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                             71 results found
no title author magazine year volume issue page(s) type
1 Ab initio investigation of potential indium and gallium free chalcopyrite compounds for photovoltaic application Raulot, J.M.
2005
66 11 p. 2019-2023
5 p.
article
2 Admittance spectroscopy of polycrystalline and epitaxially grown CuGaSe2 Metzner, Heinrich
2005
66 11 p. 1940-1943
4 p.
article
3 Band-gap grading in Cu(In,Ga)Se2 solar cells Gloeckler, M.
2005
66 11 p. 1891-1894
4 p.
article
4 Bandlike and localized defect states in CuInSe2 solar cells AbuShama, Jehad A.M.
2005
66 11 p. 1855-1857
3 p.
article
5 Characterization of CuAlO2 thin film prepared by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure Shy, J.H.
2005
66 11 p. 2123-2126
4 p.
article
6 Characterization of Cu(In,Ga)Se2 thin films prepared by evaporationfrom ternary compounds Yamaguchi, T.
2005
66 11 p. 2000-2003
4 p.
article
7 Characterization of interface between CuInSe2 and In2O3 Malar, P.
2005
66 11 p. 1928-1932
5 p.
article
8 Chiral optical absorption bands in []Cd1−x Mn x Ga2S4 semiconducting compound Joshi, N.V.
2005
66 11 p. 2011-2014
4 p.
article
9 Composition and morphology of partially selenized CuIn1−X Ga X Se2 thin films prepared using diethylselenide (DESe) as selenium source Dhere, Neelkanth G.
2005
66 11 p. 1876-1879
4 p.
article
10 Control of luminescence and conductivity of delafossite-type CuYO2 by substitution of rare earth cation (Eu, Tb) and/or Ca cation for Y cation Tsuboi, Nozomu
2005
66 11 p. 2134-2138
5 p.
article
11 Correlation of stability to varied CdCl2 treatment and related defects in CdS/CdTe PV devices as measured by thermal admittance spectroscopy Enzenroth, R. Albert
2005
66 11 p. 1883-1886
4 p.
article
12 Crystal structure and cation distribution in the solid solution series 2(ZnX)–CuInX2 (X=S, Se, Te) Schorr, S.
2005
66 11 p. 1961-1965
5 p.
article
13 Cu(In,Ga)Se2 thin-film solar cells with ZnS(O,OH), Zn–Cd–S(O,OH), and CdS buffer layers Bhattacharya, R.N.
2005
66 11 p. 1862-1864
3 p.
article
14 Defect properties of CuInSe2 and CuGaSe2 Wei, Su-Huai
2005
66 11 p. 1994-1999
6 p.
article
15 Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime Wasim, S.M.
2005
66 11 p. 1887-1890
4 p.
article
16 Development of a comprehensive design tool for non-stoichiometric compound thin film solar cells: Calculations of the opto-electrical properties of multinary alloy and optimization of the cell performance Hwang, H.L.
2005
66 11 p. 1908-1914
7 p.
article
17 Editorial Board / Publication Information 2005
66 11 p. CO2-
1 p.
article
18 Effect of Cu deficiency on the optical properties and electronic structure of CuIn1−x Ga x Se2 Han, Sung-Ho
2005
66 11 p. 1895-1898
4 p.
article
19 Effect of donor–acceptor defect pairs on the crystal structure of In and Ga rich ternary compounds of Cu–In(Ga)–Se(Te) systems Wasim, S.M.
2005
66 11 p. 1990-1993
4 p.
article
20 Effect of Mn-doping on the electrical properties of Cu2GeSe3 Marcano, G.
2005
66 11 p. 2086-2089
4 p.
article
21 Electronic states of lanthanide in the ternary thiogallate CaGa2S4 Nomura, Shigetaka
2005
66 11 p. 2090-2093
4 p.
article
22 Epitaxial Cu(In,Ga)S2 thin film solar cells Hahn, Th.
2005
66 11 p. 1899-1902
4 p.
article
23 Evaluation of stoichiometric rare-earth molybdate and tungstate compounds as laser materials Kato, A.
2005
66 11 p. 2079-2081
3 p.
article
24 Exciton spectra, valence band splitting, and energy band structure of CuGaXIn1−XS2 and CuGaXIn1−XSe2 crystals Syrbu, N.N.
2005
66 11 p. 1974-1977
4 p.
article
25 Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods Chichibu, Shigefusa F.
2005
66 11 p. 1868-1871
4 p.
article
26 First-principles calculation of defect formation energy in chalcopyrite-type CuInSe2, CuGaSe2 and CuAlSe2 Maeda, Tsuyoshi
2005
66 11 p. 1924-1927
4 p.
article
27 Growth of ZnInGaS4 by normal freezing method Sugiyama, Mutsumi
2005
66 11 p. 2127-2129
3 p.
article
28 High field ESR measurements of spin gap system MCu2(PO4)2 Kaji, T.
2005
66 11 p. 2068-2071
4 p.
article
29 Impurity-stabilized zinc-blende phase of wurtzite compounds Dalpian, Gustavo M.
2005
66 11 p. 2008-2010
3 p.
article
30 Influence of cation substitution on the magnetic properties of the FeCr2S4 ferrimagnet Tsurkan, V.
2005
66 11 p. 2040-2043
4 p.
article
31 In situ investigation of the formation of Cu(In,Ga)Se2 from selenised metallic precursors by X-ray diffraction—The impact of Gallium, Sodium and Selenium excess Hergert, F.
2005
66 11 p. 1903-1907
5 p.
article
32 Investigation of the solid solution series 2(MnX)–CuInX2 (X=S, Se) Schorr, S.
2005
66 11 p. 1966-1969
4 p.
article
33 Light figure studies of optical anisotropy induced by nanoscale spatial modulation in TlInS2 Shim, Yonggu
2005
66 11 p. 2116-2118
3 p.
article
34 Local structure of Mn in (Ga,Mn)As probed by X-ray absorption spectroscopy Bacewicz, R.
2005
66 11 p. 2004-2007
4 p.
article
35 LO multi-phonons cooperative phenomenon in ZnSe–BeSemixed crystals Tite, T.
2005
66 11 p. 2099-2103
5 p.
article
36 Materials design for Cu-based quaternary compounds derived from chalcopyrite-rule Matsushita, Hiroaki
2005
66 11 p. 1933-1936
4 p.
article
37 MBE growth of a novel chalcopyrite-type ternary compound MnGeP2 Sato, K.
2005
66 11 p. 2030-2035
6 p.
article
38 Mn1−x Fe x In2Se4: a new layered semiconductor system Sagredo, V.
2005
66 11 p. 2027-2029
3 p.
article
39 Non-stoichiometry and properties of ternary semiconductor phases of variable composition based on IV–VI compounds Rogacheva, E.I.
2005
66 11 p. 2104-2111
8 p.
article
40 Non-stoichiometry effects on electrical and luminescence properties of the layered oxysulfide (LaO)CuS Takase, K.
2005
66 11 p. 2130-2133
4 p.
article
41 On the statistical background of the correlation of the magnetic and electrical properties as well as of the creation of a spin-glass state in spinels with chromium Warczewski, J.
2005
66 11 p. 2044-2048
5 p.
article
42 Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers Lu, C.R.
2005
66 11 p. 2082-2085
4 p.
article
43 Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4 Kato, A.
2005
66 11 p. 2076-2078
3 p.
article
44 Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4 Eifler, A.
2005
66 11 p. 2052-2057
6 p.
article
45 Orbital fluctuations and orbital order in FeCr2S4 Tsurkan, V.
2005
66 11 p. 2036-2039
4 p.
article
46 Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs Pagès, O.
2005
66 11 p. 2094-2098
5 p.
article
47 Phonon spectra of stoichiometric rare-earth compound of EuGa2S4 Kato, A.
2005
66 11 p. 2072-2075
4 p.
article
48 Photoluminescence of CdGeP2 and (Cd,Mn)GeP2 Medvedkin, G.A.
2005
66 11 p. 2015-2018
4 p.
article
49 Photoluminescence spectra of rare earth doped CaGa2S4 single crystals Hidaka, C.
2005
66 11 p. 2061-2064
4 p.
article
50 Photoluminescence study of ZnCdSe/ZnSe quantum dot systems Lee, J.R.
2005
66 11 p. 1920-1923
4 p.
article
51 Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra Hidaka, Chiharu
2005
66 11 p. 2058-2060
3 p.
article
52 Preparation of CuInGeSe4 thin films by selenization method using the Cu–In–Ge evaporated layer precursors Matsushita, Hiroaki
2005
66 11 p. 1937-1939
3 p.
article
53 Preparation of CuInS2 thin films by metal–organic decomposition Nakamura, Shigeyuki
2005
66 11 p. 1944-1946
3 p.
article
54 Preparation of Cu2ZnSnS4 thin films by hybrid sputtering Tanaka, Tooru
2005
66 11 p. 1978-1981
4 p.
article
55 Properties of CuIn(S x Se1−x )2 polycrystalline thin films prepared by chemical spray pyrolysis Shirakata, Sho
2005
66 11 p. 1970-1973
4 p.
article
56 Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy Terasako, T.
2005
66 11 p. 1982-1986
5 p.
article
57 Raman studies of lattice and local vibrational modes of GaInNAs prepared by molecular beam epitaxy Shirakata, Sho
2005
66 11 p. 2119-2122
4 p.
article
58 Rapid exothermic synthesis of chalcopyrite-type CuInSe2 Wada, Takahiro
2005
66 11 p. 1987-1989
3 p.
article
59 Reaction kinetics of α-CuInSe2 formation from an In2Se3/CuSe bilayer precursor film Kim, W.K.
2005
66 11 p. 1915-1919
5 p.
article
60 Real-time study of phase transformations in Cu–In chalcogenide thin films using in situ Raman spectroscopy and XRD Rudigier, E.
2005
66 11 p. 1954-1960
7 p.
article
61 RECa4O(BO3)3 thin films as new Luminescent materials screened by the combinatorial method Sano, Hiroyuki
2005
66 11 p. 2112-2115
4 p.
article
62 Reflectivity measurements of superionic conductors for Li ion secondary battery materials Ishikawa, Hirofumi
2005
66 11 p. 2065-2067
3 p.
article
63 Spectroscopic analysis of CIGS2/CdS thin film solar cell heterojunctions on stainless steel foil Dhere, N.G.
2005
66 11 p. 1872-1875
4 p.
article
64 Spin glass like behavior in Cd0.42Mn0.58In2S4 Sagredo, V.
2005
66 11 p. 2024-2026
3 p.
article
65 Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method Akaki, Y.
2005
66 11 p. 1858-1861
4 p.
article
66 Study of deep photoluminescence levels in CuInS2 crystals Onishi, T.
2005
66 11 p. 1947-1949
3 p.
article
67 Synthesis of homogeneous pentenary chalcopyrite alloys with a classical two-step growth process Dhlamini, F.D
2005
66 11 p. 1880-1882
3 p.
article
68 Temperature dependence of the photoluminescence spectra in AgGaS2 Ricci, P.C.
2005
66 11 p. 1950-1953
4 p.
article
69 Temperature dependence of the Urbach energy in ordered defect compounds Cu-III3-VI5 and Cu-III5-VI8 Bonalde, Ismardo
2005
66 11 p. 1865-1867
3 p.
article
70 The crystal structure of Fe2In2Se5, a FeIn2Se4-related polytype Cedeño, C.
2005
66 11 p. 2049-2051
3 p.
article
71 The 14th International Conference on Ternary and Multinary Compounds Kazmerski, Larry
2005
66 11 p. 1853-
1 p.
article
                             71 results found
 
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