |
Discussion
|
Rose, A. |
|
1959 |
8 |
C |
p. 85-96 12 p. |
artikel |
44 |
Donor wavefunctions in silicon by the ENDOR technique
|
Feher, G. |
|
1959 |
8 |
C |
p. 486- 1 p. |
artikel |
45 |
Editorial Board
|
|
|
1959 |
8 |
C |
p. CO2- 1 p. |
artikel |
46 |
Effect of annealing on the state of certain impurities in Ge
|
Lashkarev, V.E. |
|
1959 |
8 |
C |
p. 84-85 2 p. |
artikel |
47 |
Effect of electron and impurity density on the field-dependence of mobility in germanium
|
Gunn, J.B. |
|
1959 |
8 |
C |
p. 239-241 3 p. |
artikel |
48 |
Effect of the metal-to-semiconductor potential on the semiconductor surface barrier height
|
Harrick, N.J. |
|
1959 |
8 |
C |
p. 106-108 3 p. |
artikel |
49 |
Effects associated with a linear energy term in the valence band of intermetallic semiconductors
|
Stern, Frank |
|
1959 |
8 |
C |
p. 277-280 4 p. |
artikel |
50 |
Effet electromagnetophotonique dans le germanium
|
Bernard, Maurice |
|
1959 |
8 |
C |
p. 332-336 5 p. |
artikel |
51 |
Electrical properties of clean germanium surfaces
|
Barnes, G.A. |
|
1959 |
8 |
C |
p. 111-113 3 p. |
artikel |
52 |
Electronic processes at grain boundaries
|
Sosnowski, L. |
|
1959 |
8 |
C |
p. 142-146 5 p. |
artikel |
53 |
Electronic processes in the silver halides at low temperature
|
Brown, F.C. |
|
1959 |
8 |
C |
p. 300-302 3 p. |
artikel |
54 |
Electronic properties of gray tin single crystals
|
Ewald, A.W. |
|
1959 |
8 |
C |
p. 523-525 3 p. |
artikel |
55 |
Electronic properties of ZnO
|
Hutson, A.R. |
|
1959 |
8 |
C |
p. 467-472 6 p. |
artikel |
56 |
Electronic structure of an exciton in alkali halides
|
Muto, T. |
|
1959 |
8 |
C |
p. 286-289 4 p. |
artikel |
57 |
Electron impact ionization in semiconductors
|
Tauc, Jan |
|
1959 |
8 |
C |
p. 219-223 5 p. |
artikel |
58 |
Energy bands of silicon and germanium
|
Phillips, J.C. |
|
1959 |
8 |
C |
p. 369-371 3 p. |
artikel |
59 |
Energy band structure of sodium atoms in the diamond lattice
|
Bassani, Franco |
|
1959 |
8 |
C |
p. 375-377 3 p. |
artikel |
60 |
Energy transfer in semiconductors
|
Balkanski, M. |
|
1959 |
8 |
C |
p. 179-181 3 p. |
artikel |
61 |
Exciton and phonon effects in the absorption spectra of germanium and silicon
|
Macfarlane, G.G. |
|
1959 |
8 |
C |
p. 388-392 5 p. |
artikel |
62 |
Exciton-lattice interaction and a theory of the line shape of exciton absorption bands
|
Toyozawa, Y. |
|
1959 |
8 |
C |
p. 289-290 2 p. |
artikel |
63 |
Experimental studies on the thermal conductivity in semiconductors
|
Kanai, Y. |
|
1959 |
8 |
C |
p. 338-339 2 p. |
artikel |
64 |
Far infrared magneto-optic effects from impurities in germanium
|
Boyle, W.S. |
|
1959 |
8 |
C |
p. 321-323 3 p. |
artikel |
65 |
Fine structure in the Hall coefficient
|
Beer, A.C. |
|
1959 |
8 |
C |
p. 507-511 5 p. |
artikel |
66 |
Fluorescent emission ascribable to exciton annihilation in pure Cds crystals
|
Grillot, Edmond |
|
1959 |
8 |
C |
p. 187-190 4 p. |
artikel |
67 |
Fundamental transition processes
|
Polder, D. |
|
1959 |
8 |
C |
p. 536-538 3 p. |
artikel |
68 |
Galvanomagnetic effects in bismuth telluride
|
Drabble, J.R. |
|
1959 |
8 |
C |
p. 428-430 3 p. |
artikel |
69 |
Galvanomagnetic effects in n-InSb at low temperatures in strong magnetic fields
|
Haslett, J.C. |
|
1959 |
8 |
C |
p. 518-523 6 p. |
artikel |
70 |
Galvanomagnetic effects in the quantum limit
|
Argyres, Petros N. |
|
1959 |
8 |
C |
p. 124-130 7 p. |
artikel |
71 |
Germanium and silicon surfaces
|
Wolsky, Sumner P. |
|
1959 |
8 |
C |
p. 114-116 3 p. |
artikel |
72 |
Giant traps
|
Lax, Melvin |
|
1959 |
8 |
C |
p. 66-73 8 p. |
artikel |
73 |
Hall mobility of a cleaned germanium surface
|
Missman, Rolland |
|
1959 |
8 |
C |
p. 109-111 3 p. |
artikel |
74 |
High electric field effects in n-indium antimonide
|
Steele, M.C. |
|
1959 |
8 |
C |
p. 242-244 3 p. |
artikel |
75 |
Hot and warm electrons — A review
|
Koenig, S.H. |
|
1959 |
8 |
C |
p. 227-234 8 p. |
artikel |
76 |
Impurity band conduction in strong magnetic fields
|
Sladek, R.J. |
|
1959 |
8 |
C |
p. 515-518 4 p. |
artikel |
77 |
Index of authors
|
|
|
1959 |
8 |
C |
p. 551-552 2 p. |
artikel |
78 |
Infrared absorption in neutron irradiated silicon
|
Fan, H.Y. |
|
1959 |
8 |
C |
p. 272-274 3 p. |
artikel |
79 |
Infrared absorption of free carriers produced in semiconductors by photoeffect
|
Kessler, F.R. |
|
1959 |
8 |
C |
p. 275-277 3 p. |
artikel |
80 |
Infrared lattice vibration studies of polar character in compound semiconductors
|
Picus, G. |
|
1959 |
8 |
C |
p. 282-285 4 p. |
artikel |
81 |
Infrared phosphor-semiconductors
|
Garlick, G.F.J. |
|
1959 |
8 |
C |
p. 449-457 9 p. |
artikel |
82 |
Interaction of excitons with lattice vibrations
|
Goodman, B. |
|
1959 |
8 |
C |
p. 291-294 4 p. |
artikel |
83 |
Intermetallic semiconductors containing alkali metals
|
Spicer, W.E. |
|
1959 |
8 |
C |
p. 437-439 3 p. |
artikel |
84 |
Intervalence band transitions in gallium arsenide
|
Braunstein, R. |
|
1959 |
8 |
C |
p. 280-282 3 p. |
artikel |
85 |
Introduction
|
Hebb, M.H. |
|
1959 |
8 |
C |
p. 1- 1 p. |
artikel |
86 |
Lattice mobility of hot carriers
|
Conwell, E. |
|
1959 |
8 |
C |
p. 234-239 6 p. |
artikel |
87 |
Lattice vibrational spectrum of germanium
|
Herman, Frank |
|
1959 |
8 |
C |
p. 405-418 14 p. |
artikel |
88 |
Lattice vibrations of semiconductors by neutron spectrometry
|
Brockhouse, B.N. |
|
1959 |
8 |
C |
p. 400-405 6 p. |
artikel |
89 |
Low temperature impurity conduction in silicon
|
Longo, T.A. |
|
1959 |
8 |
C |
p. 259-261 3 p. |
artikel |
90 |
Magneto-surface properties of near intrinsic germanium
|
Zemel, J.N. |
|
1959 |
8 |
C |
p. 102-105 4 p. |
artikel |
91 |
Measurement of the galvanomagnetic effects in pure tellurium
|
Roth, H. |
|
1959 |
8 |
C |
p. 525-530 6 p. |
artikel |
92 |
Microwave Faraday rotation: Measurement of the conductivity tensor
|
Portis, A.M. |
|
1959 |
8 |
C |
p. 326-329 4 p. |
artikel |
93 |
Microwave Hall effect in germanium and silicon at 20 kmc/s
|
Hambleton, G.E. |
|
1959 |
8 |
C |
p. 329-332 4 p. |
artikel |
94 |
Motion of electrons and holes in semiconductors from a many-electron point of view
|
Kohn, W. |
|
1959 |
8 |
C |
p. 45-47 3 p. |
artikel |
95 |
Nuclear magnetic resonance in semiconductors
|
Kraus, Olen |
|
1959 |
8 |
C |
p. 504-506 3 p. |
artikel |
96 |
Nuclear magnetic resonance studies of doped III–V compounds
|
Rhoderick, E.H. |
|
1959 |
8 |
C |
p. 498-504 7 p. |
artikel |
97 |
On photo-ionization by fast electrons in germanium and silicon
|
Vavilov, Victor S. |
|
1959 |
8 |
C |
p. 223-226 4 p. |
artikel |
98 |
On the connection between bonds and bands in metals and semiconductors
|
Choquard, Ph. |
|
1959 |
8 |
C |
p. 366-369 4 p. |
artikel |
99 |
On the role of the short and long-range order in the electrical properties of substances
|
Regel, A.R. |
|
1959 |
8 |
C |
p. 124- 1 p. |
artikel |
100 |
On the theory of excitons in solids
|
Haken, Hermann |
|
1959 |
8 |
C |
p. 166-171 6 p. |
artikel |
101 |
On the theory of strong-field conduction
|
Price, P.J. |
|
1959 |
8 |
C |
p. 136-137 2 p. |
artikel |
102 |
Optical and magnetic surface studies on germanium
|
Bray, Ralph |
|
1959 |
8 |
C |
p. 99-102 4 p. |
artikel |
103 |
Optical investigation of semiconductors at the University of Rochester
|
Dexter, D.L. |
|
1959 |
8 |
C |
p. 473-481 9 p. |
artikel |
104 |
Optical spectrum and magneto-optical properties of excitons
|
Gross, E.F. |
|
1959 |
8 |
C |
p. 172-174 3 p. |
artikel |
105 |
Phonon-drag thermomagnetic effects in n-germanium
|
Geballe, T.H. |
|
1959 |
8 |
C |
p. 347-353 7 p. |
artikel |
106 |
Photoconductivity in crystals of silver bromide
|
Braun, E.A. |
|
1959 |
8 |
C |
p. 297-300 4 p. |
artikel |
107 |
Properties of various semiconductors
|
Joffé, A. |
|
1959 |
8 |
C |
p. 6-13 8 p. |
artikel |
108 |
Quantum magneto-absorption phenomena in semiconductors
|
Lax, B. |
|
1959 |
8 |
C |
p. 311-318 8 p. |
artikel |
109 |
Radiative recombination and lifetime in germanium
|
Brill, Patricia H. |
|
1959 |
8 |
C |
p. 75-77 3 p. |
artikel |
110 |
Recent advances in the optical and electronic properties of PbS, PbSe, PbTe and their alloys
|
Scanlon, W.W. |
|
1959 |
8 |
C |
p. 423-428 6 p. |
artikel |
111 |
Recombinaison radiative par l'intermédiaire des dislocations dans le germanium
|
Guillaume, C.Benoit ÀLa |
|
1959 |
8 |
C |
p. 150-153 4 p. |
artikel |
112 |
Recombination, trapping, and optical phenomena
|
Apker, L. |
|
1959 |
8 |
C |
p. 538-541 4 p. |
artikel |
113 |
Screening effects in polar semiconductors
|
Ehrenreich, H. |
|
1959 |
8 |
C |
p. 130-135 6 p. |
artikel |
114 |
Semiconductors of the type AIIIBVI
|
Fielding, P. |
|
1959 |
8 |
C |
p. 434-437 4 p. |
artikel |
115 |
Some characteristics of large band gap compound semiconductors
|
Prener, J.S. |
|
1959 |
8 |
C |
p. 461-464 4 p. |
artikel |
116 |
Space-charge-limited currents as a technique for the study of imperfections in pure crystals
|
Lampert, M.A. |
|
1959 |
8 |
C |
p. 464-466 3 p. |
artikel |
117 |
Spectroscopie du corps solide et spectres d'excitons
|
Nikitine, S. |
|
1959 |
8 |
C |
p. 190- 1 p. |
artikel |
118 |
Spin resonance of deep level impurities in germanium and silicon
|
Ludwig, G.W. |
|
1959 |
8 |
C |
p. 490- 1 p. |
artikel |
119 |
Spin resonance of donors in CdS
|
Lambe, John |
|
1959 |
8 |
C |
p. 492-494 3 p. |
artikel |
120 |
State density in the valence band of silicon
|
Hagstrum, Homer D. |
|
1959 |
8 |
C |
p. 211-216 6 p. |
artikel |
121 |
Stationary states of semiconductors
|
Brooks, Harvey |
|
1959 |
8 |
C |
p. 531-536 6 p. |
artikel |
122 |
Studies on the recombination of electrons and holes in germanium
|
Kalashnikov, S.G. |
|
1959 |
8 |
C |
p. 52-59 8 p. |
artikel |
123 |
Sulfur in silicon
|
Carlson, R.O. |
|
1959 |
8 |
C |
p. 81-83 3 p. |
artikel |
124 |
Surfaces
|
Brattain, Walter H. |
|
1959 |
8 |
C |
p. 541-543 3 p. |
artikel |
125 |
Surface-structure and work-function determinations for Silicon crystals
|
Farnsworth, H.E. |
|
1959 |
8 |
C |
p. 116-118 3 p. |
artikel |
126 |
Sur les effets de transport dans l'antimoniure d'indium
|
Rodot, M. |
|
1959 |
8 |
C |
p. 358-361 4 p. |
artikel |
127 |
Temperature dependence of the optical band gap in ZnS
|
Piper, W.W. |
|
1959 |
8 |
C |
p. 457-461 5 p. |
artikel |
128 |
The absorption edge spectrum of diamond
|
Clark, C.D. |
|
1959 |
8 |
C |
p. 481-484 4 p. |
artikel |
129 |
The direct and indirect transition excitons in germanium
|
Zwerdling, S. |
|
1959 |
8 |
C |
p. 397-400 4 p. |
artikel |
130 |
The effect of pressure on the properties of germanium and silicon
|
Paul, William |
|
1959 |
8 |
C |
p. 196-204 9 p. |
artikel |
131 |
The effect of some surface treatments on the characteristics of fast states on germanium surfaces
|
Harnik, E. |
|
1959 |
8 |
C |
p. 96-99 4 p. |
artikel |
132 |
The effect of uniaxial tensile stress on impurity conduction in germanium
|
Fritzsche, H. |
|
1959 |
8 |
C |
p. 257-259 3 p. |
artikel |
133 |
The electrical properties and crystal structure of IVb–VIb intermetallic-compounds
|
Okada, Toshihiro |
|
1959 |
8 |
C |
p. 428- 1 p. |
artikel |
134 |
The electrical structure of semiconductor surfaces
|
Many, A. |
|
1959 |
8 |
C |
p. 87-96 10 p. |
artikel |
135 |
The infrared Faraday effect due to free carriers in indium antimonide
|
Moss, T.S. |
|
1959 |
8 |
C |
p. 323-326 4 p. |
artikel |
136 |
The magnetic susceptibility of semi-conductors
|
Bowers, R. |
|
1959 |
8 |
C |
p. 206-211 6 p. |
artikel |
137 |
The magnetoresistance of electrons in InP and GaAs
|
Glicksman, M. |
|
1959 |
8 |
C |
p. 511-515 5 p. |
artikel |
138 |
The mass-action laws for free carriers and amphoteric impurities in semiconductors
|
Rose, F.W.G. |
|
1959 |
8 |
C |
p. 377-379 3 p. |
artikel |
139 |
The mobility, diffusion constant, and lifetime of minority carriers in heavily dislocated germanium
|
Gibson, A.F. |
|
1959 |
8 |
C |
p. 147-149 3 p. |
artikel |
140 |
The mobility of electrons heated by microwave fields in n-type germanium
|
Morgan, T.N. |
|
1959 |
8 |
C |
p. 245-249 5 p. |
artikel |
141 |
The optical absorption edge in ionic crystals
|
Martienssen, W. |
|
1959 |
8 |
C |
p. 294-296 3 p. |
artikel |
142 |
Theory of fine structure on the absorption edge in semiconductors
|
Elliott, R.J. |
|
1959 |
8 |
C |
p. 382-388 7 p. |
artikel |
143 |
Theory of infrared absorption by conduction electrons in germanium
|
Meyer, H.J.G. |
|
1959 |
8 |
C |
p. 264-269 6 p. |
artikel |
144 |
Theory of thermoelectric and thermomagnetic effects in nonpolar isotropic semiconductors
|
Appel, J. |
|
1959 |
8 |
C |
p. 353-358 6 p. |
artikel |
145 |
Theory of the zeeman effect in the photo-ionization of impurities
|
Wallis, R.F. |
|
1959 |
8 |
C |
p. 318-320 3 p. |
artikel |
146 |
Thermal conductivity in semiconductors
|
Krumhansl, J.A. |
|
1959 |
8 |
C |
p. 343-345 3 p. |
artikel |
147 |
Thermal conductivity of germanium in the temperature range 300°–1080°K
|
Abeles, B. |
|
1959 |
8 |
C |
p. 340-343 4 p. |
artikel |
148 |
Thermal resistance due to isotopes and other point defects
|
Klemens, P.G. |
|
1959 |
8 |
C |
p. 345-347 3 p. |
artikel |
149 |
The scattering mechanism of carriers on phonon and lattice defects
|
Stilbans, L. |
|
1959 |
8 |
C |
p. 123-124 2 p. |
artikel |
150 |
The semi-empirical approach to band structure
|
Kane, Evan O. |
|
1959 |
8 |
C |
p. 38-44 7 p. |
artikel |
151 |
The vibration spectra of disordered lattices
|
Dome, C. |
|
1959 |
8 |
C |
p. 419-421 3 p. |
artikel |
152 |
Transport
|
Herring, C. |
|
1959 |
8 |
C |
p. 543-549 7 p. |
artikel |
153 |
Transport phenomena in semiconductors for warped energy surfaces
|
Tauber, G.E. |
|
1959 |
8 |
C |
p. 138-141 4 p. |
artikel |
154 |
Transport properties of the pseudo-binary alloy system Bi2Te3−y Se y
|
Fuschillo, N. |
|
1959 |
8 |
C |
p. 430-433 4 p. |
artikel |
155 |
Transport theory
|
Luttinger, J.M. |
|
1959 |
8 |
C |
p. 123- 1 p. |
artikel |
156 |
Trapping of photoelectrons around dislocation lines in alkali halides
|
Kawamura, Hazimu |
|
1959 |
8 |
C |
p. 161-163 3 p. |
artikel |
157 |
Trends in semiconductor research
|
Bardeen, J. |
|
1959 |
8 |
C |
p. 2-6 5 p. |
artikel |
158 |
Work function and emission studies on clean silicon surfaces
|
Allen, Frederick G. |
|
1959 |
8 |
C |
p. 119-120 2 p. |
artikel |
159 |
Zeeman type magneto-optic studies of energy band structure
|
Burstein, E. |
|
1959 |
8 |
C |
p. 305-311 7 p. |
artikel |