no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Ab initio investigation of potential indium and gallium free chalcopyrite compounds for photovoltaic application
|
Raulot, J.M. |
|
2005 |
66 |
11 |
p. 2019-2023 5 p. |
article |
2 |
Admittance spectroscopy of polycrystalline and epitaxially grown CuGaSe2
|
Metzner, Heinrich |
|
2005 |
66 |
11 |
p. 1940-1943 4 p. |
article |
3 |
Band-gap grading in Cu(In,Ga)Se2 solar cells
|
Gloeckler, M. |
|
2005 |
66 |
11 |
p. 1891-1894 4 p. |
article |
4 |
Bandlike and localized defect states in CuInSe2 solar cells
|
AbuShama, Jehad A.M. |
|
2005 |
66 |
11 |
p. 1855-1857 3 p. |
article |
5 |
Characterization of CuAlO2 thin film prepared by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure
|
Shy, J.H. |
|
2005 |
66 |
11 |
p. 2123-2126 4 p. |
article |
6 |
Characterization of Cu(In,Ga)Se2 thin films prepared by evaporationfrom ternary compounds
|
Yamaguchi, T. |
|
2005 |
66 |
11 |
p. 2000-2003 4 p. |
article |
7 |
Characterization of interface between CuInSe2 and In2O3
|
Malar, P. |
|
2005 |
66 |
11 |
p. 1928-1932 5 p. |
article |
8 |
Chiral optical absorption bands in []Cd1−x Mn x Ga2S4 semiconducting compound
|
Joshi, N.V. |
|
2005 |
66 |
11 |
p. 2011-2014 4 p. |
article |
9 |
Composition and morphology of partially selenized CuIn1−X Ga X Se2 thin films prepared using diethylselenide (DESe) as selenium source
|
Dhere, Neelkanth G. |
|
2005 |
66 |
11 |
p. 1876-1879 4 p. |
article |
10 |
Control of luminescence and conductivity of delafossite-type CuYO2 by substitution of rare earth cation (Eu, Tb) and/or Ca cation for Y cation
|
Tsuboi, Nozomu |
|
2005 |
66 |
11 |
p. 2134-2138 5 p. |
article |
11 |
Correlation of stability to varied CdCl2 treatment and related defects in CdS/CdTe PV devices as measured by thermal admittance spectroscopy
|
Enzenroth, R. Albert |
|
2005 |
66 |
11 |
p. 1883-1886 4 p. |
article |
12 |
Crystal structure and cation distribution in the solid solution series 2(ZnX)–CuInX2 (X=S, Se, Te)
|
Schorr, S. |
|
2005 |
66 |
11 |
p. 1961-1965 5 p. |
article |
13 |
Cu(In,Ga)Se2 thin-film solar cells with ZnS(O,OH), Zn–Cd–S(O,OH), and CdS buffer layers
|
Bhattacharya, R.N. |
|
2005 |
66 |
11 |
p. 1862-1864 3 p. |
article |
14 |
Defect properties of CuInSe2 and CuGaSe2
|
Wei, Su-Huai |
|
2005 |
66 |
11 |
p. 1994-1999 6 p. |
article |
15 |
Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime
|
Wasim, S.M. |
|
2005 |
66 |
11 |
p. 1887-1890 4 p. |
article |
16 |
Development of a comprehensive design tool for non-stoichiometric compound thin film solar cells: Calculations of the opto-electrical properties of multinary alloy and optimization of the cell performance
|
Hwang, H.L. |
|
2005 |
66 |
11 |
p. 1908-1914 7 p. |
article |
17 |
Editorial Board / Publication Information
|
|
|
2005 |
66 |
11 |
p. CO2- 1 p. |
article |
18 |
Effect of Cu deficiency on the optical properties and electronic structure of CuIn1−x Ga x Se2
|
Han, Sung-Ho |
|
2005 |
66 |
11 |
p. 1895-1898 4 p. |
article |
19 |
Effect of donor–acceptor defect pairs on the crystal structure of In and Ga rich ternary compounds of Cu–In(Ga)–Se(Te) systems
|
Wasim, S.M. |
|
2005 |
66 |
11 |
p. 1990-1993 4 p. |
article |
20 |
Effect of Mn-doping on the electrical properties of Cu2GeSe3
|
Marcano, G. |
|
2005 |
66 |
11 |
p. 2086-2089 4 p. |
article |
21 |
Electronic states of lanthanide in the ternary thiogallate CaGa2S4
|
Nomura, Shigetaka |
|
2005 |
66 |
11 |
p. 2090-2093 4 p. |
article |
22 |
Epitaxial Cu(In,Ga)S2 thin film solar cells
|
Hahn, Th. |
|
2005 |
66 |
11 |
p. 1899-1902 4 p. |
article |
23 |
Evaluation of stoichiometric rare-earth molybdate and tungstate compounds as laser materials
|
Kato, A. |
|
2005 |
66 |
11 |
p. 2079-2081 3 p. |
article |
24 |
Exciton spectra, valence band splitting, and energy band structure of CuGaXIn1−XS2 and CuGaXIn1−XSe2 crystals
|
Syrbu, N.N. |
|
2005 |
66 |
11 |
p. 1974-1977 4 p. |
article |
25 |
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
|
Chichibu, Shigefusa F. |
|
2005 |
66 |
11 |
p. 1868-1871 4 p. |
article |
26 |
First-principles calculation of defect formation energy in chalcopyrite-type CuInSe2, CuGaSe2 and CuAlSe2
|
Maeda, Tsuyoshi |
|
2005 |
66 |
11 |
p. 1924-1927 4 p. |
article |
27 |
Growth of ZnInGaS4 by normal freezing method
|
Sugiyama, Mutsumi |
|
2005 |
66 |
11 |
p. 2127-2129 3 p. |
article |
28 |
High field ESR measurements of spin gap system MCu2(PO4)2
|
Kaji, T. |
|
2005 |
66 |
11 |
p. 2068-2071 4 p. |
article |
29 |
Impurity-stabilized zinc-blende phase of wurtzite compounds
|
Dalpian, Gustavo M. |
|
2005 |
66 |
11 |
p. 2008-2010 3 p. |
article |
30 |
Influence of cation substitution on the magnetic properties of the FeCr2S4 ferrimagnet
|
Tsurkan, V. |
|
2005 |
66 |
11 |
p. 2040-2043 4 p. |
article |
31 |
In situ investigation of the formation of Cu(In,Ga)Se2 from selenised metallic precursors by X-ray diffraction—The impact of Gallium, Sodium and Selenium excess
|
Hergert, F. |
|
2005 |
66 |
11 |
p. 1903-1907 5 p. |
article |
32 |
Investigation of the solid solution series 2(MnX)–CuInX2 (X=S, Se)
|
Schorr, S. |
|
2005 |
66 |
11 |
p. 1966-1969 4 p. |
article |
33 |
Light figure studies of optical anisotropy induced by nanoscale spatial modulation in TlInS2
|
Shim, Yonggu |
|
2005 |
66 |
11 |
p. 2116-2118 3 p. |
article |
34 |
Local structure of Mn in (Ga,Mn)As probed by X-ray absorption spectroscopy
|
Bacewicz, R. |
|
2005 |
66 |
11 |
p. 2004-2007 4 p. |
article |
35 |
LO multi-phonons cooperative phenomenon in ZnSe–BeSemixed crystals
|
Tite, T. |
|
2005 |
66 |
11 |
p. 2099-2103 5 p. |
article |
36 |
Materials design for Cu-based quaternary compounds derived from chalcopyrite-rule
|
Matsushita, Hiroaki |
|
2005 |
66 |
11 |
p. 1933-1936 4 p. |
article |
37 |
MBE growth of a novel chalcopyrite-type ternary compound MnGeP2
|
Sato, K. |
|
2005 |
66 |
11 |
p. 2030-2035 6 p. |
article |
38 |
Mn1−x Fe x In2Se4: a new layered semiconductor system
|
Sagredo, V. |
|
2005 |
66 |
11 |
p. 2027-2029 3 p. |
article |
39 |
Non-stoichiometry and properties of ternary semiconductor phases of variable composition based on IV–VI compounds
|
Rogacheva, E.I. |
|
2005 |
66 |
11 |
p. 2104-2111 8 p. |
article |
40 |
Non-stoichiometry effects on electrical and luminescence properties of the layered oxysulfide (LaO)CuS
|
Takase, K. |
|
2005 |
66 |
11 |
p. 2130-2133 4 p. |
article |
41 |
On the statistical background of the correlation of the magnetic and electrical properties as well as of the creation of a spin-glass state in spinels with chromium
|
Warczewski, J. |
|
2005 |
66 |
11 |
p. 2044-2048 5 p. |
article |
42 |
Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers
|
Lu, C.R. |
|
2005 |
66 |
11 |
p. 2082-2085 4 p. |
article |
43 |
Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4
|
Kato, A. |
|
2005 |
66 |
11 |
p. 2076-2078 3 p. |
article |
44 |
Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4
|
Eifler, A. |
|
2005 |
66 |
11 |
p. 2052-2057 6 p. |
article |
45 |
Orbital fluctuations and orbital order in FeCr2S4
|
Tsurkan, V. |
|
2005 |
66 |
11 |
p. 2036-2039 4 p. |
article |
46 |
Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs
|
Pagès, O. |
|
2005 |
66 |
11 |
p. 2094-2098 5 p. |
article |
47 |
Phonon spectra of stoichiometric rare-earth compound of EuGa2S4
|
Kato, A. |
|
2005 |
66 |
11 |
p. 2072-2075 4 p. |
article |
48 |
Photoluminescence of CdGeP2 and (Cd,Mn)GeP2
|
Medvedkin, G.A. |
|
2005 |
66 |
11 |
p. 2015-2018 4 p. |
article |
49 |
Photoluminescence spectra of rare earth doped CaGa2S4 single crystals
|
Hidaka, C. |
|
2005 |
66 |
11 |
p. 2061-2064 4 p. |
article |
50 |
Photoluminescence study of ZnCdSe/ZnSe quantum dot systems
|
Lee, J.R. |
|
2005 |
66 |
11 |
p. 1920-1923 4 p. |
article |
51 |
Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra
|
Hidaka, Chiharu |
|
2005 |
66 |
11 |
p. 2058-2060 3 p. |
article |
52 |
Preparation of CuInGeSe4 thin films by selenization method using the Cu–In–Ge evaporated layer precursors
|
Matsushita, Hiroaki |
|
2005 |
66 |
11 |
p. 1937-1939 3 p. |
article |
53 |
Preparation of CuInS2 thin films by metal–organic decomposition
|
Nakamura, Shigeyuki |
|
2005 |
66 |
11 |
p. 1944-1946 3 p. |
article |
54 |
Preparation of Cu2ZnSnS4 thin films by hybrid sputtering
|
Tanaka, Tooru |
|
2005 |
66 |
11 |
p. 1978-1981 4 p. |
article |
55 |
Properties of CuIn(S x Se1−x )2 polycrystalline thin films prepared by chemical spray pyrolysis
|
Shirakata, Sho |
|
2005 |
66 |
11 |
p. 1970-1973 4 p. |
article |
56 |
Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy
|
Terasako, T. |
|
2005 |
66 |
11 |
p. 1982-1986 5 p. |
article |
57 |
Raman studies of lattice and local vibrational modes of GaInNAs prepared by molecular beam epitaxy
|
Shirakata, Sho |
|
2005 |
66 |
11 |
p. 2119-2122 4 p. |
article |
58 |
Rapid exothermic synthesis of chalcopyrite-type CuInSe2
|
Wada, Takahiro |
|
2005 |
66 |
11 |
p. 1987-1989 3 p. |
article |
59 |
Reaction kinetics of α-CuInSe2 formation from an In2Se3/CuSe bilayer precursor film
|
Kim, W.K. |
|
2005 |
66 |
11 |
p. 1915-1919 5 p. |
article |
60 |
Real-time study of phase transformations in Cu–In chalcogenide thin films using in situ Raman spectroscopy and XRD
|
Rudigier, E. |
|
2005 |
66 |
11 |
p. 1954-1960 7 p. |
article |
61 |
RECa4O(BO3)3 thin films as new Luminescent materials screened by the combinatorial method
|
Sano, Hiroyuki |
|
2005 |
66 |
11 |
p. 2112-2115 4 p. |
article |
62 |
Reflectivity measurements of superionic conductors for Li ion secondary battery materials
|
Ishikawa, Hirofumi |
|
2005 |
66 |
11 |
p. 2065-2067 3 p. |
article |
63 |
Spectroscopic analysis of CIGS2/CdS thin film solar cell heterojunctions on stainless steel foil
|
Dhere, N.G. |
|
2005 |
66 |
11 |
p. 1872-1875 4 p. |
article |
64 |
Spin glass like behavior in Cd0.42Mn0.58In2S4
|
Sagredo, V. |
|
2005 |
66 |
11 |
p. 2024-2026 3 p. |
article |
65 |
Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method
|
Akaki, Y. |
|
2005 |
66 |
11 |
p. 1858-1861 4 p. |
article |
66 |
Study of deep photoluminescence levels in CuInS2 crystals
|
Onishi, T. |
|
2005 |
66 |
11 |
p. 1947-1949 3 p. |
article |
67 |
Synthesis of homogeneous pentenary chalcopyrite alloys with a classical two-step growth process
|
Dhlamini, F.D |
|
2005 |
66 |
11 |
p. 1880-1882 3 p. |
article |
68 |
Temperature dependence of the photoluminescence spectra in AgGaS2
|
Ricci, P.C. |
|
2005 |
66 |
11 |
p. 1950-1953 4 p. |
article |
69 |
Temperature dependence of the Urbach energy in ordered defect compounds Cu-III3-VI5 and Cu-III5-VI8
|
Bonalde, Ismardo |
|
2005 |
66 |
11 |
p. 1865-1867 3 p. |
article |
70 |
The crystal structure of Fe2In2Se5, a FeIn2Se4-related polytype
|
Cedeño, C. |
|
2005 |
66 |
11 |
p. 2049-2051 3 p. |
article |
71 |
The 14th International Conference on Ternary and Multinary Compounds
|
Kazmerski, Larry |
|
2005 |
66 |
11 |
p. 1853- 1 p. |
article |